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arxiv: 2501.03640 · v1 · pith:FVTNEK66 · submitted 2025-01-07 · cond-mat.mtrl-sci

Magnetic imaging under high pressure with a spin-based quantum sensor integrated in a van der Waals heterostructure

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classification cond-mat.mtrl-sci
keywords pressurewaalsmagneticundermagnetshighimagingtext
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Pressure is a powerful thermodynamic parameter for tuning the magnetic properties of van der Waals magnets owing to their weak interlayer bonding. However, local magnetometry measurements under high pressure still remain elusive for this important class of emerging materials. Here we introduce a method enabling in situ magnetic imaging of van der Waals magnets under high pressure with sub-micron spatial resolution. Our approach relies on a quantum sensing platform based on boron-vacancy (V$_\text{B}^-$) centers in hexagonal boron nitride (hBN), which can be placed in atomic contact of any type of two-dimensional (2D) material within a van der Waals heterostructure. We first show that the V$_\text{B}^-$ center can be used as a magnetic field sensor up to pressures of a few GPa, a pressure range for which the properties of a wide variety of van der Waals magnets are efficiently altered. We then use V$_\text{B}^-$ centers in a thin hBN layer to perform magnetic imaging of a van der Waals magnet under pressure. As a proof of concept, we study the pressure-dependent magnetization in micrometer-sized flakes of $1T$-CrTe$_2$, whose evolution is explained by a shift of the Curie temperature. Besides providing a new path for studying pressure-induced phase transitions in van der Waals magnets, this work also opens up interesting perspectives for exploring the physics of 2D superconductors under pressure via local measurements of the Meissner effect.

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Cited by 1 Pith paper

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score.

  1. Direct Measurement of the Singlet Lifetime and Photoexcitation Behavior of the Boron Vacancy Center in Hexagonal Boron Nitride

    quant-ph 2025-04 unverdicted novelty 6.0

    Direct PL measurement yields 15(3) ns singlet lifetime for V_B^- in hBN plus extracted transition rates from 9-level model fit to polarized dynamics.