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arxiv: 1609.09372 · v2 · pith:UNXDZJQ6new · submitted 2016-09-29 · ❄️ cond-mat.mes-hall

The Miniband Alignment Field-Effect Transistor: a superlattice-based steep-slope nanowire FET

classification ❄️ cond-mat.mes-hall
keywords alignmentsuperlatticestransistorballisticbehaviorcontrolledcurrent-regimedecade
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This work investigates energy filtering in nanowires, where pass and stopbands are obtained by including superlattices in the wire. When a pair of such superlattices is placed in series, each being controlled by a gate, it can act as a transistor where the (mis-)alignment of its minibands turns the device on (off). It is shown that, in the ballistic current-regime, the transition between the on and off state occurs in a narrow gate-bias range, giving rise to sub-60 mV per decade switching behavior.

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