Strain-induced spatial and spectral isolation of quantum emitters in mono- and bi-layer WSe2

Two-dimensional transition metal dichalcogenide semiconductors are intriguing hosts for quantum light sources due to their unique opto-electronic properties. Here we report that strain gradients induced by substrate patterning result in spatially and spectrally isolated quantum emitters in mono- and bi-layer WSe2. By correlating localized excitons with localized strain-variations, we show that the quantum emitter emission energy can be red-tuned up to a remarkable ~170 meV. We probe the fine-structure, magneto-optics, and second order coherence of a strained emitter. These results raise the prospect to strain-engineer quantum emitter properties and deterministically create arrays of quantum emitters in two-dimensional semiconductors.