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K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering

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arxiv 2207.06629 v1 pith:Q75NNMNM submitted 2022-07-14 cond-mat.supr-con

Dongyi Qin , Kazumasa Iida , Zimeng Guo , Chao Wang , Hikaru Saito , Satoshi Hata , Michio Naito , Akiyasu Yamamoto This is my paper · ORCID
classification cond-mat.supr-con
keywords ba122k-dopedepitaxialfilmtextboundarybuffercritical
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abstract

Molecular beam epitaxy of K-doped Ba122 (Ba$_{1-x}$K$_x$Fe$_\text{2}$As$_\text{2}$) superconductor was realized on a MgO substrate. Microstructural observation revealed that the undoped Ba122 served as a perfect buffer layer for epitaxial growth of the K-doped Ba122. The film exhibited a high critical temperature of 39.8 K and a high critical current density of 3.9 MA/cm$^\text{2}$ at 4 K. The successful growth of epitaxial thin film will enable artificial single grain boundary on oxide bicrystal substrates and reveal the grain boundary transport nature of K-doped Ba122.

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