Gap labeling theorem for multilayer thin film heterostructures

Quasiperiodic systems show a universal gap structure due to quasiperiodicity which is analogous to gap openings at the Brillouin zone boundary in periodic systems. The integrated density of states (IDoS) below those energy gaps are characterized by a few integers, which is known as the ``gap labeling theorem'' (GLT) for quasiperiodic systems. In this study, focusing on multilayer thin film systems such as twisted bilayer graphene and stacked transition metal dichalcogenides, we extend the GLT for multilayer systems of arbitrary dimensions and number of layers, using an approach based on the algebra called ``a noncommutative torus''. We find that the energy gaps and the associated IDoS are generally characterized by $_{DN}C_D$ integer labels in $N$ layer systems in the $D$ dimensions, when the effect of the interlayer coupling can be approximated by a quasiperiodic intralayer coupling for each layer. We demonstrate that the generalized GLT holds for quasiperiodic 1D tight binding models by numerical simulations.