High-temperature thermoelectric properties of novel layered bismuth-sulfide LaO1-xFxBiS2
classification
❄️ cond-mat.supr-con
keywords
decreasedelectricalhigh-temperaturelao1-xfxbis2laobis2layeredpropertiesresistivity
read the original abstract
We have investigated the high-temperature thermoelectric properties of the layered compound LaO1-xFxBiS2. The electrical resistivity of LaOBiS2 showed an anomalous behavior; a metal-semiconductor transition was observed around 270 K. It was found that the value of the electrical resistivity decreased with F substitution. The Seebeck coefficient decreased with increasing F concentration. The highest power factor of 1.9 W/cmK2 at 480 C was obtained for LaOBiS2.
This paper has not been read by Pith yet.
discussion (0)
Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.