Electrical and optical properties of MoS₂,MoO_(x=2,3)(MoSO)/RGO heterostructure

We report on transport properties of the controllable large area MoSO/Reduced graphene oxide(RGO) heterostructures electrodeposited on FTO substrates and its comparision with theoretical calculations on MoSo/Gr. I-V characteristics of the heterostructure made by P or n-type MoSO, exhibit Schottkey behavior in the interface similar to the MoS$_{2}$/Gr ones. Theoretical calculations show significant effects of lateral layer size as well as layer number in the electronic properties. In monolayer MoS$_{2}$/Gr by increasing the lateral size the energy gap disappears and the Fermi level shifts towards valence band. In the case of bilayer MoS$_{2}$ on bilayer Gr structure, the Fermi level shift is again towards valence band but, the gap is slightly higher than the monolayer structure. We found that the experimentally obtained results for n-type MoSO/RGO results are qualitatively in agreement with theoretical calculations of the MoS$_{2}$/Gr heterostructure. These results are beneficial to understand and design the high quality and low cost MoSO/RGO based electronic, optoelectronic and energy storage devices or cocatalysts.