In-field dependences of the critical current density J_c in GdBa₂Cu₃O_(7-d) coated conductors produced by Zr irradiation and post-annealing at low temperatures

We report the influence of 6 MeV Zr$^{4+}$ irradiation and post-irradiation annealing (200 {\deg}C) in the in-field dependences of the critical current densities J$_c$ of 1.3 $\mu$m thick GdBa$_2$Cu$_3$O$_{7-d}$ coated conductors grown by co-evaporation. Samples were irradiated with 6 MeV Zr$^{4+}$ and fluences between 2.3x10$^{11}$ cm$^{-2}$ and 3x10$^{12}$ cm$^{-2}$. The correlation between the superconducting critical temperature T$_c$ and in-field dependences of critical current densities J$_c$ has been analyzed. In addition, random disorder introduced by irradiation was reduced by thermal annealed at 200 {\deg}C. The analysis of our experimental findings indicates that the optimal irradiation (reducing random disorder by annealing) results in the suppression of the self-field J$_c$ of $\simeq$ 10 $\%$ and in-field J$_c$ enhancements nearly doubled at about 5 T. A clear correlation between T$_c$, disorder and self-field J$_c$ is observed. Additional random disorder and nanoclusters suppress systematically T$_c$ and increase the flux creep relaxation at intermediate temperatures (reducing the characteristic glassy $\mu$ value).