Pith. sign in

REVIEW 4 major objections 4 minor 50 references

Escape-Induced Temporally Correlated Noise Driven Universality Crossover

T0 review · 4 major / 4 minor · reviewed 2026-08-04 · deepseek-v4-flash

Pith's one-line read During tin film growth on a doped manganese bismuth telluride substrate, a sharp crossover at 5.4 minutes moves the growing interface from conserved KPZ scaling to a regime governed by temporally correlated noise, with adatom escape identif

desk verdict Experimental crossover from cKPZ to TCN-KPZ is plausible and worth refereeing; the MD 'microscopic origin' is imposed by a substrate switch and should not be accepted as is. read the letter →

arxiv 2510.12593 v1 pith:MZKXEEJ6 submitted 2025-10-14 cond-mat.mtrl-sci

classification cond-mat.mtrl-sci MSC 82C2482C31 PACS 68.55.-a81.15.Aa05.40.-a
keywords kineticrougheningKPZuniversalitytemporallycorrelatednoiseconservedthinfilmgrowthscanningtunnelingmicroscopymoleculardynamicsadatomescape
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

The paper reports the first experimental realization of a universality crossover during thin-film growth, from the conserved Kardar–Parisi–Zhang (cKPZ) class to the temporally correlated noise KPZ (TCN-KPZ) class. Scanning tunneling microscopy of tin deposited on antimony-doped MnBi2Te4 shows that early growth forms two-dimensional islands and stanene layers with exponents matching cKPZ, while after 5.4 minutes the surface develops clustered mounds and faceted grains with exponents matching TCN-KPZ for a noise correlation exponent near 0.45. The crossover coincides with a measured drop in tin sticking, and molecular dynamics simulations show that escaping adatoms generate temporally correlated noise. If correct, this establishes that temporal noise correlations can fundamentally alter the scaling class of a growing interface, linking atomistic desorption to emergent universal behavior.

What carries the argument

The key object is the interface-height scaling analysis: the local roughness exponent α_loc, growth exponent β, and dynamic exponent z are extracted from STM topographies via height–height correlation functions and the lateral correlation length, while the spectral roughness exponent α_s comes from the structure factor. These are compared to the Lai–Das Sarma conserved-KPZ model and to a KPZ equation with temporally correlated noise of the form ⟨ηη⟩ = 2D δ_{r,r'} |t−t'|^{2θ−1} exp(−|t−t'|²/t₀²). The microscopic mechanism is adatom escape: MD particle tracking shows all deposited atoms stick before the crossover, while afterward a fraction escape, producing the correlated noise; AES confirms

What would settle it

A direct measurement of the Sn sticking or desorption rate during growth that shows no decrease at t ≈ 5.4 min would falsify the escape-noise mechanism; alternatively, an MD simulation on a single substrate including hydrogen passivation that reproduces both scaling regimes without any particle escape would also falsify it.

Watch

Extended reading notes

Core claim

The central claim is that a growing Sn film on 30% Sb-doped MnBi2Te4 undergoes a sharp dynamical crossover at t = 5.4 min between two distinct universality classes. Early growth follows conserved KPZ scaling, with experimental exponents β1 = 0.21 ± 0.03, α_loc1 = 0.71 ± 0.03, and 1/z1 = 0.31 ± 0.07, consistent with the Lai–Das Sarma conserved KPZ model. Beyond the crossover, the exponents become β2 = 0.66 ± 0.13, α_loc2 = 0.87 ± 0.07, and 1/z2 = 0.74 ± 0.05, matching TCN-KPZ theory with θ ≈ 0.45. Auger electron spectroscopy shows a sharp reduction in Sn sticking probability at the same time, and molecular dynamics simulations with particle tracking reveal that adatom escape generates tempora

Load-bearing premise

The molecular dynamics simulation reproduces the crossover only by switching substrates partway through (from Bi2Te3 to stanene) guided by experiment; if this two-substrate model is not a faithful representation of the real system, the claim that escape-induced noise is the microscopic origin is unsupported even if the measured exponents stand.

Editorial extensions

If this is right

  • Temporal noise correlations are experimentally shown to change the universality class of an interface, closing a long-standing gap between theory and experiment.
  • Controlling sticking or desorption during growth becomes a tunable handle for selecting between layered (cKPZ) and faceted (TCN-KPZ) morphologies.
  • The measured exponents provide a benchmark for TCN-KPZ theory in (2+1) dimensions at θ ≈ 0.45.
  • The hybrid noise correlation (power law at short lags, exponential at long lags) implies that real noise sources have a finite correlation time, refining predictions for experimental systems.
  • The combined method of STM scaling, AES, and MD particle tracking can be applied to other thin-film systems to identify analogous universality crossovers.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • If escape-induced noise is generic, similar cKPZ-to-TCN-KPZ crossovers should appear in other vapor-deposited films where desorption increases with coverage or temperature; this could be tested by varying deposition rate and substrate temperature while tracking exponents.
  • The two-substrate MD protocol suggests a concrete test: a single-substrate simulation that includes residual hydrogen passivation should reproduce both regimes without a substrate switch; if it cannot, the microscopic mechanism is less secure.
  • The finite correlation time t₀ in the noise correlation implies that TCN-KPZ scaling may be universal only at intermediate timescales, with observable deviations at very long times depending on t₀.
  • The crossover coincides with full first-layer coverage, hinting that the onset of desorption is tied to a change in binding environment (from substrate-supported stanene to Sn-on-Sn), a hypothesis that could be probed by measuring desorption rates on films of different thickness.
Share X Bluesky LinkedIn Reddit HN

Signed reviews

No signed human review yet.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

4 major / 4 minor

Summary. The paper reports an STM, AES, and MD study of Sn thin-film growth on Sb-doped MnBi2Te4. It claims a sharp dynamical crossover at t=5.4 min from conserved KPZ (cKPZ) behavior, with exponents β1=0.21±0.03, α_loc1=0.71±0.03, 1/z1=0.31±0.07, to a temporally correlated noise KPZ (TCN-KPZ) regime, with β2=0.66±0.13, α_loc2=0.87±0.07, 1/z2=0.74±0.05, matching Ref. 25 with θ≈0.45. The authors further present MD simulations that, after switching from a Bi2Te3 to a stanene substrate, reproduce the two regimes and show escape-induced temporally correlated noise with θ_avg=0.48±0.01, which they identify as the microscopic origin of the crossover.

Significance. If the scaling analysis and microscopic attribution hold, this would be a notable first experimental realization of temporal noise correlations changing the universality class of a growing interface. The paper has clear strengths: atomically resolved STM over a wide time range, multiple independent observables (ω, α_loc, 1/z, α_s, AES) all changing near the same time, and a plausible MD mechanism. The experimental exponent extraction is, however, built on a single cumulative growth sequence with no replicate noise realizations, and the MD crossover is imposed by a two-substrate protocol rather than emerging from one self-contained model. The experimental scaling observations are significant, but the mechanistic conclusion as stated is stronger than the evidence supports.

major comments (4)
  1. [MD simulations, Fig. 4, Fig. S12, Methods 'Simulation details'] The central mechanistic claim — that escape-induced temporally correlated noise drives the cKPZ-to-TCN-KPZ crossover — is not independently established. The text states that 'reproducing the experimental crossover required two substrates' and 'Guided by experimental observations, we switched the substrate to stanene.' Fig. S12 shows separate early-time Sn/Bi2Te3 and late-time Sn/stanene runs, and the paper admits that a fully covered stanene layer is never achieved on Bi2Te3. Thus the late-time exponents and the escape-noise correlations (Fig. 4O,P; θ_avg=0.48) are obtained from a model chosen to reproduce the experimental outcome, not from a simulation that spontaneously crosses over. This circularity affects the 'microscopic origin' claim. The authors should either provide a single-substrate simulation that produces the crossover without external switching, or explicitly reframe the MD
  2. [Fig. 1P, Fig. 2E,G, Table 1] All experimental exponents are extracted from one cumulative growth sequence; each growth time is a single realization, and no uncertainties from independent runs or bootstrap resampling are provided. The crossover time t=5.4 min is selected from the same data and then used to group points into two regimes, so the reported fit uncertainties understate the uncertainty in the exponents and the sharpness of the crossover. Please add error estimates based on repeated measurements or bootstrapping, and test whether a two-power-law model with t_c as a free parameter is preferred over a single power law (e.g., via F-test, AIC, or chi-square comparison).
  3. [AES data, Fig. 2J] The interpretation of the AES Sn/Te intensity-ratio slope change as a reduction in sticking probability is not unique. The same time range also shows a morphological transition from 2D islands to high-aspect-ratio mounds and faceted grains. A decreasing Sn/Te ratio can arise from geometric attenuation and shadowing of Auger electrons by 3D features, or from changes in escape depth, independent of any change in sticking or desorption. Without a quantitative transport model, angle-resolved AES, or another control separating coverage from morphology, the AES results do not provide independent support for the escape mechanism.
  4. [Fig. 3F,G, structure-factor collapse] The structure-factor collapse is obtained with exponents that differ from those extracted by direct fits: the early regime uses 1/z1=0.36, α1=0.58 versus measured 1/z1=0.31±0.07, α1=0.68±0.18; the late regime uses 1/z2=0.75, α2=0.88 with an extra ad hoc effective time offset t′=1.2 min. This additional parameter and the discrepancy from the directly measured exponents weaken the claim of universality collapse. Please justify the offset and the exponent choices, or perform a data-driven collapse that does not introduce free parameters beyond the measured exponents.
minor comments (4)
  1. [General] Typos and language: 'surface to vaccum' in the roughness definition; 'satisfies the the condition' in the spectral scaling section; 'Normalished ACF' in Fig. S7 caption.
  2. [Table 1] The TCN-KPZ model row is missing the α_loc value; including it would allow a direct comparison with the experimental and simulated α_loc2 values.
  3. [Methods (Simulation details)] The mapping of MD deposition flux ('one atom per ten MD steps') to the experimental 0.83 ML/min is not derived; please state the assumptions used in the timescale conversion.
  4. [Fig. S8 and local slope exponent] The claim λ1=0 is based on only a few early-time points and a fit with large scatter; the conclusion that the early regime is the Lai–Das Sarma model rather than the Das Sarma–Tamborenea model would benefit from a more detailed analysis of the local slope evolution.

Circularity Check

1 steps flagged · score 6.0 of 10

The MD support for escape-induced noise is partially circular: the late-time TCN-KPZ regime is produced by switching substrates at the experimentally observed crossover, so the simulation's 'reproduction' and fitted θ are consistency checks on a tuned protocol rather than an independent derivation.

  1. fitted input called prediction [Main text, 'To probe the universality crossover...' paragraph before Fig. 4; Fig. 4J-P; SM 'Simulation details']
    "However, continued growth on this substrate beyond t=7.8 min leads to a deviation of the critical exponents that define the universality class. ... Notably, in simulations on Bi2Te3, a fully covered stanene layer is never achieved. Guided by experimental observations, we switched the substrate to stanene, and subsequent growth reproduces the experimentally measured exponents with remarkable consistency."

    The late-time TCN-KPZ behavior is not obtained from the same self-contained model as the early regime. Because growth on Bi2Te3 alone deviates after 7.8 min, the authors switch to a stanene substrate at the experimentally inferred crossover time, i.e., the simulation's key structural input is chosen to reproduce the experimental outcome. The subsequent 'reproduction' of the late-time exponents and the escape-induced noise correlations fitted with θ_avg = 0.48 are therefore consistency checks on a tuned protocol, not an independent microscopic derivation. The experimental exponents stand, but the claim that MD 'reveals' escape as the microscopic origin is partly built in by the substrate switch.

full rationale

The experimental core of the paper is not circular: the STM-derived roughness, height-height correlation, correlation length, and structure-factor exponents are measured independently, and their comparison with cKPZ (Ref. 14) and TCN-KPZ (Ref. 25) predictions is a legitimate external test. Reference 25 is not authored by the present group, so this is not a self-citation chain. The main circularity concern is the MD mechanistic claim. The paper explicitly states that reproducing the crossover required two substrates and that, when Bi2Te3 failed beyond t = 7.8 min, the authors switched to stanene 'guided by experimental observations.' The late-time TCN-KPZ exponents and the escape-noise correlation function measured in that post-switch simulation are therefore not predictions from a single unconstrained model; the model was adjusted to match the very transition it is invoked to explain. The AES Sn/Te slope change is consistent with reduced sticking but is indirect and could also be affected by island/facet geometry, so it does not independently close the gap. Thus the experimental universality crossover is well supported, but the paper's central mechanistic claim—escape-induced temporally correlated noise as the origin—depends substantially on a tuned simulation and is partially circular. Score 6 reflects this partial circularity in the microscopic-origin claim, while acknowledging that the raw experimental scaling results are not circular.

Assumptions & free parameters 7 free parameters · 7 assumptions · 1 invented entities

Most of the paper's conclusions rest on literature exponents, the single-valued-height scaling formalism, and an ad hoc two-substrate MD protocol. The free parameters are the crossover time, the substrate-switch time, the fitted noise-correlation exponent and decay time, and the collapse-optimized exponents. No new particles or forces are introduced; the invented entity is the escape-induced noise mechanism itself, which has no independent external handle.

free parameters (7)
  • crossover growth time t_c = 5.4 min
    Chosen from the apparent break in ω(t), α_loc(t), and ξ(t) data; all regime splits and data collapses use this value.
  • MD substrate-switch time = ≈5.4 min (between Bi2Te3 and stanene slabs)
    The simulation switches substrate at the experimentally observed crossover; this imposes the transition rather than letting it emerge.
  • MD noise correlation exponent θ_avg = 0.48 ± 0.01
    Fitted from the escape-noise correlation function in Fig. 4O-P; then used to support the θ≈0.45 TCN-KPZ assignment.
  • MD noise decay time t0 = Not stated numerically
    Introduced in the noise correlation model ⟨ηη⟩=2D δ |t-t'|^{2θ-1} exp(-|t-t'|^2/t0^2); fitted to simulation data.
  • Effective growth-time offset t' for late-stage collapse = 1.2 min
    Chosen to obtain 'most consistent collapse' of the structure factor in the TCN-KPZ regime (Ref 44).
  • Data-collapse exponents for structure factor = 1/z1=0.36, α1=0.58; 1/z2=0.75, α2=0.88
    Selected to achieve best collapse (Fig. 3F-G); reported as close to measured exponents.
  • MD deposition flux = one atom per 10 MD steps (mapped to ≈0.83 ML/min)
    Simulation parameter chosen to mimic the experimental deposition rate; not derived from the theory.
assumptions (7)
  • domain assumption The theoretical exponents for the LD (cKPZ) class and TCN-KPZ class at θ≈0.45, taken from Refs 14 and 25, correctly describe (2+1)-dimensional growth.
    The entire class assignment rests on these literature exponents; if they are scheme-dependent or not the true asymptotic exponents, the identification fails.
  • domain assumption The Sn/MBST interface can be described by a single-valued height function h(r,t) with the standard kinetic-roughening scaling relations H~r^{2α_loc}, ξ~t^{1/z}, S~k^{-(2α_s+2)}.
    Used for all exponent extraction and data collapse; faceted surfaces can show anomalous scaling where these simple relations require additional exponents.
  • domain assumption A universal Lennard-Jones potential (Elliott-Akerson) captures the essential growth kinetics of Sn on Bi2Te3/stanene.
    The paper itself notes the potential 'does not include directional bonding, charge transfer, or spin-orbit effects'; the MD conclusions assume these are irrelevant to the universality crossover.
  • ad hoc to paper The noise correlation model ⟨ηη⟩=2D δ_{r,r'} |t-t'|^{2θ-1} exp(-|t-t'|^2/t0^2) describes the effective noise in the growth equation.
    Introduced to fit the MD escape-noise data; the pure power-law TCN-KPZ theory does not include the exponential cutoff.
  • domain assumption Simulation on Bi2Te3 and stanene slabs can stand in for the experimental Sb-doped MnBi2Te4 substrate.
    No empirical potentials exist for Mn/Sb dopants; Bi2Te3 is used as an analog, and the late-time regime is simulated on an idealized stanene layer rather than the actual MBST surface.
  • ad hoc to paper Switching the MD substrate at t=5.4 min is a legitimate way to continue the same growth trajectory.
    The switch is 'guided by experimental observations' and is necessary to reproduce the late-time exponents; the two sub-simulations are not a single self-contained growth model.
  • domain assumption AES Sn/Te intensity-ratio slope is a monotonic proxy for Sn sticking probability and therefore for escape noise.
    Used to connect AES to the escape mechanism; the quantitative mapping between AES ratio slope and sticking probability is not established.
invented entities (1)
  • Escape-induced temporally correlated noise
    purpose: Proposed microscopic noise source that drives the interface from cKPZ to TCN-KPZ scaling.
    The mechanism is inferred from MD simulations that were adjusted (substrate switch) to match the observed crossover; AES is consistent but indirect; no separate experimental handle directly measures the noise correlations.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Escape-Induced Temporally Correlated Noise Driven Universality Crossover." pith.science (2026). https://pith.science/paper/MZKXEEJ6

@misc{pith2026251012593,
  author       = {Pith},
  title        = {Pith review of: Escape-Induced Temporally Correlated Noise Driven Universality Crossover},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/MZKXEEJ6}},
  note         = {Machine review of arXiv:2510.12593}
}
abstract

Universal behavior in far-from-equilibrium systems is driven by interactions between transport processes and noise structure. The Kardar-Parisi-Zhang (KPZ) framework predicts that extensions incorporating conserved currents or temporally correlated noise give rise to distinct growth morphologies and universality classes, yet direct experimental realization has remained elusive. Here, we report atomically resolved Sn thin-film growth on Sb-doped MnBi$_2$Te$_4$, revealing a sharp dynamical crossover between two fundamentally different regimes. Early stage growth follows conserved KPZ scaling, forming two-dimensional islands and stanene layers. Beyond a critical deposition time, temporally correlated noise dominates, driving the nucleation of $\alpha$ -Sn clusters, their evolution into faceted grains, and coexistence with faceted $\beta$-Sn. Molecular dynamics simulation and Auger electron spectroscopy show adatom escape as the microscopic origin of temporally correlated noise, providing a microscopic mechanism for the universality crossover. These findings establish, for the first time, that temporal noise correlations can fundamentally alter the scaling class of a growing interface, linking atomistic kinetics to emergent universal behavior.

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

50 extracted references · 1 canonical work pages

  1. [1]

    Barab ´asi, H

    A.-L. Barab ´asi, H. E. Stanley,Fractal Concepts in Surface Growth(Cambridge University Press) (1995)

  2. [2]

    S. He, G. L. Kahanda, P.-z. Wong, Roughness of wetting fluid invasion fronts in porous media. Phys. Rev. Lett.69(26), 3731 (1992)

  3. [3]

    Maunuksela,et al., Kinetic Roughening in Slow Combustion of Paper.Phys

    J. Maunuksela,et al., Kinetic Roughening in Slow Combustion of Paper.Phys. Rev. Lett.79, 1515–1518 (1997)

  4. [4]

    J. A. Bonachela, C. D. Nadell, J. B. Xavier, S. A. Levin, Universality in bacterial colonies. Journal of Statistical Physics144, 303–315 (2011)

  5. [5]

    Matsushita,et al., Interface growth and pattern formation in bacterial colonies.Physica A: Statistical Mechanics and its Applications249(1-4), 517–524 (1998)

    M. Matsushita,et al., Interface growth and pattern formation in bacterial colonies.Physica A: Statistical Mechanics and its Applications249(1-4), 517–524 (1998)

  6. [6]

    Wakita, H

    J.-i. Wakita, H. Itoh, T. Matsuyama, M. Matsushita, Self-affinity for the growing interface of bacterial colonies.Journal of the Physical Society of Japan66(1), 67–72 (1997)

  7. [7]

    Krug, Origins of scale invariance in growth processes.Advances in Physics46(2), 139–282 (1997)

    J. Krug, Origins of scale invariance in growth processes.Advances in Physics46(2), 139–282 (1997)

  8. [8]

    ´Odor,Universality in Nonequilibrium Lattice Systems(WORLD SCIENTIFIC) (2008)

    G. ´Odor,Universality in Nonequilibrium Lattice Systems(WORLD SCIENTIFIC) (2008)

Show all 50 references
  1. [9]

    U. C. T ¨auber,Critical Dynamics: A Field Theory Approach to Equilibrium and Non- Equilibrium Scaling Behavior(Cambridge University Press) (2014)

  2. [10]

    P. C. Hohenberg, B. I. Halperin, Theory of dynamic critical phenomena.Rev. Mod. Phys.49, 435–479 (1977)

  3. [11]

    K. G. Wilson, J. Kogut, The renormalization group and the𝜀expansion.Physics Reports12(2), 75–199 (1974)

  4. [12]

    J. J. Ramasco, J. M. L´opez, M. A. Rodr´ıguez, Generic Dynamic Scaling in Kinetic Roughening. Phys. Rev. Lett.84, 2199–2202 (2000). 16

  5. [13]

    Kardar, G

    M. Kardar, G. Parisi, Y.-C. Zhang, Dynamic Scaling of Growing Interfaces.Phys. Rev. Lett. 56, 889–892 (1986)

  6. [14]

    Z.-W. Lai, S. Das Sarma, Kinetic growth with surface relaxation: Continuum versus atomistic models.Phys. Rev. Lett.66, 2348–2351 (1991)

  7. [15]

    T. Sun, H. Guo, M. Grant, Dynamics of driven interfaces with a conservation law.Phys. Rev. A40, 6763–6766 (1989)

  8. [16]

    Halpin-Healy, Diverse Manifolds in Random Media.Phys

    T. Halpin-Healy, Diverse Manifolds in Random Media.Phys. Rev. Lett.62, 442–445 (1989)

  9. [17]

    Medina, T

    E. Medina, T. Hwa, M. Kardar, Y.-C. Zhang, Burgers equation with correlated noise: Renormalization-group analysis and applications to directed polymers and interface growth. Phys. Rev. A39, 3053–3075 (1989)

  10. [18]

    Meakin, R

    P. Meakin, R. Jullien, Spatially Correlated Ballistic Deposition.Europhysics Letters9(1), 71 (1989)

  11. [19]

    C.-H. Lam, L. M. Sander, D. E. Wolf, Surface growth with temporally correlated noise.Phys. Rev. A46, R6128–R6131 (1992)

  12. [20]

    Katzav, M

    E. Katzav, M. Schwartz, Kardar-Parisi-Zhang equation with temporally correlated noise: A self-consistent approach.Phys. Rev. E70, 011601 (2004)

  13. [21]

    Strack, Dynamic criticality far from equilibrium: One-loop flow of Burgers-Kardar-Parisi- Zhang systems with broken Galilean invariance.Phys

    P. Strack, Dynamic criticality far from equilibrium: One-loop flow of Burgers-Kardar-Parisi- Zhang systems with broken Galilean invariance.Phys. Rev. E91, 032131 (2015)

  14. [22]

    T. Song, H. Xia, Long-range temporal correlations in the Kardar–Parisi–Zhang growth: numer- ical simulations.Journal of Statistical Mechanics: Theory and Experiment2016(11), 113206 (2016)

  15. [23]

    Al ´es, J

    A. Al ´es, J. M. L´opez, Faceted patterns and anomalous surface roughening driven by long-range temporally correlated noise.Phys. Rev. E99, 062139 (2019)

  16. [24]

    T. Song, H. Xia, Extensive numerical simulations of surface growth with temporally correlated noise.Phys. Rev. E103, 012121 (2021). 17

  17. [25]

    T. Song, H. Xia, Kinetic roughening and nontrivial scaling in the Kardar–Parisi–Zhang growth with long-range temporal correlations.Journal of Statistical Mechanics: Theory and Experi- ment2021(7), 073203 (2021)

  18. [26]

    S. Wang, H. Xia, Emergence in kinetic roughening with long-range temporal correlations. Phys. Rev. E111, 024124 (2025)

  19. [27]

    Barman,et al., Growth of bilayer stanene on a magnetic topological insulator aided by a buffer layer.Phys

    S. Barman,et al., Growth of bilayer stanene on a magnetic topological insulator aided by a buffer layer.Phys. Rev. B110, 165407 (2024)

  20. [28]

    Xu,et al., Gapped electronic structure of epitaxial stanene on InSb(111).Phys

    C.-Z. Xu,et al., Gapped electronic structure of epitaxial stanene on InSb(111).Phys. Rev. B 97, 035122 (2018)

  21. [29]

    Cahangirov, H

    S. Cahangirov, H. Sahin, G. Le Lay, A. Rubio,Introduction to the Physics of Silicene and other 2D Materials, vol. 930 (Springer) (2016)

  22. [30]

    Zhao,et al., Coexistence of Robust Edge States and Superconductivity in Few-Layer Stanene

    C. Zhao,et al., Coexistence of Robust Edge States and Superconductivity in Few-Layer Stanene. Phys. Rev. Lett.128, 206802 (2022)

  23. [31]

    Liu,et al., Growth of𝛼-Sn on silicon by a reversed𝛽-Sn to𝛼-Sn phase transformation for quantum material integration.Communications Materials3(1), 17 (2022)

    S. Liu,et al., Growth of𝛼-Sn on silicon by a reversed𝛽-Sn to𝛼-Sn phase transformation for quantum material integration.Communications Materials3(1), 17 (2022)

  24. [32]

    Ding,et al., Multiple superconducting transitions in𝛼-Sn/𝛽-Sn mixed films grown by molecular beam epitaxy.Journal of Vacuum Science & Technology A41(2) (2023)

    Y. Ding,et al., Multiple superconducting transitions in𝛼-Sn/𝛽-Sn mixed films grown by molecular beam epitaxy.Journal of Vacuum Science & Technology A41(2) (2023)

  25. [33]

    S. A. Khan,et al., Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowires. ACS Nano17(12), 11794–11804 (2023)

  26. [34]

    Karabacak, Y.-P

    T. Karabacak, Y.-P. Zhao, G.-C. Wang, T.-M. Lu, Growth-front roughening in amorphous silicon films by sputtering.Phys. Rev. B64, 085323 (2001)

  27. [35]

    Casiraghi,et al., Dynamic Roughening of Tetrahedral Amorphous Carbon.Phys

    C. Casiraghi,et al., Dynamic Roughening of Tetrahedral Amorphous Carbon.Phys. Rev. Lett. 91, 226104 (2003)

  28. [36]

    R. A. L. Almeida, S. O. Ferreira, T. J. Oliveira, F. D. A. A. a. Reis, Universal fluctuations in the growth of semiconductor thin films.Phys. Rev. B89, 045309 (2014). 18

  29. [37]

    A. C. D¨ urr,et al., Rapid Roughening in Thin Film Growth of an Organic Semiconductor (Diindenoperylene).Phys. Rev. Lett.90, 016104 (2003)

  30. [38]

    J. T. Drotar, Y.-P. Zhao, T.-M. Lu, G.-C. Wang, Mechanisms for plasma and reactive ion etch-front roughening.Phys. Rev. B61, 3012–3021 (2000)

  31. [39]

    C ´ordoba-Torres, T

    P. C ´ordoba-Torres, T. J. Mesquita, I. N. Bastos, R. P. Nogueira, Complex Dynamics during Metal Dissolution: From Intrinsic to Faceted Anomalous Scaling.Phys. Rev. Lett.102, 055504 (2009)

  32. [40]

    Y.-P. Zhao, J. B. Fortin, G. Bonvallet, G.-C. Wang, T.-M. Lu, Kinetic Roughening in Polymer Film Growth by Vapor Deposition.Phys. Rev. Lett.85, 3229–3232 (2000)

  33. [41]

    Das Sarma, P

    S. Das Sarma, P. Tamborenea, A new universality class for kinetic growth: One-dimensional molecular-beam epitaxy.Phys. Rev. Lett.66, 325–328 (1991)

  34. [42]

    Das Sarma, P

    S. Das Sarma, P. Punyindu, Dynamic scaling in a (2+1)-dimensional limited mobility model of epitaxial growth.Phys. Rev. E55, 5361–5364 (1997)

  35. [43]

    Kinetic Roughening in Polymer Film Growth by Vapor Deposition

    P. Punyindu, S. Das Sarma, Comment on “Kinetic Roughening in Polymer Film Growth by Vapor Deposition”.Phys. Rev. Lett.86, 2696–2696 (2001)

  36. [44]

    Peverini, E

    L. Peverini, E. Ziegler, T. Bigault, I. Kozhevnikov, Dynamic scaling of roughness at the early stage of tungsten film growth.Phys. Rev. B76, 045411 (2007)

  37. [45]

    Li,et al., Anisotropic electronic structure and interfacial chemical reaction of stanene/Bi2Te3

    J. Li,et al., Anisotropic electronic structure and interfacial chemical reaction of stanene/Bi2Te3. The Journal of Physical Chemistry C124(8), 4917–4924 (2020)

  38. [46]

    Materials and methods are available as supplementary material

  39. [47]

    Shukla,et al., Versatile UHV compatible Knudsen type effusion cell.Review of scientific instruments75(11), 4467–4470 (2004)

    A. Shukla,et al., Versatile UHV compatible Knudsen type effusion cell.Review of scientific instruments75(11), 4467–4470 (2004)

  40. [48]

    Lennard-Jones, Efficient ’universal’ shifted Lennard-Jones model for all KIM API supported species developed by Elliott and Akerson (2015) v003, OpenKIM,https://doi.org/10

    J. Lennard-Jones, Efficient ’universal’ shifted Lennard-Jones model for all KIM API supported species developed by Elliott and Akerson (2015) v003, OpenKIM,https://doi.org/10. 25950/962b4967(2018), doi:10.25950/962b4967. 19

  41. [49]

    A. P. Thompson,et al., LAMMPS - a flexible simulation tool for particle-based materials modeling at the atomic, meso, and continuum scales.Comp. Phys. Comm.271, 108171 (2022)

  42. [50]

    A. Stukowski, Visualization and analysis of atomistic simulation data with OVITO-the Open Visualization Tool.MODELLING AND SIMULATION IN MATERIALS SCIENCE AND EN- GINEERING18(1) (2010), doi:{10.1088/0965-0393/18/1/015012}. Acknowledgments We thank Prof. B. N. Dev, Dr. Rajeev R...

Pith tools

Reviewed August 4, 2026 · model on record in the stance chip above.