Band Offset in (Ga,In)As/Ga(As,Sb) Heterostructures

S. Gies , M.J. Weseloh , C. Fuchs , W. Stolz , J. Hader , J.V. Moloney , S.W. Koch , W. Heimbrodt

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classification ❄️ cond-mat.mes-hall

keywords bandanalyzedheterostructurestemperaturealignmentcalculationscdotcomparison

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A series of (Ga,In)As/GaAs/Ga(As,Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the k$\cdot$p method. This theory-experiment comparison reveals an unusual, temperature dependent variation of the band alignment between the (Ga,In)As and Ga(As,Sb) quantum wells.

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Band Offset in (Ga,In)As/Ga(As,Sb) Heterostructures

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