Tunable bandgap and spin-orbit coupling by composition control of MoS₂ and MoO_(x) (X=2 and 3) compounds

We report on composition controlled MoS$_{2}$ and MoO$_{x}$ (x=2 and 3) compounds electrodeposited on Flourine dopped Tin Oxide (FTO) substrate. It was observed that the relative content has systematic electrical and optical changes for different thicknesses of layers ranging from $\approx$20 to 540 nm. Optical and electrical bandgaps reveals a tuneable behavior by controlling the relative content of compounds as well as a sharp transition from p to n-type of semiconductivity. Moreover, spin-orbit interaction of Mo 3d doublet enhances by reduction of MoO$_{3}$ content in thicker films. Our results convey path-way of applying such compounds in optoelectronics and nanoelectronics devices.