Pith. sign in

REVIEW

Photovoltaic-ferroelectric materials for the realization of all-optical devices

Not yet reviewed by Pith; the record is open.

This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.

SPECIMEN: schema-true, not a live event

T0 review · schema-true

One-sentence machine reading of the paper's core claim.

pith:XXXXXXXX · record.json · timestamp

arxiv 2203.06515 v1 pith:EO4EX2GP submitted 2022-03-12 physics.optics cond-mat.mtrl-scicond-mat.other

classification physics.opticscond-mat.mtrl-scicond-mat.other
keywords opticaltransistorall-opticalcomputingeffectfieldopticallyrealization
verification ladder T0 review T1 audit T2 compute T3 formal
0 comments
read the original abstract

Following how the electrical transistor revolutionized the field of electronics,the realization of an optical transistor in which the flow of light is controlled optically should open the long-sought era of optical computing and new data processing possibilities. However, such function requires photons to influence each other, an effect which is unnatural in free space. Here it is shown that a ferroelectric and photovoltaic crystal gated optically at the onset of its bandgap energy can act as a photonic transistor. The light-induced charge generation and distribution processes alter the internal electric field and therefore impact the optical transmission with a memory effect and pronounced nonlinearity. The latter results in an optical computing possibility, which does not need to operate coherently. These findings advance efficient room temperature optical transistors, memristors, modulators and all-optical logic circuits.

Discussion (0). Continue with ORCID to comment.

Pith tools