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Antiferromagnetic order in MnBi2Te4 films grown on Si(111) by molecular beam epitaxy

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arxiv 2111.13960 v1 pith:ZUX2ZFRJ submitted 2021-11-27 cond-mat.mtrl-sci

N. Liu , S. Schreyeck , K. M. Fijalkowski , M. Kamp , K. Brunner , C. Gould , L. W. Molenkamp This is my paper · ORCID
classification cond-mat.mtrl-sci
keywords filmsmnbi2te4antiferromagneticordergrownmagneticanalyzedbeam
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MnBi2Te4 has recently been predicted and shown to be a magnetic topological insulator with intrinsic antiferromagnetic order. However, it remains a challenge to grow stoichiometric MnBi2Te4 films by molecular beam epitaxy (MBE) and to observe pure antiferromagnetic order by magnetometry. We report on a detailed study of MnBi2Te4 films grown on Si(111) by MBE with elemental sources. Films of about 100 nm thickness are analyzed in stoichiometric, structural, magnetic and magnetotransport properties with high accuracy. High-quality MnBi2Te4 films with nearly perfect septuple-layer structure are realized and structural defects typical for epitaxial van-der-Waals layers are analyzed. The films reveal antiferromagnetic order with a Neel temperature of 19 K, a spin-flop transition at a magnetic field of 2.5 T and a resistivity of 1.6 mOhm cm. These values are comparable to that of bulk MnBi2Te4 crystals. Our results provide an important basis for realizing and identifying single-phase MnBi2Te4 films with antiferromagnetic order grown by MBE.

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