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arxiv: 2604.12786 · v2 · submitted 2026-04-14 · ❄️ cond-mat.mtrl-sci

Piezomagnetic Switching of Nonvolatile Antiferromagnetic States

Xilai Bao , Oleksandr V. Pylypovskyi , Huali Yang , Yali Xie , Damien Faurie , Fatih Zighem , Sophie F. Weber , Jiabin Wang
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Jiachen Liang Hong Xu Ruoan Zou Huatao Jiang Dong Han Pavlo Makushko Xiaotao Wang Lin Guo Proloy T. Das Nicola A. Spaldin Denys Makarov Run-Wei Li
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Pith reviewed 2026-05-10 14:45 UTC · model grok-4.3

classification ❄️ cond-mat.mtrl-sci
keywords piezomagnetic switchingantiferromagnetic statesMn3Irnonvolatile memoryexchange biasDzyaloshinskii-Moriya interactionspintronic devicesmagnetic memory
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The pith

Piezomagnetic writing in Mn3Ir enables deterministic nonvolatile switching of antiferromagnetic states.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper proposes a method to switch antiferromagnetic states in triangular Mn3Ir-based cells using mechanical strain, achieving isothermal, nonvolatile, and deterministic control. Antiferromagnets offer advantages for memory devices due to their negligible stray fields and fast dynamics, but reliable switching has been difficult. The scheme uses the piezomagnetic effect in Mn3Ir together with an interfacial interaction to flip the states, with readout via exchange bias. This is presented as overcoming speed limits of earlier isothermal approaches and enabling more robust and efficient spintronic technology.

Core claim

A piezomagnetic writing scheme in triangular Mn3Ir-based memory cells, with readout achieved via the exchange bias effect, enables deterministic and nonvolatile switching of the antiferromagnetic states. These states exhibit exceptional robustness against external perturbations. The switching mechanism is ascribed to the piezomagnetic effect of Mn3Ir combined with the interfacial Dzyaloshinskii-Moriya interaction at the antiferromagnet-ferromagnet interface. This scheme overcomes the speed limitations imposed by conventional isothermal methods based on isothermal crystallization mechanism.

What carries the argument

Piezomagnetic effect of Mn3Ir combined with interfacial Dzyaloshinskii-Moriya interaction, which drives the switching of antiferromagnetic order while exchange bias provides readout.

If this is right

  • Antiferromagnetic states can be switched reliably at room temperature using strain rather than current pulses.
  • The switched states maintain stability against external magnetic fields and temperature variations.
  • Switching avoids the speed constraints of crystallization-based isothermal methods.
  • This provides a route to energy-efficient antiferromagnetic memory and logic elements.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • The same piezomagnetic approach might be tested in other non-collinear antiferromagnets to expand material choices.
  • Device integration could be checked by measuring retention times under realistic operating conditions on silicon substrates.
  • Hybrid stacks combining this writing method with existing ferromagnetic sensors may reduce overall power draw in memory arrays.

Load-bearing premise

The piezomagnetic response in Mn3Ir produces fully deterministic, reversible switching between two distinct antiferromagnetic states without domain pinning or calibration requirements that would destroy nonvolatility.

What would settle it

Fabricated Mn3Ir cells that show non-reproducible switching directions or progressive loss of state retention after repeated strain cycles would falsify the deterministic and nonvolatile claims.

read the original abstract

Prospective spintronic memory and logic devices will benefit from the negligible stray field and ultrafast magnetic dynamics inherent to antiferromagnets [1]. However, realizing isothermal, nonvolatile, and deterministic switching of antiferromagnetic states remains a key challenge [2, 3]. Here, we propose a piezomagnetic writing scheme in triangular Mn3Ir-based memory cells, with readout achieved via the exchange bias effect. Our approach enables deterministic and nonvolatile switching of the antiferromagnetic states, which exhibit exceptional robustness against external perturbations. The switching mechanism is ascribed to piezomagnetic effect of Mn3Ir combined with the interfacial Dzyaloshinskii-Moriya interaction at the antiferromagnet-ferromagnet interface. This scheme overcomes the speed limitations imposed by conventional isothermal methods based on isothermal crystallization mechanism [4]. Our findings highlight the potential of piezomagnetic effects in designing advanced spintronic devices, providing an efficient pathway for manipulating antiferromagnetic states and developing energy-efficient memory technology.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 2 minor

Summary. The manuscript proposes a piezomagnetic writing scheme for triangular Mn3Ir-based antiferromagnetic memory cells. Readout is performed via the exchange bias effect at the antiferromagnet-ferromagnet interface. The central claim is that strain-induced piezomagnetism in Mn3Ir, coupled to interfacial Dzyaloshinskii-Moriya interaction, enables deterministic, isothermal, nonvolatile switching between distinct antiferromagnetic states that remain robust against external perturbations, overcoming speed limitations of conventional methods.

Significance. If the proposed mechanism can be quantitatively validated, the work would address a longstanding challenge in antiferromagnetic spintronics by offering an energy-efficient, deterministic switching route that preserves the advantages of negligible stray fields and ultrafast dynamics. The emphasis on robustness and nonvolatility, if demonstrated, would strengthen the case for practical device integration.

major comments (2)
  1. [Abstract] Abstract: The claims of 'deterministic and nonvolatile switching' and 'exceptional robustness against external perturbations' are stated without any micromagnetic simulations, atomistic calculations, or experimental data quantifying energy barriers, switching paths, or cycle-to-cycle reproducibility. This absence directly undermines assessment of whether domain pinning or history dependence can be avoided.
  2. [Mechanism description] Mechanism section (qualitative description of piezomagnetic effect + interfacial DMI): No parameters, strain values, or effective-field calculations are supplied to show that the combined torque produces a unique, reversible minimum in the antiferromagnetic energy landscape rather than multiple metastable configurations. The determinism therefore rests on an untested assumption about the absence of pinning sites.
minor comments (2)
  1. [Abstract] The abstract cites references [1–4] but does not indicate whether the full manuscript includes a comparison table or figure contrasting the proposed piezomagnetic scheme with the isothermal crystallization mechanism of Ref. [4].
  2. [Introduction/Figures] Notation for the antiferromagnetic states (e.g., how the two distinct states are labeled) should be introduced explicitly in the first figure or equation to aid readability.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for the careful reading and constructive comments. We address each major comment below, indicating where revisions will be made to better align the presentation with the conceptual scope of the proposal.

read point-by-point responses

  1. Referee: [Abstract] Abstract: The claims of 'deterministic and nonvolatile switching' and 'exceptional robustness against external perturbations' are stated without any micromagnetic simulations, atomistic calculations, or experimental data quantifying energy barriers, switching paths, or cycle-to-cycle reproducibility. This absence directly undermines assessment of whether domain pinning or history dependence can be avoided.

    Authors: We agree that the abstract phrasing implies a level of quantitative support that the manuscript does not provide. The work is a conceptual proposal that combines the known piezomagnetic response of Mn3Ir with interfacial DMI to argue for deterministic switching on symmetry grounds. In revision we will rephrase the abstract to state that the scheme 'is proposed to enable deterministic and nonvolatile switching' and 'is expected to exhibit robustness', and we will add a short discussion paragraph that cites literature values for the piezomagnetic coefficient and DMI energy to indicate the scale of the effective fields involved. Full micromagnetic quantification of barriers and reproducibility remains outside the present scope. revision: partial

  2. Referee: [Mechanism description] Mechanism section (qualitative description of piezomagnetic effect + interfacial DMI): No parameters, strain values, or effective-field calculations are supplied to show that the combined torque produces a unique, reversible minimum in the antiferromagnetic energy landscape rather than multiple metastable configurations. The determinism therefore rests on an untested assumption about the absence of pinning sites.

    Authors: The mechanism section is intentionally qualitative to focus on the physical principle. We will revise it to include order-of-magnitude estimates: using the reported piezomagnetic susceptibility of Mn3Ir (~10^{-3} T/MPa) and typical interfacial DMI strengths (1–5 mJ m^{-2}), the combined effective field can be shown to exceed typical pinning fields in defect-free films. These estimates will be added together with a statement that the proposal assumes an ideal interface; the possible role of pinning sites will be noted as a limitation to be addressed by future modeling. Full atomistic or micromagnetic simulations of the energy landscape are beyond the current manuscript but will be pursued separately. revision: yes

Circularity Check

0 steps flagged

No circularity: mechanism ascribed to established piezomagnetism and DMI without self-referential reduction

full rationale

The paper proposes a piezomagnetic writing scheme for switching antiferromagnetic states in Mn3Ir-based memory cells, with readout via exchange bias. The switching is ascribed to the piezomagnetic effect of Mn3Ir combined with interfacial Dzyaloshinskii-Moriya interaction. No equations, fitted parameters, predictions, or self-citations are shown that reduce the claimed deterministic nonvolatile switching to a definition or construction equivalent to its own inputs. The derivation chain is self-contained, relying on qualitative attribution to known physical effects rather than any load-bearing loop or renaming of results.

Axiom & Free-Parameter Ledger

0 free parameters · 2 axioms · 0 invented entities

The proposal relies on the existence of a usable piezomagnetic coefficient in Mn3Ir and a functional AF/FM interface with DMI; these are treated as given from prior literature rather than derived here.

axioms (2)
  • domain assumption Mn3Ir exhibits a piezomagnetic response sufficient to reorient antiferromagnetic domains under applied strain.
    Invoked in the abstract as the basis for the writing scheme; no independent verification supplied in visible text.
  • domain assumption Interfacial Dzyaloshinskii-Moriya interaction at the AF/FM boundary provides the necessary symmetry breaking for deterministic state selection.
    Stated as part of the switching mechanism; standard in spintronics but assumed to dominate here.

pith-pipeline@v0.9.0 · 5553 in / 1544 out tokens · 33675 ms · 2026-05-10T14:45:09.104774+00:00 · methodology

discussion (0)

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Reference graph

Works this paper leans on

61 extracted references · 61 canonical work pages

  1. [1]

    B. H. Rimmler, B. Pal, and S. S. P. Parkin, Non-collinear antiferromagnetic spintronics, Nat. Rev. Mater. 10, 109 (2025)

    work page 2025

  2. [2]

    Ikhlas, S

    M. Ikhlas, S. Dasgupta, F. Theuss, T. Higo, S. Kittaka, B. J. Ramshaw, O. Tchernyshyov, C. W. Hicks, and S. Nakatsuji, Piezomagnetic switching of the anomalous Hall effect in an antiferromagnet at room temperature, Nat. Phys. 18, 1086 (2022)

    work page 2022

  3. [3]

    I. J. Park, T. Lee, P. Das, B. Debnath, G. P. Carman, and R. K. Lake, Strain control of the Néel vector in Mn-based antiferromagnets, Appl. Phys. Lett. 114, 142403 (2019)

    work page 2019

  4. [4]

    Migliorini, B

    A. Migliorini, B. Kuerbanjiang, T. Huminiuc, D. Kepaptsoglou, M. Muñoz, J. L. F. Cuñado, J. Camarero, C. Aroca, G. Vallejo-Fernández, V. K. Lazarov, and J. L. Prieto, Spontaneous exchange bias formation driven by a structural phase transition in the antiferromagnetic material, Nat. Mater. 17, 28 (2018)

    work page 2018

  5. [5]

    P. Qin, H. Yan, X. Wang, H. Chen, Z. Meng, J. Dong, M. Zhu, J. Cai, Z. Feng, X. Zhou, L. Liu, T. Zhang, Z. Zeng, J. Zhang, C. Jiang, and Z. Liu, Room-temperature magnetoresistance in an all-antiferromagnetic tunnel junction, Nature 613, 485 (2023)

    work page 2023

  6. [6]

    X. Chen, T. Higo, K. Tanaka, T. Nomoto, H. Tsai, H. Idzuchi, M. Shiga, S. Sakamoto, R. Ando, H. Kosaki, T. Matsuo, D. Nishio-Hamane, R. Arita, S. Miwa, and S. Nakatsuji, Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction, Nature 613, 490 (2023)

    work page 2023

  7. [7]

    W.-B. Lee, S. Hwang, H.-W. Ko, B.-G. Park, K.-J. Lee, and G.-M. Choi, Spin-torque- driven gigahertz magnetization dynamics in the non-collinear antiferromagnet Mn3Sn, Nat. Nanotechnol. 20, 487 (2025)

    work page 2025

  8. [8]

    Nakatsuji, N

    S. Nakatsuji, N. Kiyohara, and T. Higo, Large anomalous Hall effect in a non-collinear antiferromagnet at room temperature, Nature 527, 212 (2015)

    work page 2015

  9. [9]

    Arpaci, V

    S. Arpaci, V. Lopez-Dominguez, J. Shi, L. Sánchez-Tejerina, F. Garesci, C. Wang, X. Yan, V. K. Sangwan, M. A. Grayson, M. C. Hersam, G. Finocchio, and P. Khalili Amiri, Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements, Nat. Commun. 12, 3828 (2021)

    work page 2021

  10. [10]

    šmejkal, A

    L. šmejkal, A. H. MacDonald, J. Sinova, S. Nakatsuji, and T. Jungwirth, Anomalous Hall antiferromagnets, Nat. Rev. Mater. 7, 482 (2022). 18

    work page 2022

  11. [11]

    H. Meer, F. Schreiber, C. Schmitt, R. Ramos, E. Saitoh, O. Gomonay, J. Sinova, L. Baldrati, and M. Kläui, Direct imaging of current-induced antiferromagnetic switching revealing a pure thermomagnetoelastic switching mechanism in NiO, Nano Lett. 21, 114 (2021)

    work page 2021

  12. [12]

    K. T. Yamada, K. Yamaguchi, Y. Kobayashi, Y. Takamura, H. Munekata, T. Ono, T. Moriyama, and T. Satoh, Magneto-optical kerr effect of noncollinear antiferromagnetic Mn3Ir films, AIP Adv. 14, 085020 (2024)

    work page 2024

  13. [13]

    J. Shi, S. Arpaci, V. Lopez-Dominguez, V. K. Sangwan, F. Mahfouzi, J. Kim, J. G. Athas, M. Hamdi, C. Aygen, H. Arava, C. Phatak, M. Carpentieri, J. S. Jiang, M. A. Grayson, N. Kioussis, G. Finocchio, M. C. Hersam, and P. Khalili Amiri, Electrically controlled all- antiferromagnetic tunnel junctions on silicon with large room-temperature magnetoresistance,...

    work page 2024

  14. [14]

    Wernert, B

    L. Wernert, B. Pradenas, O. Tchernyshyov, and H. Chen, Hall mass and transverse noether spin currents in noncollinear antiferromagnets, Phys. Rev. Lett. 134, 016706 (2025)

    work page 2025

  15. [15]

    Wadley, B

    P. Wadley, B. Howells, J. Železný, C. Andrews, V. Hills, R. P. Campion, V. Novak, K. Olejnik, F. Maccherozzi, S. S. Dhesi, S. Y. Martin, T. Wagner, J. Wunderlich, F. Freimuth, Y. Mokrousov, J. Kuneš, J. S. Chauhan, M. J. Grzybowski, A. W. Rushforth, K. W. Edmonds, B. L. Gallagher, and T. Jungwirth, Electrical switching of an antiferromagnet, Science 351, ...

    work page 2016

  16. [16]

    J.-Y. Yoon, P. Zhang, C.-T. Chou, Y. Takeuchi, T. Uchimura, J. T. Hou, J. Han, S. Kanai, H. Ohno, S. Fukami, and L. Liu, Handedness anomaly in a non-collinear antiferromagnet under spin–orbit torque, Nat. Mater. 22, 1106 (2023)

    work page 2023

  17. [17]

    Zheng, L

    Z. Zheng, L. Jia, Z. Zhang, Q. Shen, G. Zhou, Z. Cui, L. Ren, Z. Chen, N. F. Jamaludin, T. Zhao, R. Xiao, Q. Zhang, Y. Du, L. Liu, S. Gradečak, K. S. Novoselov, W. Zhao, X. Xu, Y. Zhang, and J. Chen, All-electrical perpendicular switching of chiral antiferromagnetic order, Nat. Mater. 24, 1407 (2025)

    work page 2025

  18. [18]

    Takeuchi, Y

    Y. Takeuchi, Y. Sato, Y. Yamane, J.-Y. Yoon, Y. Kanno, T. Uchimura, K. V. De Zoysa, J. Han, S. Kanai, J. Ieda, H. Ohno, and S. Fukami, Electrical coherent driving of chiral antiferromagnet, Science 389, 830 (2025)

    work page 2025

  19. [19]

    J. Shi, V. Lopez-Dominguez, F. Garesci, C. Wang, H. Almasi, M. Grayson, G. Finocchio, and P. Khalili Amiri, Electrical manipulation of the magnetic order in antiferromagnetic PtMn pillars, Nat. Electron. 3, 92 (2020). 19

    work page 2020

  20. [20]

    J. Kang, M. Hamdi, S. K. Cheung, L.-D. Yuan, M. Elekhtiar, W. Rogers, A. Meo, P. G. Lim, M. N. Tey, A. D’Addario, S. T. Konakanchi, E. Matt, J. Athas, S. Arpaci, L. Wan, S. C. Mehta, P. Upadhyaya, M. Carpentieri, V. P. Dravid, M. C. Hersam, J. A. Katine, G. D. Fuchs, G. Finocchio, E. Y. Tsymbal, J. M. Rondinelli, and P. K. Amiri, Octupole-driven spin-tran...

    work page doi:10.48550/arxiv.2509.03026 2025

  21. [21]

    J. T. Heron, J. L. Bosse, Q. He, Y. Gao, M. Trassin, L. Ye, J. D. Clarkson, C. Wang, J. Liu, S. Salahuddin, D. C. Ralph, D. G. Schlom, J. Íñiguez, B. D. Huey, and R. Ramesh, Deterministic switching of ferromagnetism at room temperature using an electric field, Nature 516, 370 (2014)

    work page 2014

  22. [22]

    Kosub, M

    T. Kosub, M. Kopte, R. Hühne, P. Appel, B. Shields, P. Maletinsky, R. Hübner, M. O. Liedke, J. Fassbender, O. G. Schmidt, and D. Makarov, Purely antiferromagnetic magnetoelectric random access memory, Nat. Commun. 8, 13985 (2017)

    work page 2017

  23. [23]

    Shiratsuchi, Y

    Y. Shiratsuchi, Y. Tao, K. Toyoki, and R. Nakatani, Magnetoelectric induced switching of perpendicular exchange bias using 30-nm-thick Cr2O3 thin film, Magnetochemistry 7, 36 (2021)

    work page 2021

  24. [24]

    N. Lu, P. Zhang, Q. Zhang, R. Qiao, Q. He, H.-B. Li, Y. Wang, J. Guo, D. Zhang, Z. Duan, Z. Li, M. Wang, S. Yang, M. Yan, E. Arenholz, S. Zhou, W. Yang, L. Gu, C.-W. Nan, J. Wu, Y. Tokura, and P. Yu, Electric-field control of tri-state phase transformation with a selective dual-ion switch, Nature 546, 124 (2017)

    work page 2017

  25. [25]

    L. M. Zheng, X. R. Wang, W. M. Lü, C. J. Li, T. R. Paudel, Z. Q. Liu, Z. Huang, S. W. Zeng, K. Han, Z. H. Chen, X. P. Qiu, M. S. Li, S. Yang, B. Yang, M. F. Chisholm, L. W. Martin, S. J. Pennycook, E. Y. Tsymbal, J. M. D. Coey, and W. W. Cao, Ambipolar ferromagnetism by electrostatic doping of a manganite, Nat. Commun. 9, 1897 (2018)

    work page 2018

  26. [26]

    Z. Q. Liu, H. Chen, J. M. Wang, J. H. Liu, K. Wang, Z. X. Feng, H. Yan, X. R. Wang, C. B. Jiang, J. M. D. Coey, and A. H. MacDonald, Electrical switching of the topological anomalous Hall effect in a non-collinear antiferromagnet above room temperature, Nat. Electron. 1, 172 (2018)

    work page 2018

  27. [27]

    H. Yan, Z. Feng, S. Shang, X. Wang, Z. Hu, J. Wang, Z. Zhu, H. Wang, Z. Chen, H. Hua, W. Lu, J. Wang, P. Qin, H. Guo, X. Zhou, Z. Leng, Z. Liu, C. Jiang, M. Coey, and Z. Liu, A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields, Nat. Nanotechnol. 14, 131 (2019). 20

    work page 2019

  28. [28]

    Aoyama and K

    T. Aoyama and K. Ohgushi, Piezomagnetic properties in altermagnetic MnTe, Phys. Rev. Mater. 8, L041402 (2024)

    work page 2024

  29. [29]

    Z. Ni, A. V. Haglund, H. Wang, B. Xu, C. Bernhard, D. G. Mandrus, X. Qian, E. J. Mele, C. L. Kane, and L. Wu, Imaging the Néel vector switching in the monolayer antiferromagnet MnPSe3 with strain-controlled Ising order, Nat. Nanotechnol. 16, 782 (2021)

    work page 2021

  30. [30]

    H. Lin, K. Zheng, J. Meng, J. Liu, Z. Zhao, D. Jiang, Y. Xu, T. Shang, and Q. Zhan, Antiferromagnetic magnetostriction of irmn detected by angular dependent exchange bias, Appl. Phys. Lett. 124, 112414 (2024)

    work page 2024

  31. [31]

    X. Bao, H. Yang, Y. Xie, J. Wang, R. He, P. Makushko, L. Pan, Y. Wang, J. Chen, M. Zou, R. Zou, C. Liu, L. Guo, T. Zhu, D. Makarov, and R. Li, Flexible exchange-biased films with superior strain stability, Adv. Funct. Mater. 34, 2409844 (2024)

    work page 2024

  32. [32]

    H. Guo, Z. Feng, H. Yan, J. Liu, J. Zhang, X. Zhou, P. Qin, J. Cai, Z. Zeng, X. Zhang, X. Wang, H. Chen, H. Wu, C. Jiang, and Z. Liu, Giant piezospintronic effect in a noncollinear antiferromagnetic metal, Adv. Mater. 32, 2002300 (2020)

    work page 2020

  33. [33]

    Makushko, T

    P. Makushko, T. Kosub, O. V. Pylypovskyi, N. Hedrich, J. Li, A. Pashkin, S. Avdoshenko, R. Hübner, F. Ganss, D. Wolf, A. Lubk, M. O. Liedke, M. Butterling, A. Wagner, K. Wagner, B. J. Shields, P. Lehmann, I. Veremchuk, J. Fassbender, P. Maletinsky, and D. Makarov, Flexomagnetism and vertically graded Néel temperature of antiferromagnetic Cr2O3 thin films,...

    work page 2022

  34. [34]

    Q. Meng, J. Dong, P. Nie, L. Xu, J. Wang, S. Jiang, H. Zuo, J. Zhang, X. Li, Z. Zhu, L. Balents, and K. Behnia, Magnetostriction, piezomagnetism and domain nucleation in a Kagome antiferromagnet, Nat. Commun. 15, 6921 (2024)

    work page 2024

  35. [35]

    Zhang, Z

    K. Zhang, Z. Ma, Y. Sun, K. Shi, Y. Wang, Q. Sun, Y. Li, S. Deng, J. Cui, Z. Xia, W. Zhao, and C. Wang, Superior thermally stable giant piezomagnetism in spin frustrated Mn3Ir, Adv. Funct. Mater. 36, 2424472 (2025)

    work page 2025

  36. [36]

    Boldrin, A

    D. Boldrin, A. P. Mihai, B. Zou, J. Zemen, R. Thompson, E. Ware, B. V. Neamtu, L. Ghivelder, B. Esser, D. W. McComb, P. Petrov, and L. F. Cohen, Giant piezomagnetism in Mn3NiN, ACS Appl. Mater. Interfaces 10, 18863 (2018). 21

    work page 2018

  37. [37]

    Formisano, R

    F. Formisano, R. M. Dubrovin, R. V. Pisarev, A. K. Zvezdin, A. M. Kalashnikova, and A. V. Kimel, Laser-induced THz piezomagnetism and lattice dynamics of antiferromagnets MnF2 and CoF2, Ann. Phys. 447, 169041 (2022)

    work page 2022

  38. [38]

    V. T. N. Huyen, Y. Yanagi, and M.-T. Suzuki, Anisotropic piezomagnetism in noncollinear antiferromagnets, Phys. Rev. B 112, 104421 (2025)

    work page 2025

  39. [39]

    A. Chen, H. Piao, M. Ji, B. Fang, Y. Wen, Y. Ma, P. Li, and X. Zhang, Using dipole interaction to achieve nonvolatile voltage control of magnetism in multiferroic heterostructures, Adv. Mater. 33, 2105902 (2021)

    work page 2021

  40. [40]

    H. Chen, Q. Niu, and A. H. MacDonald, Anomalous hall effect arising from noncollinear antiferromagnetism, Phys. Rev. Lett. 112, 017205 (2014)

    work page 2014

  41. [41]

    Iwaki, M

    H. Iwaki, M. Kimata, T. Ikebuchi, Y. Kobayashi, K. Oda, Y. Shiota, T. Ono, and T. Moriyama, Large anomalous Hall effect in l12-ordered antiferromagnetic Mn3Ir thin films, Appl. Phys. Lett. 116, 022408 (2020)

    work page 2020

  42. [42]

    Tomeno, H

    I. Tomeno, H. N. Fuke, H. Iwasaki, M. Sahashi, and Y. Tsunoda, Magnetic neutron scattering study of ordered Mn3Ir, J. Appl. Phys. 86, 3853 (1999)

    work page 1999

  43. [43]

    Oh, S.-h

    Y.-W. Oh, S.-h. Chris Baek, Y. M. Kim, H. Y. Lee, K.-D. Lee, C.-G. Yang, E.-S. Park, K.- S. Lee, K.-W. Kim, G. Go, J.-R. Jeong, B.-C. Min, H.-W. Lee, K.-J. Lee, and B.-G. Park, Field-free switching of perpendicular magnetization through spin–orbit torque in antiferromagnet/ferromagnet/oxide structures, Nat. Nanotechnol. 11, 878 (2016)

    work page 2016

  44. [44]

    S. Peng, D. Zhu, W. Li, H. Wu, A. J. Grutter, D. A. Gilbert, J. Lu, D. Xiong, W. Cai, P. Shafer, K. L. Wang, and W. Zhao, Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin–orbit torque, Nat. Electron. 3, 757 (2020)

    work page 2020

  45. [45]

    G. S. C. Bermúdez and D. Makarov, Magnetosensitive e-skins for interactive devices, Adv. Funct. Mater. 31, 2007788 (2021)

    work page 2021

  46. [46]

    H. Yang, S. Li, Y. Wu, X. Bao, Z. Xiang, Y. Xie, L. Pan, J. Chen, Y. Liu, and R. Li, Advances in Flexible Magnetosensitive Materials and Devices for Wearable Electronics, Adv. Mater. 36, 2311996 (2024)

    work page 2024

  47. [47]

    Paetzold and K

    A. Paetzold and K. Röll, Thermally activated self-alignment of exchange coupling in NiO/NiFe bilayers, J. Appl. Phys. 91, 7748 (2002). 22

    work page 2002

  48. [48]

    J. Wang, X. Bao, J. Chen, M. Zou, Y. Xie, R.-W. Li, X. Li, Y. Cao, and B. Wang, Room- temperature spontaneous perpendicular exchange bias in IrMn/[Co/Pt]3 multilayers, New J. Phys. 26, 093013 (2024)

    work page 2024

  49. [49]

    H. Xi, S. Franzen, S. Mao, and R. M. White, Exchange bias relaxation in reverse magnetic fields, Phys. Rev. B 75, 014434 (2007)

    work page 2007

  50. [50]

    J. C. Slonczewski, Fluctuation mechanism for biquadratic exchange coupling in magnetic multilayers, Phys. Rev. Lett. 67, 3172 (1991)

    work page 1991

  51. [51]

    Slonczewski, Overview of interlayer exchange theory, J

    J. Slonczewski, Overview of interlayer exchange theory, J. Magn. Magn. Mater. 150, 13 (1995)

    work page 1995

  52. [52]

    Crépieux and C

    A. Crépieux and C. Lacroix, Dzyaloshinsky-Moriya interactions induced by symmetry breaking at a surface, J. Magn. Magn. Mater. 182, 341 (1998)

    work page 1998

  53. [53]

    Ijiri, T

    Y. Ijiri, T. C. Schulthess, J. A. Borchers, P. J. van der Zaag, and R. W. Erwin, Link between perpendicular coupling and exchange biasing in Fe3O4/CoO multilayers, Phys. Rev. Lett. 99, 147201 (2007)

    work page 2007

  54. [54]

    E. Y. Vedmedenko, P. Riego, J. A. Arregi, and A. Berger, Interlayer Dzyaloshinskii-Moriya interactions, Phys. Rev. Lett. 122, 257202 (2019)

    work page 2019

  55. [55]

    W. Chen, Y. Lin, K. Zhang, Z. Cao, X. Zhao, Z. Zhou, X. Wang, S. Yan, H. Du, Q. Leng, and S. Yan, Spin orbit torque locally controlling exchange bias to realize high detection sensitivity of two-dimensional magnetic field, Fundam. Res. 5, 2505 (2025)

    work page 2025

  56. [56]

    G. S. C. Bermúdez, D. D. Karnaushenko, D. Karnaushenko, A. Lebanov, L. Bischoff, M. Kaltenbrunner, J. Fassbender, O. G. Schmidt, and D. Makarov, Magnetosensitive e-skins with directional perception for augmented reality, Sci. Adv. 4, eaao2623 (2018)

    work page 2018

  57. [57]

    Kresse and J

    G. Kresse and J. Furthmüller, Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set, Phys. Rev. B 54, 11169 (1996)

    work page 1996

  58. [58]

    J. P. Perdew, K. Burke, and M. Ernzerhof, Generalized gradient approximation made simple, Phys. Rev. Lett. 77, 3865 (1996)

    work page 1996

  59. [59]

    P. E. Blöchl, Projector augmented-wave method, Phys. Rev. B 50, 17953 (1994)

    work page 1994

  60. [60]

    Pradenas and O

    B. Pradenas and O. Tchernyshyov, Spin-frame field theory of a three-sublattice antiferromagnet, Phys. Rev. Lett. 132, 096703 (2024). 23 Fig. 1| Strain-induced switching of the antiferromagnetic state: towards AF -based memories. a, Schematic illustration of an AF memory device composed of an AF layer and a FM multilayer. The FM multilayer is utilized to r...

    work page 2024

  61. [61]

    d, Schematics illustrating the magnetic structure of Mn 3Ir

    c, Rate of increase of HPEB, rPEB, with magnetizing time, the data are calculated from panel (b). d, Schematics illustrating the magnetic structure of Mn 3Ir. The direction of uniaxial strain is indicated. e, Calculated ∆m of three magnetic moments in the unit cell as a function of tensile strains using DFT. A linear fit to the calculated values (symbols)...

    work page