Thermal resistance of grain boundaries in silicon nanowires by nonequilibrium molecular dynamics

The thermal boundary resistance (Kapitza resistance) of (001) twist grain boundaries in silicon nanowires depends on the mismatch angle. This dependence is systematically investigated by means of nonequilibrium molecular dynamics simulations. Grain boundary systems with and without coincidence site lattice are compared. The Kapitza resistance increases with twist angle up to 40{\deg}. For larger angles, it varies only little around 1.56 $\pm$ 0.05 K m^2/GW, except for a drop by 30% near the 90{\deg} {\Sigma} 1 grain boundary. Finite size effects due to the fixed outer boundary conditions of the nanowire are negligible for diameters larger than 25 nm.