Two-dimensional material based "field-effect CCD"

Charge-coupled device (CCD), along with the complementary metal-oxide-semiconductor (CMOS), is one of the major imaging technologies. Traditional CCDs rely on the charge transfer between potential wells, which gives them advantages of simple pixel structure, high sensitivity, and low noise. However, the serial transfer requires fabrication incompatible with CMOS, and leads to slower, more complex, and less flexible readout than random access. Here, we report a new-concept CCD called field-effect CCD (FE-CCD), which is based on the capacitive "coupling" between the semiconductor substrate and the 2D material. The strong field effect of the 2D material enables amplification, and non-destructive readout of the integrated charges in one pixel without transfer. We demonstrated the broadband response of our CCD (up to 1870 nm) and the successful integration of 2D hetero-structures for reducing the power consumption. The demonstrated FE-CCD provides a valuable strategy for versatile 2D materials to be monolithically integrated into the semiconductor imaging technology.