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arxiv: 1611.08395 · v1 · pith:YROQH6OLnew · submitted 2016-11-25 · ❄️ cond-mat.mes-hall

Robust topological insulator surface state in MBE grown (Bi_(1-x)Sb_x)₂Se₃

Y. Hung Liu (1) , C. Wei Chong (1) , W. Chuan Chen (2) , J. C. A. Huang (1 , 3 , 4) , C.-Maw Cheng (2) , K.-Ding Tsuei (2)
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Z. Li (5) H. Qiu (5) V.V. Marchenkov (6) ((1) Department of Physics National Cheng Kung University Tainan Taiwan. (2) National Synchrotron Radiation Research Center Hsinchu Taiwan (3) Advanced Optoelectronic Technology Center (AOTC) Taiwan. (4) Taiwan Consortium of Emergent Crystalline Materials (TCECM) Ministry of Science Technology Taipei Taiwan. (5) School of Electronic Science Applied Physics Hefei University of Technology Hefei Anhui China. (6) M.N. Miheev Institute of Metal Physics Ekaterinburg Russia)
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classification ❄️ cond-mat.mes-hall
keywords topologicalbeeninsulatorrobustsurfacesystemtransportachieved
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(Bi1-xSbx)2Se3 thin films have been prepared using molecular beam epitaxy (MBE). We demonstrate the angle-resolved photoemission spectroscopy (ARPES) and transport evidence for the existence of strong and robust topological surface states in this ternary system. Large tunability in transport properties by varying the Sb doping level has also been observed, where insulating phase could be achieved at x=0.5. Our results reveal the potential of this system for the study of tunable topological insulator and metal-insulator transition based device physics.

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