THz Transient Photoconductivity of the III-V Dilute Nitride GaPAsN

(2) City University of Hong Kong; (3) University of California Berkeley; (4) University of California San Diego; (5) Lawrence Berkeley National Laboratory); C. W. Tu (4); E. M. Weiss (1); J. N. Heyman (1); J. R. Rollag (1); K. M. Yu (2); O. D. Dubon (3)

arxiv: 1805.04043 · v1 · pith:FJKSLS63new · submitted 2018-05-10 · ❄️ cond-mat.mtrl-sci

THz Transient Photoconductivity of the III-V Dilute Nitride GaPAsN

J. N. Heyman (1) , E. M. Weiss (1) , J. R. Rollag (1) , K. M. Yu (2) , O. D. Dubon (3) , Y. J. Kuang (4) , C. W. Tu (4) , W. Walukiewicz (5) ((1) Macalester College

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(2) City University of Hong Kong (3) University of California Berkeley (4) University of California San Diego (5) Lawrence Berkeley National Laboratory)

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classification ❄️ cond-mat.mtrl-sci

keywords photoconductivitydiluteelectron-holeiii-vnitriderecombinationapplicationsbimolecular

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THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP0.49As0.47N0.036. In these measurements a femtosecond optical pump-pulse excites electron-hole pairs, and a delayed THz pulse measures the change in conductivity. We find the photoconductivity is dominated by localized carriers. The decay of photoconductivity after excitation is consistent with bimolecular electron-hole recombination with recombination constant r = 3.2E-8 +/-0.8E-8 cm3/s. We discuss the implications for applications in solar energy.

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THz Transient Photoconductivity of the III-V Dilute Nitride GaPAsN

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