Technique for Magnetic Susceptibility Determination in the High Doped Semiconductors by Electron Spin Resonance

A. G. Zabrodskii; A. I. Veinger; P. V. Semenikhin (Ioffe Institute of the Russian Academy of Sciences; Russia); S. I. Goloshchapov; St. Petersburg; T. V. Tisnek

arxiv: 1301.6026 · v1 · pith:DA5QQVGHnew · submitted 2013-01-25 · ❄️ cond-mat.str-el · cond-mat.mes-hall

Technique for Magnetic Susceptibility Determination in the High Doped Semiconductors by Electron Spin Resonance

A. I. Veinger , A. G. Zabrodskii , T. V. Tisnek , S. I. Goloshchapov , P. V. Semenikhin (Ioffe Institute of the Russian Academy of Sciences , St. Petersburg , Russia) This is my paper

classification ❄️ cond-mat.str-el cond-mat.mes-hall

keywords dopedhighmagneticsemiconductorssusceptibilityabsorptionaccountanalysis

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Method for determining the magnetic susceptibility in the high doped semiconductors is considered. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic doped germanium samples at a rather high concentration corresponding to the insulator metal phase transition.

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Technique for Magnetic Susceptibility Determination in the High Doped Semiconductors by Electron Spin Resonance

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