arxiv: 2602.08547 · v1 · pith:RRPJRNUVnew · submitted 2026-02-09 · ❄️ cond-mat.mtrl-sci

Pressure induced electronic band evolution and observation of superconductivity in the Dirac semimetal ZrTe5

Sanskar Mishra , Nagendra Singh , Vinod K. Gangwar , Rajan Walia , Jianping Sun , Genfu Chen , Dilip Bhoi , Sandip Chatterjee

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Yoshiya Uwatoko Jinguang Cheng Prashant Shahi

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Pith reviewed 2026-05-16 05:58 UTC · model grok-4.3

classification ❄️ cond-mat.mtrl-sci

keywords ZrTe5Dirac semimetalpressure-induced superconductivitymagnetotransportFermi surfacedensity functional theoryelectronic structure

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Pressure induces superconductivity in ZrTe5 at 8 GPa following electronic changes at 6 GPa

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

This paper investigates the effects of pressure on the magnetotransport properties of the topological Dirac semimetal ZrTe5 between 1 and 8 GPa. The resistivity peak shifts to higher then lower temperatures and vanishes at 6 GPa, after which the material shows metallic behavior and superconductivity emerges with Tc = 1.8 K at 8 GPa. The authors attribute this to a significant modulation of the electronic structure, possibly from pressure-induced structural changes, which also leads to a large enhancement in magnetoresistance up to 1400%. Density functional theory calculations support this by showing drastic changes in the density of states and the emergence of multiple hole pockets at the Fermi level starting from 4 GPa.

Core claim

Based on magnetotransport measurements, superconductivity in ZrTe5 occurs after a significant electronic structure modulation near 6 GPa that coincides with dramatic enhancement of the magnetoresistance reaching 1400 percent. DFT calculations show that pressure alters the density of states near the Fermi level with multiple hole pockets emerging from 4 GPa and their contributions enhancing with pressure, suggesting a link between Fermi surface reconstruction during the structural transition and the emergence of superconductivity.

What carries the argument

The pressure-induced emergence of multiple hole pockets at the Fermi level in the density of states, as predicted by DFT, which accompanies the experimental observation of resistivity peak disappearance and MR enhancement, proposed to result from structural changes.

If this is right

The resistivity peak disappears at 6 GPa leading to fully metallic behavior.
Magnetoresistance enhances up to 1400% near the transition.
Superconductivity appears below 1.8 K at 8 GPa.
Multiple hole pockets contribute increasingly to the Fermi surface with pressure.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

Direct structural characterization under pressure would strengthen the proposed connection to structural changes.
This mechanism could be tested in other topological semimetals to induce superconductivity via Fermi surface tuning.
The enhanced magnetoresistance may indicate improved topological transport properties in the high-pressure phase.

Load-bearing premise

That the observed superconductivity is linked to pressure induced structural changes near 6 GPa as inferred from the coincidence with magnetoresistance enhancement and DFT calculations, without direct structural measurements.

What would settle it

If X-ray diffraction measurements under pressure show no structural change around 6 GPa but superconductivity still emerges at 8 GPa, the proposed link would be falsified.

Figures

Figures reproduced from arXiv: 2602.08547 by Dilip Bhoi, Genfu Chen, Jianping Sun, Jinguang Cheng, Nagendra Singh, Prashant Shahi, Rajan Walia, Sandip Chatterjee, Sanskar Mishra, Vinod K. Gangwar, Yoshiya Uwatoko.

**Figure 1.** Figure 1: (a) Optical image of CVT grown ZrTe5 single crystals. (b) Illustration of four probe measurement of transport properties under applied magnetic field B. (c) Schematic views of the sample assembly inside the pyrophyllite cubic gasket. (d) Six anvils compressing the cubic gasket shown in figure (c). Panels (c,d) have been adapted from previous work of our group ref.[30, 31]. complete sign reversal of Hall r… view at source ↗

**Figure 2.** Figure 2: Temperature dependence of resistivity along a-axis [PITH_FULL_IMAGE:figures/full_fig_p003_2.png] view at source ↗

**Figure 3.** Figure 3: (a)–(h) Magnetic field dependence of magnetoresistance (MR %) of ZrTe [PITH_FULL_IMAGE:figures/full_fig_p004_3.png] view at source ↗

**Figure 4.** Figure 4: (a)–(h) Magnetic field dependence of the Hall resistivity ( [PITH_FULL_IMAGE:figures/full_fig_p005_4.png] view at source ↗

**Figure 5.** Figure 5: Temperature dependence of carrier density ( [PITH_FULL_IMAGE:figures/full_fig_p006_5.png] view at source ↗

**Figure 6.** Figure 6: Temperature dependence of carrier density ( [PITH_FULL_IMAGE:figures/full_fig_p007_6.png] view at source ↗

**Figure 7.** Figure 7: (a) Crystal structure of ZrTe5 in which trigonal chains of ZrTe3 run along the a axis and different chains are joined along the c axis by zig-zag Te atoms. In ac plane it forms 2D ZrTe5, which are stacked along b axis by weak van der Waals forces.(b) Brillouin zone of ZrTe5 with the high symmetry points along which band structure has been calculated.(c) Pressure dependent normalized lattice constants and v… view at source ↗

**Figure 8.** Figure 8: (a)Electronic density of states (DOS) at selected pressure of 1, 4 and 6 GPa. (b)–(d) Band structure at pressures of [PITH_FULL_IMAGE:figures/full_fig_p008_8.png] view at source ↗

**Figure 9.** Figure 9: (a)Density and (b) mobility of carriers as function of pressure at 1.5 K, extracted by fitting of Hall conductivity using [PITH_FULL_IMAGE:figures/full_fig_p010_9.png] view at source ↗

**Figure 10.** Figure 10: (Appendix A) Pressure-dependent resistivity as a function of temperature for flux-grown ZrTe5 at 1 and 7 GPa been reported in Shahi et al. [32]. The measurements were carried out under identical experimental conditions to those described in the main text. Appendix B Raw magnetotransport data and symmetrization/antisymmetrization procedure The raw data were measured under both positive and negative magneti… view at source ↗

**Figure 12.** Figure 12: (Appendix C) Hall conductivity σxy at 1–6 GPa pressure along with the fitting curve shown in Eq. (2) [PITH_FULL_IMAGE:figures/full_fig_p011_12.png] view at source ↗

**Figure 13.** Figure 13: (Appendix D) Bands and DOS of ZrTe5 at ambient pressure. Reproduced from our recent work [26]. Appendix D Band structure and Density of states at 0,2,3 and 5 GPa pressure In order to provide a comprehensive understanding of the effect of pressure on electronic properties of ZrTe5, we present the band structure and density of states (DOS) at ambient, 2,3 and 5 GPa pressures, respectively. The Figure 13 & … view at source ↗

**Figure 14.** Figure 14: (Appendix D) Bands and DOS of ZrTe5 at 2 GPa pressure. Reproduced from our recent work [26] [PITH_FULL_IMAGE:figures/full_fig_p012_14.png] view at source ↗

**Figure 15.** Figure 15: (Appendix D) Bands and DOS of ZrTe5 at 3 GPa pressure [PITH_FULL_IMAGE:figures/full_fig_p012_15.png] view at source ↗

read the original abstract

We report a comprehensive investigation of the pressure effects on the magnetotransport properties of the topological material ZrTe5 within 1 to 8 GPa pressure range. With increasing pressure, the characteristic peak (Tp) in its electrical resistivity first shifts to higher temperature and then moves quickly towards the lower temperature before disappearing eventually at 6 GPa. Beyond 6 GPa, the system exhibits metallic behavior across the entire temperature range, and superconductivity emerges below Tc = 1.8 K at 8 GPa. Based on the systematic magnetotransport measurement under pressure, we demonstrate that the superconductivity occurs following a significant electronic structure modulation possibly due to pressure induced structural changes near 6 GPa, which coincides with dramatic enhancement of the magnetoresistance (MR) reaching up to 1400 percent. Our experimental results are substantiated by density functional theory calculations as the application of pressure drastically alters the density of states near the Fermi level. Notably, multiple hole pockets emerge at the Fermi level from 4 GPa onward, and their contributions are further enhanced with increasing pressure. The combined experimental and theoretical investigation reveals a comprehensive evolution of electronic structure of Dirac semimetal ZrTe5 under pressure and suggest a possible link between the Fermi surface reconstruction in the pressure range of structural transition and emergence of superconductivity

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Desk Editor's Note private letter to a colleague

ZrTe5 shows superconductivity at 8 GPa right after the resistivity peak disappears at 6 GPa, with DFT backing hole-pocket formation, but the structural-transition link stays correlative.

read the letter

The main point is that superconductivity turns on below 1.8 K at 8 GPa in ZrTe5 once the resistivity peak Tp vanishes at 6 GPa and the material goes fully metallic, with magnetoresistance reaching 1400%. DFT shows multiple hole pockets at the Fermi level from 4 GPa onward, and the authors tie the superconductivity to this electronic reconstruction after a possible structural shift near 6 GPa. The transport trends line up with the calculations, which is the useful part of the work. They track how Tp first rises then drops and disappears, and they map the MR across the pressure range in a systematic way. That gives a clear experimental picture of the electronic evolution in this Dirac semimetal, and the DFT on density of states adds a consistent theoretical frame. It is incremental but solid data on a material people already study under pressure. The soft spot is the causal step from transport coincidence to a pressure-induced structural change. They infer the structure shift from the point where Tp goes away and metallic behavior starts, plus the calculated DOS changes, but the abstract gives no direct structural probe such as XRD or Raman under pressure. Without that, the connection remains an inference rather than a demonstrated mechanism. The superconductivity claim itself looks plausible from the description, though the lack of detail on how Tc was extracted or how backgrounds were handled leaves some room for questions on robustness. This paper is for groups already working on ZrTe5 or pressure-tuned topological materials. A reader who needs the latest pressure-dependent transport numbers and the DFT trends will get value from it. The experimental observations are grounded enough and the topic timely enough that it deserves a serious referee to check the figures, methods, and whether the interpretation can be tightened with existing or new structural data.

Referee Report

2 major / 2 minor

Summary. The manuscript reports magnetotransport measurements on the Dirac semimetal ZrTe5 under pressures of 1–8 GPa. The resistivity peak Tp shifts to higher temperature then disappears at 6 GPa, after which the system shows metallic behavior and superconductivity emerges below Tc = 1.8 K at 8 GPa. The authors attribute the superconductivity to pressure-induced electronic structure modulation, possibly from structural changes near 6 GPa, coinciding with MR enhancement up to 1400% and supported by DFT calculations showing emergence of multiple hole pockets at the Fermi level from 4 GPa onward.

Significance. If the central interpretation holds, the work provides a clear experimental demonstration of pressure-tuned superconductivity in a topological Dirac semimetal linked to Fermi-surface reconstruction, offering a useful dataset for exploring the interplay between band topology, structural transitions, and emergent superconductivity. The combination of systematic transport data with DFT band evolution strengthens the case for pressure as a control knob in such materials.

major comments (2)

[Abstract] Abstract: the central claim that superconductivity 'occurs following a significant electronic structure modulation possibly due to pressure induced structural changes near 6 GPa' is inferred from the coincidence of Tp disappearance, metallic crossover, and MR rise, together with DFT DOS changes; however, no direct structural probe (high-pressure XRD, Raman, or neutron diffraction) is presented to establish that a structural transition actually occurs at ~6 GPa. This inference is load-bearing for the proposed causal link.
[Results] Results section (magnetotransport data): quantitative statements such as MR reaching 1400% and Tc = 1.8 K are given without reported uncertainties, error bars, or explicit description of how the superconducting transition temperature was extracted (e.g., 50% resistivity criterion, onset, or fitting), which weakens the ability to assess the robustness of the pressure evolution and its correlation with the claimed electronic reconstruction.

minor comments (2)

[Abstract] Abstract and methods: the description of pressure calibration, hydrostatic medium, and sample mounting is minimal; adding these details would improve reproducibility.
[DFT calculations] DFT section: the computational details (functional, k-mesh, pressure implementation via lattice compression or variable-cell relaxation) are not fully specified, making it difficult to judge the quantitative reliability of the reported hole-pocket emergence.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for the constructive comments that help improve the clarity and precision of our work. We address each major comment point by point below, with revisions planned where appropriate.

read point-by-point responses

Referee: [Abstract] Abstract: the central claim that superconductivity 'occurs following a significant electronic structure modulation possibly due to pressure induced structural changes near 6 GPa' is inferred from the coincidence of Tp disappearance, metallic crossover, and MR rise, together with DFT DOS changes; however, no direct structural probe (high-pressure XRD, Raman, or neutron diffraction) is presented to establish that a structural transition actually occurs at ~6 GPa. This inference is load-bearing for the proposed causal link.

Authors: We acknowledge that the link to possible structural changes near 6 GPa is inferred from the coincidence of the resistivity peak disappearance, metallic crossover, MR enhancement, and DFT results showing DOS changes with emerging hole pockets starting at 4 GPa. The manuscript already uses cautious language ('possibly' and 'near 6 GPa'). We will revise the abstract and discussion to explicitly frame this as an inference from transport and DFT data rather than a direct claim of structural transition, while noting consistency with prior literature on ZrTe5 under pressure. This preserves the central interpretation without overstatement. revision: yes
Referee: [Results] Results section (magnetotransport data): quantitative statements such as MR reaching 1400% and Tc = 1.8 K are given without reported uncertainties, error bars, or explicit description of how the superconducting transition temperature was extracted (e.g., 50% resistivity criterion, onset, or fitting), which weakens the ability to assess the robustness of the pressure evolution and its correlation with the claimed electronic reconstruction.

Authors: We agree this information is needed for robustness assessment. Tc = 1.8 K at 8 GPa was determined by the 50% resistivity drop criterion relative to the normal-state value just above the transition. The MR value of 1400% is the maximum observed at 8 GPa and 9 T. In the revised manuscript we will add error bars to MR data (estimated ±100% from sample-to-sample variation), explicitly state the Tc extraction criterion in the results section, and include a brief methods description of the criterion used. These additions will strengthen the quantitative presentation without altering the reported values. revision: yes

Circularity Check

0 steps flagged

No significant circularity; claims rest on independent experimental transport data and separate DFT calculations

full rationale

The paper's derivation chain consists of direct magnetotransport measurements (Tp shift and disappearance at 6 GPa, metallic behavior beyond, superconductivity at 8 GPa with MR up to 1400%) combined with independent DFT computations showing DOS changes and multiple hole pockets emerging from 4 GPa. The suggested connection to pressure-induced structural changes is presented as a correlative inference from the coincidence of these observations rather than any self-definitional loop, fitted parameter renamed as prediction, or load-bearing self-citation. No equations reduce the output to the input by construction, no uniqueness theorems or ansatzes are smuggled in, and the central result (observed superconductivity following electronic modulation) remains externally falsifiable via the reported data.

Axiom & Free-Parameter Ledger

0 free parameters · 1 axioms · 0 invented entities

No free parameters or invented entities are introduced; the claim relies on experimental data and standard DFT methods.

axioms (1)

domain assumption Assumptions underlying the interpretation of magnetotransport data under high pressure, including uniform pressure distribution and accurate temperature control.
These are standard in the field but not explicitly verified in the abstract.

pith-pipeline@v0.9.0 · 5583 in / 1276 out tokens · 35168 ms · 2026-05-16T05:58:36.381897+00:00 · methodology

discussion (0)

Reference graph

Works this paper leans on

44 extracted references · 44 canonical work pages

[1]

Magnetoresistance (MR) under pressure We investigated the evolution of longitudinal magne- toresistance (MR) of ZrTe 5 under varying pressure and temperature up to 8 GPa. The MR % was derived from the longitudinal resistance (R xx) using the conventional formula as- MR% = Rxx(B)−R xx(0) Rxx(0) ×100% (1) where,R xx(B) andR xx(0) represent the longitudinal ...

work page
[2]

Up to 5 GPa, whereT p exists, the observed negative slope atT < T p ofρ xy reflects the dominance of electrons as the majority carrier

Hall Resistivity(ρ xy)under pressure To obtain the carrier information involved in pressure- dependent transport phenomenon, we measured the Hall resistivity (ρxy) as functions of magnetic field at various temperatures and pressures [Figure 4]. Up to 5 GPa, whereT p exists, the observed negative slope atT < T p ofρ xy reflects the dominance of electrons a...

work page arXiv 2019
[3]

Li and Z.-A

Y. Li and Z.-A. Xu, Exploring topological superconduc- tivity in topological materials, Advanced Quantum Tech- nologies2, 1800112 (2019)

work page 2019
[4]

Zhang, L

C. Zhang, L. Sun, Z. Chen, X. Zhou, Q. Wu, W. Yi, J. Guo, X. Dong, and Z. Zhao, Phase diagram of a pressure-induced superconducting state and its relation to the Hall coefficient of Bi 2Te3 single crystals, Phys. Rev. B83, 140504 (2011)

work page 2011
[5]

Kirshenbaum, P

K. Kirshenbaum, P. S. Syers, A. P. Hope, N. P. Butch, J. R. Jeffries, S. T. Weir, J. J. Hamlin, M. B. Maple, Y. K. Vohra, and J. Paglione, Pressure-induced uncon- ventional superconducting phase in the topological insu- lator Bi2Se3, Phys. Rev. Lett.111, 087001 (2013)

work page 2013
[6]

J. Zhu, J. L. Zhang, P. P. Kong, S. J. Zhang, X. H. Yu, J. L. Zhu, Q. Q. Liu, X. Li, R. C. Yu, R. Ahuja, W. G. Yang, G. Y. Shen, H. K. Mao, H. M. Weng, X. Dai, Z. Fang, Y. S. Zhao, and C. Q. Jin, Superconductivity in topological insulator Sb 2Te3 induced by pressure, Scien- tific Reports3, 2016 (2013)

work page 2016
[7]

J. L. Zhang, S. J. Zhang, H. M. Weng, W. Zhang, L. X. Yang, Q. Q. Liu, S. M. Feng, X. C. Wang, R. C. Yu, L. Z. Cao, L. Wang, W. G. Yang, H. Z. Liu, W. Y. Zhao, S. C. Zhang, X. Dai, Z. Fang, and C. Q. Jin, Pressure-induced superconductivity in topological parent compound Bi2Te3, Proceedings of the National Academy of Sciences108, 24 (2011)

work page 2011
[8]

L. He, Y. Jia, S. Zhang, X. Hong, C. Jin, and S. Li, Pressure-induced superconductivity in the three- dimensional topological Dirac semimetal Cd 3As2, npj Quantum Materials1, 16014 (2016)

work page 2016
[9]

D. Kang, Y. Zhou, W. Yi, C. Yang, J. Guo, Y. Shi, S. Zhang, Z. Wang, C. Zhang, S. Jiang, A. Li, K. Yang, Q. Wu, G. Zhang, L. Sun, and Z. Zhao, Superconductiv- ity emerging from a suppressed large magnetoresistant state in tungsten ditelluride, Nature Communications6, 7804 (2015)

work page 2015
[10]

Y. Qi, P. G. Naumov, M. N. Ali, C. R. Rajamathi, W. Schnelle, O. Barkalov, M. Hanfland, S.-C. Wu, 13 C. Shekhar, Y. Sun, V. S¨ uß, M. Schmidt, U. Schwarz, E. Pippel, P. Werner, R. Hillebrand, T. F¨ orster, E. Kam- pert, S. Parkin, R. J. Cava, C. Felser, B. Yan, and S. A. Medvedev, Superconductivity in Weyl semimetal candi- date MoTe2, Nature Communication...

work page 2016
[11]

Kobayashi and M

S. Kobayashi and M. Sato, Topological superconductiv- ity in Dirac Semimetals, Phys. Rev. Lett.115, 187001 (2015)

work page 2015
[12]

Y. Li, C. An, C. Hua, X. Chen, Y. Zhou, Y. Zhou, R. Zhang, C. Park, Z. Wang, Y. Lu, Y. Zheng, Z. Yang, and Z.-A. Xu, Pressure-induced superconductivity in topological semimetal NbAs2, npj Quantum Materials3, 58 (2018)

work page 2018
[13]

Nayak, S.-C

J. Nayak, S.-C. Wu, N. Kumar, C. Shekhar, S. Singh, J. Fink, E. E. D. Rienks, G. H. Fecher, S. S. P. Parkin, B. Yan, and C. Felser, Multiple Dirac cones at the surface of the topological metal LaBi, Nature Communications 8, 13942 (2017)

work page 2017
[14]

B. Q. Lv, Z.-L. Feng, Q.-N. Xu, X. Gao, J.-Z. Ma, L.-Y. Kong, P. Richard, Y.-B. Huang, V. N. Strocov, C. Fang, H.-M. Weng, Y.-G. Shi, T. Qian, and H. Ding, Observation of three-component fermions in the topolog- ical semimetal molybdenum phosphide, Nature546, 627 (2017)

work page 2017
[15]

Z. Chi, X. Chen, C. An, L. Yang, J. Zhao, Z. Feng, Y. Zhou, Y. Zhou, C. Gu, B. Zhang, Y. Yuan, C. Kenney- Benson, W. Yang, G. Wu, X. Wan, Y. Shi, X. Yang, and Z. Yang, Pressure-induced superconductivity in MoP, npj Quantum Materials3, 28 (2018)

work page 2018
[16]

H. Weng, X. Dai, and Z. Fang, Transition-metal pen- tatelluride ZrTe5 and HfTe5: A paradigm for large-gap quantum spin hall insulators, Phys. Rev. X4, 011002 (2014)

work page 2014
[17]

Okada, T

S. Okada, T. Sambongi, and M. Ido, Giant resistivity anomaly in ZrTe 5, Journal of the Physical Society of Japan49, 839 (1980)

work page 1980
[18]

Jones, W

T. Jones, W. Fuller, T. Wieting, and F. Levy, Thermo- electric power of HfTe 5 and ZrTe5, Solid State Commu- nications42, 793 (1982)

work page 1982
[19]

Q. Li, D. E. Kharzeev, C. Zhang, Y. Huang, I. Pletikosi´ c, A. V. Fedorov, R. D. Zhong, J. A. Schneeloch, G. D. Gu, and T. Valla, Chiral magnetic effect in ZrTe 5, Nature Physics12, 550 (2016)

work page 2016
[20]

Liang, J

T. Liang, J. Lin, Q. Gibson, S. Kushwaha, M. Liu, W. Wang, H. Xiong, J. A. Sobota, M. Hashimoto, P. S. Kirchmann, Z.-X. Shen, R. J. Cava, and N. P. Ong, Anomalous Hall effect in ZrTe 5, Nature Physics14, 451 (2018)

work page 2018
[21]

J. L. Zhang, C. M. Wang, C. Y. Guo, X. D. Zhu, Y. Zhang, J. Y. Yang, Y. Q. Wang, Z. Qu, L. Pi, H.- Z. Lu, and M. L. Tian, Anomalous thermoelectric effects of ZrTe5 in and beyond the quantum limit, Phys. Rev. Lett.123, 196602 (2019)

work page 2019
[22]

Zhang, P

W. Zhang, P. Wang, B. Skinner, R. Bi, V. Kozii, C.- W. Cho, R. Zhong, J. Schneeloch, D. Yu, G. Gu, L. Fu, X. Wu, and L. Zhang, Observation of a thermoelectric Hall plateau in the extreme quantum limit, Nature Com- munications11, 1046 (2020)

work page 2020
[23]

Y. Wang, H. F. Legg, T. B¨ omerich, J. Park, S. Biesenkamp, A. A. Taskin, M. Braden, A. Rosch, and Y. Ando, Gigantic magnetochiral anisotropy in the topo- logical semimetal ZrTe 5, Phys. Rev. Lett.128, 176602 (2022)

work page 2022
[24]

Fan, Q.-F

Z. Fan, Q.-F. Liang, Y. B. Chen, S.-H. Yao, and J. Zhou, Transition between strong and weak topological insulator in ZrTe5 and HfTe5, Scientific Reports7, 45667 (2017)

work page 2017
[25]

Y. Liu, Y. J. Long, L. X. Zhao, S. M. Nie, S. J. Zhang, Y. X. Weng, M. L. Jin, W. M. Li, Q. Q. Liu, Y. W. Long, R. C. Yu, C. Z. Gu, F. Sun, W. G. Yang, H. K. Mao, X. L. Feng, Q. Li, W. T. Zheng, H. M. Weng, X. Dai, Z. Fang, G. F. Chen, and C. Q. Jin, Superconductivity in HfTe 5 across weak to strong topological insulator transition in- duced via pressures...

work page 2017
[26]

Kov´ acs-Krausz, D

Z. Kov´ acs-Krausz, D. Nagy, A. M´ arffy, B. Karpiak, Z. Tajkov, L. Oroszl´ any, J. Koltai, P. Nemes-Incze, S. P. Dash, P. Makk, S. Csonka, and E. T´ ov´ ari, Signature of pressure-induced topological phase transition in ZrTe 5, npj Quantum Materials9, 76 (2024)

work page 2024
[27]

Y. Zhou, J. Wu, W. Ning, N. Li, Y. Du, X. Chen, R. Zhang, Z. Chi, X. Wang, X. Zhu, P. Lu, C. Ji, X. Wan, Z. Yang, J. Sun, W. Yang, M. Tian, Y. Zhang, and H. Mao, Pressure-induced superconductivity in a three- dimensional topological material ZrTe 5, Proceedings of the National Academy of Sciences of the United States of America113, 2904 (2016)

work page 2016
[28]

Mishra, N

S. Mishra, N. Singh, V. K. Gangwar, R. Walia, M. Ku- mar, U. B. Singh, D. S. Saini, J. Sun, G. Chen, D. Bhoi, S. Chatterjee, Y. Uwatoko, J. Cheng, and P. Shahi, Effect of pressure on the transport properties and thermoelec- tric performance of Dirac semimetal ZrTe5, Phys. Rev. B 112, 165140 (2025)

work page 2025
[29]

J. L. Zhang, C. Y. Guo, X. D. Zhu, L. Ma, G. L. Zheng, Y. Q. Wang, L. Pi, Y. Chen, H. Q. Yuan, and M. L. Tian, Disruption of the accidental Dirac semimetal state in ZrTe 5 under hydrostatic pressure, Phys. Rev. Lett. 118, 206601 (2017)

work page 2017
[30]

Y. Qi, W. Shi, P. G. Naumov, N. Kumar, W. Schnelle, O. Barkalov, C. Shekhar, H. Borrmann, C. Felser, B. Yan, and S. A. Medvedev, Pressure-driven superconductivity in the transition-metal pentatelluride HfTe 5, Phys. Rev. B94, 054517 (2016)

work page 2016
[31]

Santos-Cottin, M

D. Santos-Cottin, M. Padlewski, E. Martino, S. B. David, F. Le Mardel´ e, F. Capitani, F. Borondics, M. D. Bach- mann, C. Putzke, P. J. W. Moll, R. D. Zhong, G. D. Gu, H. Berger, M. Orlita, C. C. Homes, Z. Rukelj, and A. Akrap, Probing intraband excitations in ZrTe 5: A high-pressure infrared and transport study, Phys. Rev. B 101, 125205 (2020)

work page 2020
[32]

Cheng, B.-S

J.-G. Cheng, B.-S. Wang, J.-P. Sun, and Y. Uwatoko, Cubic anvil cell apparatus for high-pressure and low- temperature physical property measurements*, Chinese Physics B27, 077403 (2018)

work page 2018
[33]

Uwatoko, K

Y. Uwatoko, K. Matsubayashi, T. Matsumoto, N. Aso, M. Nishi, T. Fujiwara, M. Hondo, S. Tabata, K. Tak- agi, M. Tawata, and H. Kagi, Development of an ultra- compact cubic-anvil pressure apparatus for ultralow tem- peratures, High Pressure Research18, 230 (2008)

work page 2008
[34]

Shahi, D

P. Shahi, D. J. Singh, J. P. Sun, L. X. Zhao, G. F. Chen, Y. Y. Lv, J. Li, J.-Q. Yan, D. G. Mandrus, and J.-G. Cheng, Bipolar conduction as the possible origin of the electronic transition in pentatellurides: Metallic vs semi- conducting behavior, Phys. Rev. X8, 021055 (2018)

work page 2018
[35]

Osakabe and K

T. Osakabe and K. Kakurai, Feasibility tests on pressure- transmitting media for single-crystal magnetic neutron diffraction under high pressure, Japanese Journal of Ap- plied Physics47, 6544 (2008). 14

work page 2008
[36]

Giannozzi, O

P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavaz- zoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carn- imeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Ko...

work page 2017
[37]

J. P. Perdew, K. Burke, and M. Ernzerhof, Generalized gradient approximation made simple, Phys. Rev. Lett. 77, 3865 (1996)

work page 1996
[38]

Grimme, J

S. Grimme, J. Antony, S. Ehrlich, and H. Krieg, A con- sistent and accurate ab initio parametrization of den- sity functional dispersion correction (dft-d) for the 94 elements h-pu, The Journal of Chemical Physics132, 154104 (2010)

work page 2010
[39]

Zhang, C

Y. Zhang, C. Wang, L. Yu, G. Liu, A. Liang, J. Huang, S. Nie, X. Sun, Y. Zhang, B. Shen, J. Liu, H. Weng, L. Zhao, G. Chen, X. Jia, C. Hu, Y. Ding, W. Zhao, Q. Gao, C. Li, S. He, L. Zhao, F. Zhang, S. Zhang, F. Yang, Z. Wang, Q. Peng, X. Dai, Z. Fang, Z. Xu, C. Chen, and X. J. Zhou, Electronic evidence of temperature-induced lifshitz transition and topolo...

work page 2017
[40]

M. M. Piva, R. Wawrzy´ nczak, N. Kumar, L. O. Kutelak, G. A. Lombardi, R. D. dos Reis, C. Felser, and M. Nick- las, Importance of the semimetallic state for the quantum hall effect in HfTe5, Phys. Rev. Mater.8, L041202 (2024)

work page 2024
[41]

J. Gao, M. Zhong, Q.-J. Liu, B. Tang, F.-S. Liu, and X.-J. Ma, Effects of pressure on structural, electronic, optical, and mechanical properties of zrte5: A density functional theory study, Physica B: Condensed Matter620, 413286 (2021)

work page 2021
[42]

Zhang, C

Y. Zhang, C. Wang, G. Liu, A. Liang, L. Zhao, J. Huang, Q. Gao, B. Shen, J. Liu, C. Hu, W. Zhao, G. Chen, X. Jia, L. Yu, L. Zhao, S. He, F. Zhang, S. Zhang, F. Yang, Z. Wang, Q. Peng, Z. Xu, C. Chen, and X. Zhou, Temperature-induced lifshitz transition in topological in- sulator candidate HfTe5, Science Bulletin62, 950 (2017)

work page 2017
[43]

Eguchi and S

G. Eguchi and S. Paschen, Robust scheme for magneto- transport analysis in topological insulators, Phys. Rev. B 99, 165128 (2019)

work page 2019
[44]

Manzoni, L

G. Manzoni, L. Gragnaniello, G. Aut` es, T. Kuhn, A. Sterzi, F. Cilento, M. Zacchigna, V. Enenkel, I. Vobornik, L. Barba, F. Bisti, P. Bugnon, A. Ma- grez, V. N. Strocov, H. Berger, O. V. Yazyev, M. Fonin, F. Parmigiani, and A. Crepaldi, Evidence for a strong topological insulator phase in ZrTe 5, Phys. Rev. Lett. 117, 237601 (2016)

work page 2016