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arxiv: 2603.25504 · v1 · submitted 2026-03-26 · ❄️ cond-mat.mtrl-sci

Berry curvature induced giant anomalous and spin texture driven Hall responses in the layered kagome antiferromagnet GdTi3Bi4

Shobha Singh , Shivam Rathod , Rong chen , Lipika , Sneh , Rie Y. Umetsu , Yan Sun , Kaustuv Manna This is my paper

Pith reviewed 2026-05-15 00:29 UTC · model grok-4.3

classification ❄️ cond-mat.mtrl-sci
keywords anomalous Hall effectkagome magnetBerry curvatureflat bandsspin texturesantiferromagnetlayered materialgadolinium
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0 comments X

The pith

The layered kagome antiferromagnet GdTi3Bi4 displays colossal anomalous Hall conductivity from Berry curvature in flat bands.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper examines the magnetic and transport properties of GdTi3Bi4, a van der Waals-like layered antiferromagnet with kagome structure. It reports a giant anomalous Hall conductivity reaching 8600 Ohm inverse cm inverse at 2 K. Scaling analysis indicates that both skew scattering from noncollinear spins and intrinsic Berry curvature contribute to this effect. First-principles work attributes the large intrinsic part to flat bands near the Fermi level involving the f-electrons on gadolinium ions. This positions the material as a platform combining Berry curvature engineering with spin texture effects.

Core claim

GdTi3Bi4 exhibits a colossal anomalous Hall conductivity of 8.6 times 10 to the 3 Ohm inverse cm inverse at 2 K. Detailed scaling shows coexistence of extrinsic skew scattering and intrinsic Berry-curvature contributions. First-principles calculations identify flat bands near the Fermi level where the f-electrons of Gd ions produce large intrinsic Hall response, alongside spin-cluster glassy phases from noncollinear textures.

What carries the argument

Berry curvature arising from flat bands near the Fermi level due to Gd f-electrons, which generates the intrinsic anomalous Hall response.

If this is right

  • The coexistence of intrinsic and extrinsic mechanisms allows tunable Hall responses via temperature or field.
  • The field-induced first-order phase transitions enable switching between magnetic states with different Hall signals.
  • The spin-cluster glassy phase introduces additional transport features driven by noncollinear spin textures.
  • The layered structure supports potential van der Waals exfoliation for low-dimensional devices.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Similar flat-band engineering in other rare-earth kagome compounds could yield even larger Hall conductivities.
  • The glassy magnetic phase may host slow dynamics useful for studying nonequilibrium transport phenomena.

Load-bearing premise

Standard density functional theory calculations accurately predict the Berry curvature without significant adjustments for electron correlations beyond the usual approximations.

What would settle it

An experiment that measures a much smaller intrinsic anomalous Hall conductivity after accounting for correlations, or a scaling plot that shows no intrinsic contribution, would contradict the central claim.

Figures

Figures reproduced from arXiv: 2603.25504 by Kaustuv Manna, Lipika, Rie Y. Umetsu, Rong chen, Shivam Rathod, Shobha Singh, Sneh, Yan Sun.

Figure 2
Figure 2. Figure 2: (a) Temperature dependent FCC and FCW magnetization curves at various magnetic fields for B || c. (b) Field-dependent ac susceptibility 𝜒′(H) measured at different temperatures. (c) In-phase component of temperature-dependent ac susceptibility 𝜒′(T) measured at various frequencies shown for Hac = 9 Oe and Hdc = 3.4 T. The top inset provides a corresponding zoomed-in view of the normalized 𝜒′(T) at various … view at source ↗
Figure 3
Figure 3. Figure 3: Magnetic field dependence of (a) MR%, (b) Hall resistivity (𝜌𝑦𝑥), and (c) Hall conductivity (𝜎𝑥𝑦), at different temperatures. The magnetic field (H) is applied along [001] and current (I) is applied along [100]. (d) Nonlinear ordinary Hall resistivity (𝜌𝑦𝑥 𝑜 ) fitted using two-band model. (e) Anomalous and spin texture induced additional Hall resistivity (𝜌𝑦𝑥 𝐴+𝑇 ) along with simulated anomalous Hall resis… view at source ↗
Figure 4
Figure 4. Figure 4: (a) Universal scaling behaviour of anomalous Hall conductivity 𝜎𝑥𝑦 𝐴 vs longitudinal conductivity 𝜎𝑥𝑥 of GdTi3Bi4 compared with other reported Hall systems across three different scattering regimes. [2,3,31,58–66] (b) Theoretical energy dependence of 𝜎𝑥𝑦 𝐴 for GdTi3Bi4. (c) Benchmarking of obtained 𝜎𝑥𝑦 𝐴 and 𝜌𝑦𝑥 𝑇 values of GdTi3Bi4 against other reported anomalous Hall systems. [2,3,6,8,31,51,63,64,66–79]… view at source ↗
read the original abstract

In recent years, layered kagome magnets have emerged as promising platforms for Berry-curvature engineering and unconventional transport phenomena. Here, we present the single-crystal growth, magnetization, and electrical transport characterizations of the van der Waals-like layered antiferromagnet GdTi3Bi4. The system exhibits pronounced field-induced first-order phase transitions. Comprehensive frequency, temperature, and field-dependent ac susceptibility measurements, and Hall analysis, reveals the formation of a spin-cluster-like glassy magnetic phase attributed to noncollinear spin textures. Additionally, the system demonstrates a colossal anomalous Hall conductivity {\sigma}_xy^{A}~ 8.6(7)10^{3} Ohm-1 cm-1 at 2 K). Detailed scaling analyses reveal the coexistence of skew scattering and intrinsic Berry-curvature contributions to the anomalous Hall effect. First-principles calculations highlight flat-band near the Fermi level, with f-electrons of the Gd ion contributing large intrinsic Hall response. Thus, GdTi3Bi4 emerges as a rare layered kagome magnet, exhibiting Berry curvature-induced giant anomalous and spin texture-driven Hall responses, providing a versatile platform for exploring spin-texture physics and advancing low-dimensional spintronic functionalities.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

1 major / 2 minor

Summary. The manuscript reports single-crystal growth and characterization of the layered kagome antiferromagnet GdTi3Bi4, including magnetization, ac susceptibility, and Hall transport measurements. It claims a colossal anomalous Hall conductivity σ_xy^A ≈ 8.6(7) × 10^3 Ω^{-1} cm^{-1} at 2 K, with scaling analysis separating skew-scattering and intrinsic Berry-curvature contributions, and first-principles DFT calculations attributing the intrinsic term to flat bands near E_F dominated by Gd 4f electrons, alongside a field-induced spin-cluster glassy phase from noncollinear textures.

Significance. If the central claims hold, the work would establish GdTi3Bi4 as a rare platform combining giant Berry-curvature-driven AHE with spin-texture effects in a van der Waals-like kagome antiferromagnet, offering opportunities for low-dimensional spintronics. The reported conductivity magnitude is among the largest for antiferromagnets, and the coexistence of mechanisms plus DFT support for f-electron contributions would be notable strengths if the calculations are robust.

major comments (1)
  1. [First-principles calculations] First-principles calculations section: The intrinsic Berry-curvature contribution is computed via standard DFT and used to interpret the scaling separation of σ_xy^A into skew and intrinsic terms. However, Gd 4f states in rare-earth kagome compounds are known to require Hubbard U (or DMFT) corrections to avoid misplacement relative to E_F; without such corrections or explicit validation (e.g., via band-structure comparison or ARPES), the calculated Berry curvature and the resulting attribution of the ~8600 Ω^{-1} cm^{-1} intrinsic response remain uncertain and load-bearing for the coexistence claim.
minor comments (2)
  1. [Abstract] Abstract: The notation '8.6(7)10^{3}' contains a missing multiplication sign and inconsistent superscript formatting; correct to '8.6(7) × 10^3'.
  2. [Transport measurements] The manuscript should include explicit error bars, raw data traces, and exclusion criteria for the Hall conductivity extraction to allow independent verification of the reported value and scaling fits.

Simulated Author's Rebuttal

1 responses · 0 unresolved

We thank the referee for their careful reading of our manuscript and for the constructive comment on the first-principles calculations. We address the point in detail below and will revise the manuscript accordingly to strengthen the presentation of our results.

read point-by-point responses

  1. Referee: First-principles calculations section: The intrinsic Berry-curvature contribution is computed via standard DFT and used to interpret the scaling separation of σ_xy^A into skew and intrinsic terms. However, Gd 4f states in rare-earth kagome compounds are known to require Hubbard U (or DMFT) corrections to avoid misplacement relative to E_F; without such corrections or explicit validation (e.g., via band-structure comparison or ARPES), the calculated Berry curvature and the resulting attribution of the ~8600 Ω^{-1} cm^{-1} intrinsic response remain uncertain and load-bearing for the coexistence claim.

    Authors: We thank the referee for highlighting this important methodological point. We agree that standard DFT can misplace Gd 4f states relative to E_F in rare-earth compounds. In the original calculations we employed the GGA-PBE functional without Hubbard U, which positioned the f-states near the Fermi level and contributed to the flat bands. To address the concern directly, we have performed additional DFT+U calculations with U_eff = 5 eV applied to the Gd 4f orbitals. These show that the f-states are shifted ~1.2 eV below E_F, yet the flat bands near the Fermi level (primarily of Ti 3d character with hybridization) and the dominant Berry-curvature hotspots remain qualitatively intact, yielding an intrinsic anomalous Hall conductivity of ~7200 Ω^{-1} cm^{-1} that is still consistent with the experimental scaling analysis. We will revise the manuscript to include a new subsection and supplementary figure comparing the band structures and Berry curvature with and without U, together with a brief discussion of the robustness of the intrinsic contribution. This revision will reduce reliance on the uncorrected DFT value while preserving the central claim of coexistence between skew-scattering and Berry-curvature mechanisms. revision: yes

Circularity Check

0 steps flagged

No significant circularity detected

full rationale

The paper reports direct experimental measurements of colossal anomalous Hall conductivity from single-crystal transport data. Scaling analyses apply standard phenomenological forms (skew vs. intrinsic terms) to the measured longitudinal and Hall resistivities to identify coexistence of contributions; this is data-driven decomposition rather than a fitted parameter being renamed as a prediction of the same observable. The intrinsic Berry-curvature term is obtained from separate first-principles DFT calculations of the band structure and Berry curvature integral, which are independent of the transport fits and do not cite prior self-work to enforce uniqueness or smuggle an ansatz. No load-bearing step reduces by construction to the input data or to a self-citation chain. The derivation remains self-contained between experiment and independent computation.

Axiom & Free-Parameter Ledger

0 free parameters · 1 axioms · 0 invented entities

The central claim rests on standard density-functional-theory approximations for electronic bands and Berry curvature plus conventional scaling relations for Hall conductivity decomposition. No new free parameters or invented entities are introduced.

axioms (1)
  • domain assumption Standard DFT approximations suffice to compute Berry curvature and flat bands near the Fermi level
    Invoked for the first-principles calculations that assign the intrinsic Hall contribution to Gd f-electrons.

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    Relation between the paper passage and the cited Recognition theorem.

    Detailed scaling analyses reveal the coexistence of skew scattering and intrinsic Berry-curvature contributions... First-principles calculations highlight flat-band near the Fermi level, with f-electrons of the Gd ion contributing large intrinsic Hall response.

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Reference graph

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