Site-controlled InGaN/GaN single-photon-emitting diode
classification
❄️ cond-mat.mes-hall
keywords
diodeinganquantumsingle-photon-emittingsite-controlledapproachchip-scalecontaining
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We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots, fabricated from a planar light-emitting diode structure containing a single InGaN quantum well using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.
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