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arxiv: 2211.12448 · v1 · pith:SR7THLYB · submitted 2022-11-22 · cond-mat.mtrl-sci · cond-mat.other

Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl

Ali Habiboglu , Yash Chandak , Pravin Khanal , Bowei Zhou , Carter Eckel , Jacob Cutshall Kennedy Warrilow , John O'Brien , John R. Schaibley
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Brian J. Leroy Wei-Gang Wang
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classification cond-mat.mtrl-sci cond-mat.other
keywords magnetoresistanceco2fealjunctionsborondopingheuslerimpactmagnetic
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Heusler alloys based magnetic tunnel junctions can potentially provide high magnetoresistance, small damping and fast switching. Here junctions with Co2FeAl as a ferromagnetic electrode are fabricated by room temperature sputtering on Si/SiO2 substrates. The doping of Boron in Co2FeAl is found to have a large positive impact on the structural, magnetic and transport properties of the junctions, with a reduced interfacial roughness and substantial improved tunneling magnetoresistance. A two-level magnetoresistance is also observed in samples annealed at low temperature, which is believed to be related to the memristive effect of the tunnel barrier with impurities.

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