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Multilayer Pt/Al Based Ohmic contacts for AlGaN/GaN Heterostructures Stable up to 600oC Ambient Air

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arxiv 1509.09178 v1 pith:JJUI7TBQ submitted 2015-09-30 cond-mat.mtrl-sci

Nitin Goyal , Srujana Dusari , Jochen Bardong , Farid Medjdoub , Andreas Kenda , Alfred Binder This is my paper · ORCID
classification cond-mat.mtrl-sci
keywords fabricatedmetallizationagingalganexcellentheterostructuresmultilayerohmic
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In this paper, we present a Pt/Al multilayer stack-based ohmic contact metallization for AlGaN/GaN heterostructures. CTLM structures were fabricated to assess the electrical properties of the proposed metallization. The fabricated stack shows excellent stability after more than 100 hours of continuous aging at 600oC in air. Measured I-V characteristics of the fabricated samples show excellent linearity after the aging. The Pt/Al-based metallization shows great potential for future device and sensor applications in extreme environment conditions.

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