Lattice location of ion-implanted 6He in diamond
Pith reviewed 2026-05-10 19:23 UTC · model grok-4.3
The pith
Implanted helium-6 atoms settle into tetrahedral interstitial sites in diamond.
A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.
Core claim
By implanting 6He at 30 keV into single-crystal diamond and recording beta emission channeling patterns along several crystallographic axes at temperatures from 30 °C to 800 °C, the experiment shows that the atoms reside in tetrahedral interstitial sites. This assignment follows from the close match between the observed yields and simulated patterns calculated for T sites, while other candidate positions such as bond-centered or octahedral sites produce distinctly poorer agreement. Raising the temperature to 800 °C lowers the tetrahedral fraction by about 20 percent, which is taken as the onset of interstitial migration that allows the atoms either to reach lower-symmetry sites or to leave a
What carries the argument
Beta emission channeling, which records the angular distribution of beta particles emitted by the implanted 6He and compares those distributions to Monte Carlo simulations of yields expected for each possible lattice site.
If this is right
- Interstitial helium becomes mobile in diamond once the temperature reaches roughly 800 °C.
- The estimated activation energy of 1.63–2.89 eV for helium migration agrees with several independent theoretical calculations.
- Free interstitial helium cannot remain stable inside diamond on geological time scales.
- To persist inside diamond for long periods, helium must bind to defects, occupy inclusions, or form small bubbles.
Where Pith is reading between the lines
- The same emission-channeling approach could be used to map the sites of other light implanted nuclei in diamond or in related wide-band-gap materials.
- If the diffusion barrier is confirmed near 2 eV, diamond crystals recovered from the mantle should contain helium only in bound or clustered forms rather than as isolated interstitial atoms.
- Measurements at additional temperatures would allow a full Arrhenius plot and a more precise value for the migration barrier.
Load-bearing premise
That the 20 percent drop in tetrahedral occupancy observed at 800 °C arises solely from the beginning of interstitial diffusion rather than from competing temperature-dependent processes such as trapping at defects or escape to the surface.
What would settle it
Recording channeling patterns at several intermediate temperatures and finding either no change in site fraction or a temperature dependence that cannot be described by a single activation energy for diffusion.
Figures
read the original abstract
We report on the lattice location of the short-lived ion implanted nuclear probe 6He (t1/2=807 ms) in diamond, which was performed using the beta emission channeling method at CERN's ISOLDE facility. 6He was implanted with 30 keV into a single-crystalline artificial diamond sample kept at a temperature ranging from 30 deg C up to 800 deg C. By means of comparing the measured emission channeling patterns along different crystallographic directions with simulated yields for a variety of possible sites, we conclude that the implanted 6He occupies tetrahedral (T) interstitial sites, in agreement with theoretical predictions that T sites should be the preferred position of He in diamond. Implantation at 800 deg C resulted in a drop in the tetrahedral interstitial fraction by 20%, which we interpret as the onset of diffusion, 6He thus being able to change to lattice sites of low crystallographic symmetry, or reach the surface of the sample or escape to the bulk during its lifetime. We estimate the activation energy for interstitial migration of He to be around 1.63-2.89 eV, which agrees with theoretical predictions of 1.41 eV, 1.97 eV, 2.35 eV and 2.36 eV from the literature. Activation energies around 2 eV would mean that simple interstitial He cannot be stable in diamond on geological time scales, thus to remain inside, it should be bound to some defect in the material or exist in another form such as within inclusions of other minerals or liquids, or possibly small He bubbles.
Editorial analysis
A structured set of objections, weighed in public.
Referee Report
Summary. The paper reports beta emission channeling measurements on 30 keV 6He implanted into single-crystal diamond at temperatures from 30°C to 800°C. By direct comparison of the measured angular yield patterns along several crystallographic directions to Monte Carlo simulations for candidate interstitial and substitutional sites, the authors conclude that 6He occupies tetrahedral (T) interstitial sites. They further observe a 20% reduction in the T-site fraction at 800°C, which they interpret as the onset of interstitial diffusion, and estimate an activation energy for migration in the range 1.63–2.89 eV.
Significance. If the site assignment holds, the work supplies experimental confirmation of independent theoretical predictions for the preferred location of He in diamond. The ISOLDE beta-channeling approach with a short-lived probe is a standard, minimally perturbative method, and the central assignment rests on comparison to independent simulations rather than any parameter fitted to the same data set. The temperature-dependent observation, while secondary, carries implications for long-term He retention in diamond on geological timescales.
major comments (2)
- [Results section on pattern comparison] Results section on pattern comparison: the manuscript does not report quantitative goodness-of-fit metrics (e.g., reduced χ², overlap integrals, or site-fraction uncertainties) for the tetrahedral-site simulations versus alternative sites such as bond-centered or hexagonal. Without these values it is difficult to judge how conclusively other sites are excluded by the angular-yield data.
- [Discussion of high-temperature data] Discussion of high-temperature data: the activation-energy range 1.63–2.89 eV is obtained from the fraction change observed at a single temperature (800°C) under the assumption that the 20% drop is caused exclusively by the onset of interstitial diffusion. No full Arrhenius analysis or explicit exclusion of competing temperature-dependent processes (defect trapping, surface escape) is presented.
minor comments (3)
- [Abstract] Abstract: error bars on the reported tetrahedral fractions and the precise fitting procedure used to extract them are omitted, reducing the reader’s ability to assess the statistical weight of the 20% drop.
- The simulation parameters (number of trajectories, treatment of energy loss and straggling, detector solid angle) should be stated explicitly to allow independent reproduction of the calculated patterns.
- A compact table listing the extracted site fractions (with uncertainties) at each implantation temperature would improve clarity and facilitate comparison with future work.
Simulated Author's Rebuttal
We thank the referee for the positive recommendation and constructive comments on our manuscript. We address each major comment below.
read point-by-point responses
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Referee: Results section on pattern comparison: the manuscript does not report quantitative goodness-of-fit metrics (e.g., reduced χ², overlap integrals, or site-fraction uncertainties) for the tetrahedral-site simulations versus alternative sites such as bond-centered or hexagonal. Without these values it is difficult to judge how conclusively other sites are excluded by the angular-yield data.
Authors: We agree that quantitative metrics would strengthen the presentation of the site assignment. In the revised manuscript we will add reduced χ² values for the tetrahedral interstitial site versus bond-centered and hexagonal alternatives, together with the derived site-fraction uncertainties. These metrics show the tetrahedral site to be the clear best fit. revision: yes
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Referee: Discussion of high-temperature data: the activation-energy range 1.63–2.89 eV is obtained from the fraction change observed at a single temperature (800°C) under the assumption that the 20% drop is caused exclusively by the onset of interstitial diffusion. No full Arrhenius analysis or explicit exclusion of competing temperature-dependent processes (defect trapping, surface escape) is presented.
Authors: The reported range is an estimate based on the observed 20% drop at 800°C, the 807 ms lifetime of 6He, and the implantation depth, with the bounds reflecting different assumptions on the diffusion length needed to alter the channeling pattern. We will revise the text to state these assumptions explicitly and to note that competing processes such as defect trapping or surface escape cannot be ruled out with the present single-temperature data. The estimate remains consistent with the cited theoretical barriers. revision: partial
- A full Arrhenius analysis and definitive exclusion of competing temperature-dependent processes would require measurements at additional temperatures, which are not available in the current dataset.
Circularity Check
No significant circularity detected
full rationale
The paper derives its primary claim—that implanted 6He occupies tetrahedral interstitial sites—through direct comparison of measured beta emission channeling patterns (along multiple crystallographic directions) to independent Monte Carlo simulations of yields for candidate sites. This matching process uses no parameters fitted from the same experimental dataset and does not redefine any quantity in terms of the conclusion itself. The secondary interpretation of a 20% fraction drop at 800°C as the onset of diffusion, leading to an activation-energy estimate of 1.63-2.89 eV, is presented as an interpretive inference aligned with external literature values rather than a load-bearing derivation that reduces to self-citation or input redefinition. All cited theoretical predictions originate from independent prior work, and the experimental technique is standard and externally validated. The derivation chain remains self-contained against external benchmarks.
Axiom & Free-Parameter Ledger
free parameters (2)
- tetrahedral site fraction
- activation energy for interstitial migration
axioms (2)
- domain assumption Simulated beta emission channeling patterns for candidate sites accurately reproduce experimental yields when the correct site is occupied.
- domain assumption The observed drop in tetrahedral occupancy at 800 °C is caused by the onset of thermally activated diffusion.
Reference graph
Works this paper leans on
-
[1]
is similar to the one expected for simple inte rstitial mi- gration. Remarkably, in that study 4He was introduced into B- doped diamond via the nuclear reaction 10 B(n, α)7Li, meaning it was recoil-implanted with an energy around 1.5 M eV and distributed throughout the whole micro-crystalline diamond samples. Its out-diffusion could then be observed at te...
-
[2]
7 ×10 −4 1.01 10 B(n, α)7Li, MS
-
[3]
1.8 ×10 21 11.7 natural 4He, MS
-
[4]
6 ×10 −11 1.55 natural 3He, MS
-
[5]
1.6 ×10 −13 1.07 natural 4He, MS
-
[6]
4 ×10 −11 1.43 CVD implanted 3He, NRA IV. CONCLUSIONS Without doubt, the most frequently found lattice site of ion implanted He in diamond is the tetrahedral intersti tial T site. The possible fractions of He on other lattice sites of higher symmetry must be small for all implantation temperatures. In particular, none of the sites theoretically predicted ...
-
[7]
A. A. Gippius, V. S. Vavilov, A. M. Zaitsev, B. S. Zhakupbekov, Defects production and interaction in ion-implanted diamond. Physica B+C 116 , 187 (1983)
work page 1983
-
[8]
V. D. Tkachev, A. M. Zaitsev, and V. V. Tkachev , Chemical activity of noble gases in diamond, Phys. Stat. Solidi B 129 , 129 (1985)
work page 1985
-
[9]
A. A. Gippius, R. A. Khmelnitskiy, V. A. Dravin, and S. D. Tkachenko, Formation and characterization of graphi tized lay- ers in ion-implanted diamond, Diam. Relat. Mater. 8, 1631 (1999)
work page 1999
-
[10]
A. M. Zaitsev, Optical Properties of Diamond (Springer Berlin, Heidelberg, 2001) , pp 249-251
work page 2001
-
[11]
Dischler, Handbook of Spectral Lines in Diamond , Vol
B. Dischler, Handbook of Spectral Lines in Diamond , Vol. 1 (Springer Berlin, Heidelberg, 2012) p. 286
work page 2012
-
[12]
J. Forneris, A. Battiato, D. Gatto Monticone, F. Picollo, G. Am- ato, L. Boarino, G. Brida, I. P. Degiovanni, E. Enric o, M. Gen- ovese, E. Moreva, P. Traina, C. Verona, G. Verona Rin ati, and P. Olivero, Electroluminescence from a diamond devi ce with ion-beam-micromachined buried graphitic electrodes, Nucl. In- strum. Methods Phys. Res. Sect. B 348 , 187 (2015)
work page 2015
-
[13]
J. Forneris, A. Tengattini, S. Ditalia Tchernij, F. Picollo, A. Bat- tiato, P. Traina, I. P. Degiovanni, E. Moreva, G. Brida, V. Grilj, N. Skukan, M. Jakši ć, M. Genovese, and P. Olivero, Creation and characterization of He-related color centers in diamond, J. Luminescence 179 , 59 (2016)
work page 2016
-
[14]
G. Prestopino, M. Marinelli, E. Milani, C. Veron a, G. Verona- Rinati, P. Traina, E. Moreva, I. P. Degiovanni, M. Genovese, S. Ditalia Tchernij, F. Picollo, P. Olivero, and J. Fo rneris, Photo- physical properties of He-related color centers in diamond, Appl. Phys. Lett. 111 , 111105 (2017)
work page 2017
-
[15]
A. Tallaire, O. Brinza, M. De Feudis, A. Ferrier , N. Touati, L. Binet, L. Nicolas, T. Delord, G. Hétet, T. Herzig, S . Pezzagna, P. Goldner, and J. Achard, Synthesis of loose nanod iamonds containing nitrogen-vacancy centers for magnetic an d thermal sensing, ACS Appl. Nano Mater. 2, 5952 (2019)
work page 2019
-
[16]
M. V. Kozlova, A. A. Khomich, R. A. Khmelnitsk y, A. A. Averin, A. I. Kovalev, O. N. Poklonskaya, I. I. Vla sov, A. V. Khomich, and V. G. Ralchenko, Study of color centers in radia- tion-modified diamonds, J. Phys. Conf. Series 2103 , 012223 (2021)
work page 2021
-
[17]
I. R. Gullick, Developing diamond platforms for quantum and photonic technologie s, PhD Thesis, University of Warwick (2023)
work page 2023
-
[18]
A. A. Khomich, A. Popovich, and A. V. Khomich, Photolumi- nescence Spectra of Helium Ion-Implanted Diamond, Materials 17 , 5168 (2024)
work page 2024
-
[19]
J. O. Orwa, K. Ganesan, J. Newnham, C. Santori, P. Barclay, K. M. C. Fu, R. G. Beausoleil, I. Aharonovich, B. A. Fa irchild, P. Olivero, A. D. Greentree, and S. Prawer, An uppe r limit on the lateral vacancy diffusion length in diamond, Diam. Relat. Mater. 24 , 6 (2012)
work page 2012
- [20]
-
[21]
D. McCloskey, D. Fox, N. O'Hara, V. Usov, D. Sc anlan, N. McEvoy, G. S. Duesberg, G. L. W. Cross, H. Z. Zhang, and J. F. Donegan, Helium ion microscope generated nitrogen-vacancy centres in type Ib diamond, Appl. Phys. Lett. 104 , 031109 (2014)
work page 2014
-
[22]
E. E. Kleinsasser, M. M. Stanfield, J. K. Q. Ba nks, Z. Zhu, W. D. Li, V. M. Acosta, H. Watanabe, K. M. Itoh, and K. M. C. Fu, High density nitrogen-vacancy sensing surface creat ed via He + ion implantation of 12 C diamond, Appl. Phys. Lett. 108 , 202401 (2016)
work page 2016
-
[23]
F. Fávaro de Oliveira, S. A. Momenzadeh, D. Antonov, H. Fed- der, A. Denisenko, and J. Wrachtrup, On the efficiency of com- bined ion implantation for the creation of near-surface nitrogen- vacancy centers in diamond, Phys. Status Solidi A 213 , 2044 (2016)
work page 2044
-
[24]
S. Santonocito, A. Denisenko, R. Stöhr, W. Knolle, M. Schreck, M. Markham, J. Isoya, and J. Wrachtrup, NV centres by vacan- cies trapping in irradiated diamond: experiments and modelling, New J. Phys. 26 , 013054 (2024)
work page 2024
-
[25]
W. Lin, Y. Li, S. de Graaf, G. Wang, J. Lin, H. Zhang, S. Zhao, D. Chen, S. Liu, J. Fan, B. J. Kooi, Y. Lu, T. Yang, C. H. Yang, C. T. Liu, and J. J. Kai, Creating two-dimensional so lid helium via diamond lattice confinement, Nat. Comm. 13 , 5990 (2022)
work page 2022
-
[26]
M. Zima and S. Zashu, Primitive helium in diam onds, Science 219 , 4588 (1983)
work page 1983
-
[27]
S. Basu, A. P. Jones, A. B. Verchovsky, S. P. Kelley, and F. M. Stuart, An overview of noble gas (He, Ne, Ar, Xe) contents and isotope signals in terrestrial diamond, Earth-Science Reviews 126 , 235 (2013)
work page 2013
-
[28]
S. Timmerman, H. Yeow, M. Honda, D. Howell, A. L. Jaques, M. Y. Krebs, S. Woodland, D. G. Pearson, J. N. Ávila, and T. R. Ireland, U-Th/He systematics of fluid-rich ‘fibrous’ diamonds – Evidence for pre- and syn-kimberlite eruption ages, Chemical Geology 515 , 22 (2019)
work page 2019
-
[29]
S. Timmerman, M. Honda, A. D. Burnham, Y. Ameli n, S. Woodland, D. G. Pearson, A. L. Jaques, C. Le Losq, V. C. Ben- nett, G. P. Bulanova, C. B. Smith, J. W. Harris, and E Tohver, Primordial and recycled helium isotope signatures in the mantle transition zone, Science 365 , 695 (2019)
work page 2019
- [30]
-
[31]
A. P. Koscheev, M. D. Gromov, R. K. Mohapatra, and U. Ott, History of trace gases in presolar diamonds inferre d from ion- implantation experiments, Nature 412 , 615 (2001)
work page 2001
-
[32]
Ott, Planetary and pre-solar gases in meteo rites, Geochem- istry 74 , 519 (2014)
U. Ott, Planetary and pre-solar gases in meteo rites, Geochem- istry 74 , 519 (2014)
work page 2014
-
[33]
A. Aghajamali, A. A. Shiryaev, and N. A. Marks , Molecular dynamics approach for predicting release temperatures of noble gases in presolar nanodiamonds, Astrophys. J. 916 , 85 (2021) . 11
work page 2021
-
[34]
D. Lal, An important source of 4He (and 3He) in diamonds, Earth and Planetary Science Letters 96 , 1 (1989)
work page 1989
-
[35]
R. C. Wiens, D. Lal, W. Rison, and J. F. Wacker, Helium iso- tope diffusion in natural diamonds, Geochimica et Cosmo- chimica Acta 58 , 1747 (1994)
work page 1994
-
[36]
R. Granot and R. Baer, A tight-binding potential for helium in carbon systems, J. Chem. Phys. 129 , 214102 (2008)
work page 2008
-
[37]
J. P. Goss, R. J. Eyre, P. R. Briddon, and A. Mainwood, Density functional simulations of noble-gas impurities in diamond, Phys. Rev.B 80 , 085204 (2009)
work page 2009
-
[38]
R. Granot and R. Baer, Can primordial helium surv ive in dia- monds on geologic time scales?, unpublished, ResearchGate (2015)
work page 2015
-
[39]
D. J. Cherniak, E. B. Watson, V. Meunier, and N. Kharche, Di ffusion of helium, hydrogen and deuterium in diamond: Ex- periment, theory and geochemical applications, Geochimica et Cosmochimica Acta 232 , 206 (2018)
work page 2018
-
[40]
R. A. Beck, Y .Huang, A. Petrone, J. W. Abbott, P. J. Pauzaus- kie, and X. Li, Electronic structures and spectroscopic signatures of noble-gas-doped nanodiamonds, ACS Phys. Chem. Au 3, 299 (2023)
work page 2023
- [41]
-
[42]
W. R. Allen, Lattice site of He implanted in Si and diamond, Mat. Res. Soc. Symp. Proc. 279 , 433 (1993)
work page 1993
-
[43]
W. R. Allen, The lattice location of helium implanted in α-SiC, J. Nucl. Mater. 210 , 318 (1994)
work page 1994
-
[44]
H. Hofsäss and G. Lindner, Emission channeling and blocking, Phys. Rep. 201 , 121 (1991)
work page 1991
-
[45]
Wahl and the ISOLDE collaboration, Emission channeling studies of Li in semiconductors, Phys
U. Wahl and the ISOLDE collaboration, Emission channeling studies of Li in semiconductors, Phys. Rep. 280 , 145 (1997)
work page 1997
-
[46]
Wahl, Advances in electron emission channel ing measure- ments in semiconductors, Hyperfine Interact
U. Wahl, Advances in electron emission channel ing measure- ments in semiconductors, Hyperfine Interact. 129 , 349 (2000)
work page 2000
-
[47]
U. Wahl, J. G. Correia, A. Czermak, S. Jahn, P. Jalocha, J. Marques, A. Rudge, F. Schopper, J. C. Soares, and A. Van- tomme, Position-sensitive Si pad detectors for electron emission channeling experiments, Nucl. Instrum. Methods Phys. Res., Sect. A 524 , 245 (2004)
work page 2004
-
[48]
L. M. C. Pereira, A. Vantomme, and U. Wahl, Char acterizing defects with ion beam analysis and channeling techn iques, in Characterisation and Control of Defects in Semiconductors , ed- ited by F. Tuomisto (Institution of Engineering and Technology, Stevenage, UK, 2019), Chapt.11, pp. 501–563
work page 2019
-
[49]
E. David-Bosne, U. Wahl, J. G. Correia, T. A. L. Lima, A. Van- tomme, and L. M. C. Pereira, A generalized fitting tool for anal- ysis of two-dimensional channeling patterns, Nucl. Instrum. Methods Phys. Res., Sect. B 462 , 102 (2020)
work page 2020
-
[50]
R. Catherall, W. Andreazza, M. Breitenfeldt, A. Dorsival, G. J. Focker, T. P. Gharsa, T. J. Giles, J. L. Grenard, F . Locci, P. Martins, S. Marzari, J. Schipper, A. Shornikov, and T. Stora, The ISOLDE facility, J. Phys. G 44 , 094002 (2017)
work page 2017
-
[51]
L. Penescu, R. Catherall, J. Lettry, and T. Stor a, Development of high efficiency Versatile Arc Discharge Ion Source at CERN ISOLDE, Rev. Sci. Instrum. 81 , 02A906 (2010)
work page 2010
-
[52]
U. C. Bergmann, G. Auböck, R. Catherall, J. Cederkä ll, C. A. Diget, L. Fraile, S. Franchoo, H. Fynbo, H. Gausemel, U. Georg, T. Giles, H. Jeppesen, O. C. Jonsson, U. Köster, J. Lettry, T. Nilsson, K. Peräjärvi, H. Ravn, K. Riisager, L. Weiss man, J. Äystö, and The ISOLDE Collaboration, Production yiel ds of noble-gas isotopes from ISOLDE UC x/graphite ta...
work page 2003
-
[53]
M. R. Silva, U. Wahl, J. G. Correia, L. M. Amori m, and L. M. C. Pereira, A versatile apparatus for on-line emission channeling experiments, Rev. Sci. Instrum. 84 , 073506 (2013)
work page 2013
-
[54]
See Supplemental Material at [ URL will be inserted by pub- lisher ] for more details on many-beam simulations, chi sq uare analysis of possible lattice sites, and background correction
-
[55]
J. F. Ziegler, M. D. Ziegler, and J. P. Biersac k, SRIM - The stopping and range of ions in matter (2010), Nucl. Instrum. Methods Phys. Res., Sect. B 268 , 1818 (2010)
work page 2010
-
[56]
U. Wahl, J. G. Correia, R. Villarreal, E. Bourgeo is, M. Gulka, M. Nesladek, A. Vantomme, and L. M. C. Pereira, Direct struc- tural identification and quantification of the spli t-vacancy con- figuration for implanted Sn in diamond, Phys. Rev. Lett. 125 , 045301 (2020)
work page 2020
-
[57]
E. Corte, G. Andrini, E. Nieto Hernández, V. Pu gliese, A. Costa, G. Magchiels, J. Moens, S. M. Tunhuma, R. Vill arreal, L. M. C. Pereira, A. Vantomme, J. G. Correia, E. Bern ardi, P. Traina, I. P. Degiovanni, E. Moreva, M. Genovese, S . Ditalia Tchernij, P. Olivero, U. Wahl and J. Forneris, Magn esium-va- cancy optical centers in diamond, ACS Photonics 1...
work page 2023
-
[58]
U. Wahl, J. G. Correia, A. Costa, B. Biesmans, G. Magchiels, S. M. Tunhuma, A. Lamelas, A. Vantomme, and L. M. C. Pe- reira, Beta emission channeling patterns from 6He in diamond, Zenodo, V1 (2026), DOI 10.5281/zenodo.19370263
-
[59]
C. Ronning, M. Dalmer, M. Uhrmacher, M. Restle, U. Vetter, L. Ziegeler, H. Hofsäss, T. Gehrke, K. Järrendahl, R. F. Davis, and the ISOLDE Collaboration, Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery, J. Appl. Phys. 87 , 2149 (2000)
work page 2000
- [60]
-
[61]
K. Bharuth-Ram, H. Hofsäss, M. Restle, and U. Wahl, Emission channeling studies of defect annealing in the wide band gap sem- iconductors ZnTe and ZnSe, Nucl. Instrum. Methods Phys. Res. Sect. B 156 , 244 (1999)
work page 1999
-
[62]
U. Wahl, S. G. Jahn, M. Restle, C. Ronning, H. Q uintel, K. Bharuth-Ram, H. Hofsäss, and the ISOLDE Collaboration, Al- pha-emission channeling investigations of the lattice location of Li in Ge, Nucl. Instrum. Methods Phys. Res. Sect. B 118 , 76 (1996)
work page 1996
-
[63]
Jahn, the ISOLDE collaboration, H
S.G. Jahn, the ISOLDE collaboration, H. Hofsäs s, M. Restle, C. Ronning, H. Quintel, K. Bharuth-Ram, and U. Wahl, Thermal stability of substitutional Ag in CdTe, J. Cryst. Growth 161 , 172 (1996)
work page 1996
- [64]
-
[65]
L. C. Luther and W. J. Moore, Diffusion of Heli um in Silicon, Germanium, and Diamond, J. Chem. Phys. 41 , 1018 (1964)
work page 1964
- [66]
-
[67]
S. Zashu and H. Hiyagon, Degassing mechanisms of noble gases from carbonado diamonds, Geochimica et Cosmochimica Acta 59 , 1321 (1995) . S1 Supplemental material to: Lattice location of implanted He in diamond U. Wahl, J. G. Correia, A. Costa, B. Biesmans, G. Magchiels, S. M. Tunhuma, A. Lamelas, A. Vantomme, and L. M. C. Pereira Note: numbers of referenc...
work page 1995
-
[68]
Some details on “many-beam” simulations for β− particles from 6He in the diamond structure Details on how the many-beam simulations of electron channeling in diamond were performed can be found in the supplementary material of Refs. [50,51]. Compared t o these descriptions, the many-beam simulations use d here differ in two details. First, angular pattern...
work page 2000
-
[69]
Chi square analysis of possible 6He lattice sites 1.1 One-site fits FIG. S2. Relative chi square of one-site fits as a function of the position along the <111> direction (a)-(d), <100> d irection (e)-(h), and <110> direction (i)-(l). The zero point of the distance scale has been fixed at the T site for all displacements. Relative chi squares of fit are gi...
-
[70]
Background correction Fast electrons moving in matter are subject to pronounced scattering; it is therefore not possible to measure electron emission channeling effects that are not accompanie d by a background of scattered electrons. The major contribu- tions are electrons that are backscattered from inside the sample or from the walls of the vacuum cham...
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