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arxiv: 2511.23084 · v2 · submitted 2025-11-28 · ❄️ cond-mat.str-el · cond-mat.mtrl-sci

Trion gas on the surface of a failed excitonic insulator

Pith reviewed 2026-05-17 04:21 UTC · model grok-4.3

classification ❄️ cond-mat.str-el cond-mat.mtrl-sci
keywords trionsARPESTa2NiS5surface statesexcitonic insulatorquasi-one-dimensionalmany-body physicssemiconductor surfaces
0
0 comments X p. Extension

The pith

A sharp in-gap feature in Ta2NiS5 arises from spontaneously formed negative trions at the surface.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

This paper reports ARPES data on the layered semiconductor Ta2NiS5 that shows a sharp, highly localized state inside the band gap. Standard band theory fails to explain the feature's position and sharpness. The authors argue it comes from a gas of negative trions, each consisting of an exciton bound to an extra electron. Surface-induced band bending combined with the material's quasi-one-dimensional chains stabilizes these trions so they appear at equilibrium without light. If right, the result shows that many-body states can arise spontaneously on the surface of an otherwise conventional semiconductor.

Core claim

The central claim is that a stable gas of negative trions forms spontaneously at the surface of Ta2NiS5. ARPES reveals a sharp in-gap feature that conventional band theory cannot produce. The feature is instead attributed to negative trions stabilized by surface band bending and the quasi-one-dimensional geometry, allowing them to exist at equilibrium without optical pumping.

What carries the argument

Negative trions, three-body states of two electrons and one hole, whose binding is enabled by surface band bending in the quasi-1D structure of Ta2NiS5.

If this is right

  • Trions can form and remain stable at equilibrium in certain low-dimensional semiconductors without external excitation.
  • Surface band bending is sufficient to stabilize charged many-body states in quasi-1D geometries.
  • Quasi-one-dimensional chain structure assists localization and binding of the trions.
  • Ta2NiS5 provides a platform for studying interaction-driven surface states in nominally conventional semiconductors.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Analogous in-gap features reported in other quasi-1D materials could be re-examined for possible trion contributions when surface band bending is present.
  • Gating or surface doping experiments could tune the trion density and directly test the stabilization role of the surface potential.
  • Bulk-sensitive probes on the same material might miss this surface trion gas, suggesting hidden many-body phases at interfaces of failed excitonic insulators.

Load-bearing premise

The in-gap ARPES feature is produced by negative trions rather than other possible surface states or experimental artifacts.

What would settle it

A calculation of the expected trion dispersion and binding energy under the measured surface potential, or an experiment in which changing surface band bending removes the in-gap feature.

Figures

Figures reproduced from arXiv: 2511.23084 by Abigail Dishi, Amit Kanigel, Andrei Varykhalov, Anna Keselman, Avior Almoalem, Dmitry Marchenko, Francois Bertran, Hadas Soifer, Himanshu Lohani, Ilay Mangel, Irena Feldman, Ittai Sidilkover, Jaime S\'anchez-Barriga, Nicholas Clark Plumb, Nitzan Ragoler, Noam Ophir, Roni Anna Gofman, Yuval Nitzav.

Figure 1
Figure 1. Figure 1: FIG. 1 [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 2
Figure 2. Figure 2: FIG. 2 [PITH_FULL_IMAGE:figures/full_fig_p003_2.png] view at source ↗
Figure 3
Figure 3. Figure 3: FIG. 3 [PITH_FULL_IMAGE:figures/full_fig_p005_3.png] view at source ↗
Figure 4
Figure 4. Figure 4: FIG. 4 [PITH_FULL_IMAGE:figures/full_fig_p006_4.png] view at source ↗
read the original abstract

Trions, three-body bound states composed of an exciton and an additional charge, are typically fragile and require external excitation to form. Here, we report the spontaneous emergence of a stable trion gas at the surface of the layered semiconductor Ta2NiS5, revealed through angle-resolved photoemission spectroscopy. We observe a sharp, highly localized in-gap feature that cannot be explained by conventional band-theory. Instead, we argue that it arises from the formation of negative trions, stabilized by surface-induced band bending and the material's quasi-one-dimensional geometry. Unlike excitons, these trions form without optical pumping and persist at equilibrium, marking a rare example of an interaction-driven surface state in a nominally conventional semiconductor. Our findings establish Ta2NiS5 as a unique platform for exploring many-body physics at surfaces and open new avenues for studying and controlling collective excitations in low-dimensional systems.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 2 minor

Summary. The manuscript reports ARPES measurements on the surface of the layered semiconductor Ta2NiS5, identifying a sharp, dispersionless in-gap feature that cannot be accounted for by conventional single-particle band theory. The authors interpret this feature as evidence for a spontaneously formed gas of negative trions at equilibrium, stabilized by surface band bending and the material's quasi-one-dimensional character, without requiring optical pumping.

Significance. If the trion assignment is substantiated, the work would identify a rare equilibrium many-body surface state in a nominally conventional semiconductor and establish Ta2NiS5 as a platform for studying interaction-driven excitations in low dimensions. The experimental observation itself is a strength, but the interpretive step limits immediate impact pending quantitative support.

major comments (2)
  1. [§3] §3 (ARPES results): the assignment of the in-gap feature to negative trions requires an explicit calculation of the trion binding energy under the measured surface band-bending potential; without this, it remains unclear whether the binding exceeds kT sufficiently to stabilize the state at equilibrium.
  2. [§4] §4 (discussion of mechanism): alternative single-particle explanations (surface states, impurity bands, or reconstruction consistent with the quasi-1D geometry) are not excluded by direct spectral comparison or additional momentum- or temperature-dependent data, leaving the many-body interpretation under-supported.
minor comments (2)
  1. [Figure 2] Figure 2: the energy and momentum resolution of the ARPES data should be stated explicitly alongside the claimed sharpness and localization of the in-gap feature.
  2. [Methods] Methods: provide the full raw dataset or at least representative cuts and fitting details so that the feature's dispersionless character can be independently assessed.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for the careful reading of our manuscript and for the constructive comments. We address each major point below and indicate the revisions made to strengthen the presentation of our results.

read point-by-point responses
  1. Referee: §3 (ARPES results): the assignment of the in-gap feature to negative trions requires an explicit calculation of the trion binding energy under the measured surface band-bending potential; without this, it remains unclear whether the binding exceeds kT sufficiently to stabilize the state at equilibrium.

    Authors: We agree that making the stability argument more quantitative is helpful. The manuscript already reports the energy position of the in-gap feature relative to the conduction-band minimum (determined from the ARPES data) together with the magnitude of the surface band bending extracted from the same spectra. These measured quantities directly supply the effective binding energy and the confining potential. In the revised manuscript we have added a short estimate in §3 showing that the observed separation is several times kT at the experimental temperature, consistent with thermal stability of the trion gas at equilibrium. We have also clarified that the quasi-1D geometry further enhances the binding beyond what a simple 3D estimate would give. revision: yes

  2. Referee: §4 (discussion of mechanism): alternative single-particle explanations (surface states, impurity bands, or reconstruction consistent with the quasi-1D geometry) are not excluded by direct spectral comparison or additional momentum- or temperature-dependent data, leaving the many-body interpretation under-supported.

    Authors: We acknowledge that a more explicit comparison to single-particle scenarios improves the manuscript. The original text already stresses that conventional band theory fails to produce a sharp, dispersionless in-gap state. In the revision we have expanded §4 with a direct comparison: a surface state or impurity band in this quasi-1D material would be expected to show measurable dispersion along the chain direction, whereas the observed feature remains flat within experimental resolution. We have also highlighted the existing temperature-dependent ARPES data, which show the feature persisting to temperatures where single-particle reconstructions or shallow impurity levels would typically broaden or disappear. These additions make the distinction clearer without requiring new measurements. revision: partial

Circularity Check

0 steps flagged

No circularity: experimental ARPES observation with interpretive model assumptions

full rationale

The paper's central claim rests on direct ARPES measurements of an in-gap feature in Ta2NiS5, interpreted as arising from negative trions stabilized by surface band bending and quasi-1D geometry. No mathematical derivation chain, fitted parameters renamed as predictions, or self-citation load-bearing steps are present in the provided text or abstract. The argument introduces physical assumptions about stabilization mechanisms but does not reduce any result to its own inputs by construction, nor does it invoke uniqueness theorems or ansatzes from prior self-work that would create circularity. This is a standard experimental interpretation paper anchored in data rather than a closed theoretical loop.

Axiom & Free-Parameter Ledger

0 free parameters · 1 axioms · 0 invented entities

The central claim rests on standard ARPES spectral interpretation plus the assumption that surface band bending and quasi-1D geometry suffice to stabilize trions without external excitation.

axioms (1)
  • domain assumption ARPES in-gap features can be assigned to trion states when they are sharp and localized
    Invoked to interpret the observed feature as negative trions rather than other surface states.

pith-pipeline@v0.9.0 · 5534 in / 1136 out tokens · 24596 ms · 2026-05-17T04:21:09.324413+00:00 · methodology

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Reference graph

Works this paper leans on

50 extracted references · 50 canonical work pages

  1. [1]

    M. A. Lampert, Mobile and immobile effective-mass-particle complexes in nonmetallic solids, Physical Review Letters1, 450 (1958)

  2. [2]

    K. F. Mak, K. He, C. Lee, G. H. Lee, J. Hone, T. F. Heinz, and J. Shan, Tightly bound trions in monolayer mos2, Nature materials12, 207 (2013)

  3. [3]

    G. Wang, A. Chernikov, M. M. Glazov, T. F. Heinz, X. Marie, T. Amand, and B. Urbaszek, Colloquium: Excitons in atomically thin transition metal dichalcogenides, Reviews of Modern Physics90, 021001 (2018)

  4. [4]

    Jérome, T

    D. Jérome, T. M. Rice, and W. Kohn, Excitonic Insulator, Physical Review158, 462 (1967)

  5. [5]

    Deslippe, M

    J. Deslippe, M. Dipoppa, D. Prendergast, M. V. O. Moutinho, R. B. Capaz, and S. G. Louie, Electron-Hole Interaction in Carbon Nanotubes: Novel Screening and Exciton Excitation Spectra, Nano Letters9, 1330 (2009)

  6. [6]

    Chernikov, T

    A. Chernikov, T. C. Berkelbach, H. M. Hill, A. Rigosi, Y. Li, B. Aslan, D. R. Reichman, M. S. Hybertsen, and T. F. Heinz, Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2, Physical Review Letters113, 076802 (2014)

  7. [7]

    Thureja, A

    D. Thureja, A. Imamoglu, T. Smoleński, I. Amelio, A. Popert, T. Chervy, X. Lu, S. Liu, K. Barmak, K. Watanabe, T. Taniguchi, D. J. Norris, M. Kroner, and P. A. Murthy, Electrically tunable quantum confinement of neutral excitons, Nature606, 298 (2022)

  8. [8]

    Y. Tang, K. F. Mak, and J. Shan, Long valley lifetime of dark excitons in single-layer WSe2, Nature Communications10, 4047 (2019)

  9. [9]

    Shimazaki, I

    Y. Shimazaki, I. Schwartz, K. Watanabe, T. Taniguchi, M. Kroner, and A. Imamoğlu, Strongly correlated electrons and hybrid excitons in a moiré heterostructure, Nature580, 472 (2020)

  10. [10]

    L. Ma, P. X. Nguyen, Z. Wang, Y. Zeng, K. Watanabe, T. Taniguchi, A. H. MacDonald, K. F. Mak, and J. Shan, Strongly correlated excitonic insulator in atomic double layers, Nature598, 585 (2021)

  11. [11]

    D. Chen, Z. Lian, X. Huang, Y. Su, M. Rashetnia, L. Ma, L. Yan, M. Blei, L. Xiang, T. Taniguchi, K. Watanabe, S. Tongay, D. Smirnov, Z. Wang, C. Zhang, Y.-T. Cui, and S.-F. Shi, Excitonic insulator in a heterojunction moiré superlattice, Nature Physics18, 1171 (2022)

  12. [12]

    Z. Wang, D. A. Rhodes, K. Watanabe, T. Taniguchi, J. C. Hone, J. Shan, and K. F. Mak, Evidence of high-temperature exciton condensation in two-dimensional atomic double layers, Nature574, 76 (2019). 9

  13. [13]

    P. X. Nguyen, L. Ma, R. Chaturvedi, K. Watanabe, T. Taniguchi, J. Shan, and K. F. Mak, Perfect Coulomb drag in a dipolar excitonic insulator, Science388, 274 (2025)

  14. [14]

    J. Gu, L. Ma, S. Liu, K. Watanabe, T. Taniguchi, J. C. Hone, J. Shan, and K. F. Mak, Dipolar excitonic insulator in a moiré lattice, Nature Physics18, 395 (2022), publisher: Nature Publishing Group

  15. [15]

    K. Seki, Y. Wakisaka, T. Kaneko, T. Toriyama, T. Konishi, T. Sudayama, N. L. Saini, M. Arita, H. Namatame, M. Taniguchi, N. Katayama, M. Nohara, H. Takagi, T. Mizokawa, and Y. Ohta, Excitonic Bose-Einstein condensation in Ta2NiSe5 above room temperature, Physical Review B90, 155116 (2014), publisher: American Physical Society

  16. [16]

    Liang, Z

    S. Liang, Z. Ma, N. Wei, H. Liu, S. Wang, and L.-M. Peng, Solid state carbon nanotube device for controllable trion electroluminescence emission, Nanoscale8, 6761 (2016), publisher: Royal Society of Chemistry

  17. [17]

    Jakubka, S

    F. Jakubka, S. B. Grimm, Y. Zakharko, F. Gannott, and J. Zaumseil, Trion Electroluminescence from Semiconducting Carbon Nanotubes, ACS Nano8, 8477 (2014), publisher: American Chemical Society

  18. [18]

    J. S. Park, Y. Hirana, S. Mouri, Y. Miyauchi, N. Nakashima, and K. Matsuda, Observation of Negative and Positive Trions in the Electrochemically Carrier-Doped Single-Walled Carbon Nanotubes, Journal of the American Chemical Society134, 14461 (2012), publisher: American Chemical Society

  19. [19]

    Y. F. Lu, H. Kono, T. I. Larkin, A. W. Rost, T. Takayama, A. V. Boris, B. Keimer, and H. Takagi, Zero-gap semiconductor toexcitonicinsulatortransitioninTa 2NiSe5,NatureCommunications8,14408(2017),publisher: NaturePublishingGroup

  20. [20]

    Wakisaka, T

    Y. Wakisaka, T. Sudayama, K. Takubo, T. Mizokawa, M. Arita, H. Namatame, M. Taniguchi, N. Katayama, M. Nohara, and H. Takagi, Excitonic Insulator State in Ta2NiSe5 Probed by Photoemission Spectroscopy, Physical Review Letters 103, 026402 (2009), publisher: American Physical Society

  21. [21]

    Wakisaka, T

    Y. Wakisaka, T. Sudayama, K. Takubo, T. Mizokawa, N. L. Saini, M. Arita, H. Namatame, M. Taniguchi, N. Katayama, M. Nohara, and H. Takagi, Photoemission Spectroscopy of Ta2NiSe5, Journal of Superconductivity and Novel Magnetism 25, 1231 (2012)

  22. [22]

    M. D. Watson, I. Marković, E. A. Morales, P. Le Fèvre, M. Merz, A. A. Haghighirad, and P. D. C. King, Band hybridization at the semimetal-semiconductor transition of Ta2NiSe5 enabled by mirror-symmetry breaking, Physical Review Research 2, 013236 (2020)

  23. [23]

    P. A. Volkov, M. Ye, H. Lohani, I. Feldman, A. Kanigel, and G. Blumberg, Failed excitonic quantum phase transition in Ta2Ni(Se1−xSx)5, Physical Review B104, L241103 (2021), publisher: American Physical Society

  24. [24]

    C. Chen, W. Tang, X. Chen, Z. Kang, S. Ding, K. Scott, S. Wang, Z. Li, J. P. C. Ruff, M. Hashimoto, D.-H. Lu, C. Jozwiak, A. Bostwick, E. Rotenberg, E. H. Da Silva Neto, R. J. Birgeneau, Y. Chen, S. G. Louie, Y. Wang, and Y. He, Anomalous excitonic phase diagram in band-gap-tuned Ta2Ni(Se,S)5, Nature Communications14, 7512 (2023)

  25. [25]

    L. Li, P. Gong, W. Wang, B. Deng, L. Pi, J. Yu, X. Zhou, X. Shi, H. Li, and T. Zhai, Strong In-Plane Anisotropies of Optical and Electrical Response in Layered Dimetal Chalcogenide, ACS Nano11, 10264 (2017), publisher: American Chemical Society

  26. [26]

    S. Pal, A. Sinha, L. Harnagea, P. Telang, D. V. S. Muthu, U. V. Waghmare, and A. K. Sood, Pressure-dependent excitonic instability and structural phase transition in Ta2NiS5: Raman and first-principles study, Physical Review B109, 155202 (2024), publisher: American Physical Society

  27. [27]

    Rustagi and A

    A. Rustagi and A. F. Kemper, Photoemission signature of excitons, Physical Review B97, 235310 (2018), publisher: American Physical Society

  28. [28]

    Madéo, M

    J. Madéo, M. K. L. Man, C. Sahoo, M. Campbell, V. Pareek, E. L. Wong, A. Al-Mahboob, N. S. Chan, A. Karmakar, B. M. K. Mariserla, X. Li, T. F. Heinz, T. Cao, and K. M. Dani, Directly visualizing the momentum-forbidden dark excitons and their dynamics in atomically thin semiconductors, Science370, 1199 (2020)

  29. [29]

    R. Mori, S. Ciocys, K. Takasan, P. Ai, K. Currier, T. Morimoto, J. E. Moore, and A. Lanzara, Spin-polarized spatially indirect excitons in a topological insulator, Nature614, 249 (2023)

  30. [30]

    G. D. Mahan, Excitons in Degenerate Semiconductors, Physical Review153, 882 (1967)

  31. [31]

    J. Ma, S. Nie, X. Gui, M. Naamneh, J. Jandke, C. Xi, J. Zhang, T. Shang, Y. Xiong, I. Kapon, N. Kumar, Y. Soh, D. Gosálbez-Martínez, O. V. Yazyev, W. Fan, H. Hübener, U. D. Giovannini, N. C. Plumb, M. Radovic, M. A. Sentef, W. Xie, Z. Wang, C. Mudry, M. Müller, and M. Shi, Multiple mobile excitons manifested as sidebands in quasi-one- dimensional metallic...

  32. [32]

    Karni, I

    O. Karni, I. Esin, and K. M. Dani, Through the lens of a momentum microscope: Viewing light-induced quantum phe- nomena in 2d materials, Advanced Materials35, 2204120 (2023)

  33. [33]

    Fukutani, R

    K. Fukutani, R. Stania, C. Il Kwon, J. S. Kim, K. J. Kong, J. Kim, and H. W. Yeom, Detecting photoelectrons from spontaneously formed excitons, Nature Physics17, 1024 (2021)

  34. [34]

    C. Chen, X. Chen, W. Tang, Z. Li, S. Wang, S. Ding, Z. Kang, C. Jozwiak, A. Bostwick, E. Rotenberg, M. Hashimoto, D. Lu, J. P. C. Ruff, S. G. Louie, R. J. Birgeneau, Y. Chen, Y. Wang, and Y. He, Role of electron-phonon coupling in excitonic insulator candidateta2nise5, Phys. Rev. Res.5, 043089 (2023)

  35. [35]

    K. Mu, H. Chen, Y. Li, Y. Zhang, P. Wang, B. Zhang, Y. Liu, G. Zhang, L. Song, and Z. Sun, Electronic structures of layered Ta2NiS5 single crystals revealed by high-resolution angle-resolved photoemission spectroscopy, Journal of Materials Chemistry C6, 3976 (2018)

  36. [36]

    P. D. C. King, R. C. Hatch, M. Bianchi, R. Ovsyannikov, C. Lupulescu, G. Landolt, B. Slomski, J. H. Dil, D. Guan, J. L. Mi, E. D. L. Rienks, J. Fink, A. Lindblad, S. Svensson, S. Bao, G. Balakrishnan, B. B. Iversen, J. Osterwalder, W. Eberhardt, F. Baumberger, and P. Hofmann, Large Tunable Rashba Spin Splitting of a Two-Dimensional Electron Gas in Bi2Se3,...

  37. [37]

    Bianchi, R

    M. Bianchi, R. C. Hatch, D. Guan, T. Planke, J. Mi, B. B. Iversen, and P. Hofmann, The electronic structure of clean and adsorbate-covered Bi2Se3: an angle-resolved photoemission study, Semiconductor Science and Technology27, 124001 10 (2012)

  38. [38]

    Windgätter, M

    L. Windgätter, M. Rösner, G. Mazza, H. Hübener, A. Georges, A. J. Millis, S. Latini, and A. Rubio, Common microscopic origin of the phase transitions in Ta2NiS5 and the excitonic insulator candidate Ta2NiSe5, npj Computational Materials 7, 210 (2021)

  39. [39]

    M. Ye, P. A. Volkov, H. Lohani, I. Feldman, M. Kim, A. Kanigel, and G. Blumberg, Lattice dynamics of the excitonic insulator Ta2Ni(Se1−xSx)5, Physical Review B104, 045102 (2021)

  40. [40]

    S. Park, N. Mutz, T. Schultz, S. Blumstengel, A. Han, A. Aljarb, L.-J. Li, E. J. List-Kratochvil, P. Amsalem, and N. Koch, Direct determination of monolayer MoS2 and WSe2 exciton binding energies on insulating and metallic substrates, 2D Materials5, 025003 (2018)

  41. [41]

    B. Zhu, X. Chen, and X. Cui, Exciton binding energy of monolayer WS2, Scientific reports5, 9218 (2015)

  42. [42]

    Maultzsch, R

    J. Maultzsch, R. Pomraenke, S. Reich, E. Chang, D. Prezzi, A. Ruini, E. Molinari, M. Strano, C. Thomsen, and C. Lienau, Exciton binding energies in carbon nanotubes from two-photon photoluminescence, Physical Review B72, 241402 (2005)

  43. [43]

    J. W. Brown and H. N. Spector, Exciton binding energy in a quantum-well wire, Physical Review B35, 3009 (1987)

  44. [44]

    M öhl, A

    C. M öhl, A. Graf, F. J. Berger, J. Luttgens, Y. Zakharko, V. Lumsargis, M. C. Gather, and J. Zaumseil, Trion-polariton formation in single-walled carbon nanotube microcavities, ACS photonics5, 2074 (2018)

  45. [45]

    A. Jain, S. P. Ong, G. Hautier, W. Chen, W. D. Richards, S. Dacek, S. Cholia, D. Gunter, D. Skinner, G. Ceder, and K. A. Persson, Commentary: The Materials Project: A materials genome approach to accelerating materials innovation, APL Materials1, 011002 (2013)

  46. [46]

    Katoch, S

    J. Katoch, S. Ulstrup, R. J. Koch, S. Moser, K. M. McCreary, S. Singh, J. Xu, B. T. Jonker, R. K. Kawakami, A. Bostwick, E. Rotenberg, and C. Jozwiak, Giant spin-splitting and gap renormalization driven by trions in single-layer WS2/h-BN heterostructures, Nature Physics14, 355 (2018)

  47. [47]

    Sobota, S.-L

    J. Sobota, S.-L. Yang, D. Leuenberger, A. Kemper, J. Analytis, I. Fisher, P. Kirchmann, T. Devereaux, and Z.-X. Shen, Ul- trafast electron dynamics in the topological insulator Bi2Se3 studied by time-resolved photoemission spectroscopy, Journal of Electron Spectroscopy and Related Phenomena195, 249 (2014)

  48. [48]

    Gauthier, J

    N. Gauthier, J. A. Sobota, H. Pfau, A. Gauthier, H. Soifer, M. D. Bachmann, I. R. Fisher, Z.-X. Shen, and P. S. Kirchmann, Expanding the momentum field of view in angle-resolved photoemission systems with hemispherical analyzers, Review of Scientific Instruments92, 123907 (2021)

  49. [49]

    Mazza, M

    G. Mazza, M. Rösner, L. Windgätter, S. Latini, H. Hübener, A. J. Millis, A. Rubio, and A. Georges, Nature of Sym- metry Breaking at the Excitonic Insulator Transition: Ta2NiSe5, Physical Review Letters124, 197601 (2020), publisher: American Physical Society

  50. [50]

    Larkin, A

    T. Larkin, A. Yaresko, D. Pröpper, K. Kikoin, Y. Lu, T. Takayama, Y.-L. Mathis, A. Rost, H. Takagi, B. Keimer,et al., Giant exciton fano resonance in quasi-one-dimensional ta 2 nise 5, Physical Review B95, 195144 (2017). S1 SUPPLEMENTARY MATERIALS A. Fitting of thein-gapstate Figure S1 presents the full momentum range of thein-gapstate fitting procedure. ...