pith. sign in

arxiv: 2604.18935 · v1 · submitted 2026-04-21 · ❄️ cond-mat.mtrl-sci · cond-mat.str-el

Proximity Magnetism in Mn(Bi,Sb)2Te4-(Bi,Sb)2Te3/MnTe Natural Heterostructures

Owen A. Vail , Shu-Wei Wang , Yasen Hou , Dinura Hettiarachchi , Jean-Felix Milette , Tim B. Eldred , Wenpei Gao , Wendy Sarney
show 8 more authors
Haile Ambaye Jong Keum Valeria Lauter George J. de Coster Matthew J. Gilbert Don Heiman Jagadeesh S. Moodera Hang Chi
This is my paper

Pith reviewed 2026-05-10 03:04 UTC · model grok-4.3

classification ❄️ cond-mat.mtrl-sci cond-mat.str-el
keywords proximity magnetismmagnetic topological insulatorsspin-orbit torqueanomalous Hall effectheterostructuresMnTeexchange couplinginterdiffusion
0
0 comments X

The pith

Self-organized Mn(Bi,Sb)2Te4 layers mediate exchange fields above their 20 K Neel temperature, inducing anomalous Hall effect with interfacial ordering above 200 K and enabling field-free spin-orbit torque switching at 300 kA cm-2.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

When MnTe interfaces with (Bi,Sb)2Te3, manganese interdiffusion creates alternating self-organized Mn(Bi,Sb)2Te4 septuple lamellae and (Bi,Sb)2Te3 quintuple layers that remain exchange coupled to the MnTe. Above the 20 K Neel temperature of the Mn(Bi,Sb)2Te4 itself, these layers transmit an exchange field that produces an anomalous Hall effect at the (Bi,Sb)2Te3/MnTe interface while raising the interfacial ordering temperature above 200 K. The resulting magnetic interface supports robust, deterministic spin-orbit torque switching of magnetization without any external field and at a low critical current density of 300 kA cm-2. This architecture combines topological and magnetic orders across a chalcogenide backbone through proximity effects.

Core claim

Mn interdiffusion stabilizes Mn(Bi,Sb)2Te4 septuple lamellae that, above their own 20 K Neel temperature, mediate the exchange field from MnTe to generate anomalous Hall effect at the (Bi,Sb)2Te3 interface with an enhanced interfacial Neel temperature exceeding 200 K; this proximity magnetism then produces deterministic, field-free spin-orbit torque switching at a critical current density of 300 kA cm-2.

What carries the argument

Self-organized Mn(Bi,Sb)2Te4 septuple lamellae that serve as an exchange mediator between the MnTe antiferromagnet and the (Bi,Sb)2Te3 topological insulator layers.

If this is right

  • Anomalous Hall effect persists at the interface above 20 K through the mediated exchange field.
  • Interfacial magnetic ordering temperature rises above 200 K.
  • Deterministic spin-orbit torque switching occurs without external magnetic field.
  • Switching requires only a low critical current density of 300 kA cm-2.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Varying the thickness or composition of the (Bi,Sb)2Te3 layers could tune the strength of the proximity-induced ordering for different operating temperatures.
  • Similar self-organized lamellae might appear in other magnetic topological insulator heterostructures and provide a general route to field-free switching.
  • Device-scale integration of these natural interfaces could reduce the energy cost of spintronic memory elements that currently need external fields.

Load-bearing premise

The observed anomalous Hall effect and field-free switching arise exclusively from the exchange field mediated by the self-organized Mn(Bi,Sb)2Te4 layers rather than from defects, strain, or other unaccounted interface effects.

What would settle it

Transport measurements or polarized neutron reflectometry on control samples engineered to suppress Mn interdiffusion and prevent formation of the septuple lamellae, yet still exhibiting high-temperature anomalous Hall effect or field-free switching, would show that other mechanisms are responsible.

read the original abstract

Magnetic topological insulators and their heterostructures provide great opportunities in coupling band topology with nontrivial spin configuration for enhanced spintronic device performance as well as designing totally new magnetoelectric systems and functionalities. We find that Mn interdiffusion from MnTe when interfaced with (Bi,Sb)2Te3 stabilizes as self-organized Mn(Bi,Sb)2Te4 septuple lamellae amongst alternating (Bi,Sb)2Te3 quintuple layers, as observed using scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. We further demonstrate a valuable combination of magnetic and topological orders in these naturally formed Mn(Bi,Sb)2Te4-(Bi,Sb)2Te3 heterostructures that are exchange coupled with MnTe. Magnetotransport experiments and quantum magnetism simulations reveal that, above its own Neel temperature TN of 20 K, Mn(Bi,Sb)2Te4 mediates the exchange field leading to an anomalous Hall effect at the (Bi,Sb)2Te3/MnTe interface, with an enhanced interfacial TN exceeding 200 K. This novel magnetic interface in turn allows a robust and deterministic spin-orbit torque switching without an external magnetic field at a low critical current density of 300 kA cm-2. The antiferromagnetically coupled architecture of Mn(Bi,Sb)2Te4-(Bi,Sb)2Te3/MnTe, featuring unique magnetic and topological proximity effects across a chalcogenide backbone, is rich in fundamental interface physics and holds potential for practical applications in spintronics.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

3 major / 2 minor

Summary. The paper reports that Mn interdiffusion at the MnTe/(Bi,Sb)2Te3 interface stabilizes self-organized Mn(Bi,Sb)2Te4 septuple lamellae alternating with (Bi,Sb)2Te3 quintuple layers, as confirmed by STEM and polarized neutron reflectometry. Magnetotransport measurements and quantum magnetism simulations indicate that these layers, exchange-coupled to MnTe, mediate an exchange field that produces an anomalous Hall effect at the (Bi,Sb)2Te3/MnTe interface above the bulk Néel temperature of 20 K, with an enhanced interfacial ordering temperature exceeding 200 K. This proximity magnetism enables robust, deterministic, field-free spin-orbit torque switching at a low critical current density of 300 kA cm^{-2}.

Significance. If the central attribution holds, the work establishes a practical route to engineer high-temperature magnetic proximity effects in topological insulator heterostructures via self-organized natural interfaces, with direct relevance to spintronic devices requiring low-power, field-free switching. Strengths include the direct structural confirmation via STEM and depth-sensitive PNR, which ground the existence of the septuple lamellae, and the combination of transport data with simulations to link structure to the observed AHE and SOT. The low critical current density and temperature robustness would represent a notable advance if alternative contributions can be excluded.

major comments (3)
  1. [Magnetotransport experiments] Magnetotransport section: The claim that Mn(Bi,Sb)2Te4 mediates the exchange field leading to AHE above 20 K (with interfacial TN > 200 K) is load-bearing for the central result, yet the temperature dependence is summarized without visible full datasets, error bars on the Hall resistivity, or explicit fitting procedures that would distinguish this from possible defect- or strain-induced contributions at the interface.
  2. [Quantum magnetism simulations] Quantum magnetism simulations: The simulations are used to support the mediation mechanism and temperature scaling, but the specific values of interlayer exchange coupling and the assumptions about how the septuple-layer ordering temperature is enhanced by MnTe are not shown to be uniquely constrained by the transport data; this leaves open whether the model is predictive or post-hoc.
  3. [Spin-orbit torque switching] SOT switching results: The field-free deterministic switching at 300 kA cm^{-2} is attributed to the enhanced interfacial magnetism, but without control samples (e.g., MnTe/(Bi,Sb)2Te3 without the self-organized lamellae) or direct confirmation that the switching polarity reverses with the MnTe magnetization, alternative interface mechanisms cannot be excluded.
minor comments (2)
  1. [Abstract] The abstract states an 'enhanced interfacial TN exceeding 200 K' but does not specify the exact temperature at which the AHE signal vanishes or the criterion used to extract this value; a figure or table with the full temperature sweep would improve clarity.
  2. [Introduction] Notation for the heterostructure (Mn(Bi,Sb)2Te4-(Bi,Sb)2Te3/MnTe) is used consistently but could be defined once in the introduction with a schematic to aid readers unfamiliar with the septuple/quintuple layering.

Simulated Author's Rebuttal

3 responses · 1 unresolved

We thank the referee for the detailed and constructive review. The comments have prompted us to strengthen the presentation of our data and analysis. Below we respond point by point to the major comments.

read point-by-point responses

  1. Referee: Magnetotransport section: The claim that Mn(Bi,Sb)2Te4 mediates the exchange field leading to AHE above 20 K (with interfacial TN > 200 K) is load-bearing for the central result, yet the temperature dependence is summarized without visible full datasets, error bars on the Hall resistivity, or explicit fitting procedures that would distinguish this from possible defect- or strain-induced contributions at the interface.

    Authors: We agree that full datasets improve transparency. The complete temperature-dependent Hall resistivity curves with error bars are shown in Supplementary Figure S3. The anomalous Hall resistivity is obtained by subtracting the ordinary Hall term determined from a linear fit to the high-field data; this procedure is now described in the supplementary methods section. We have added error bars to the main-text temperature plot (revised Fig. 3) and a short paragraph outlining the fitting protocol. The persistence of the AHE signal above the bulk Néel temperature of 20 K remains evident and is inconsistent with simple defect-induced effects given the structural characterization. revision: yes

  2. Referee: Quantum magnetism simulations: The simulations are used to support the mediation mechanism and temperature scaling, but the specific values of interlayer exchange coupling and the assumptions about how the septuple-layer ordering temperature is enhanced by MnTe are not shown to be uniquely constrained by the transport data; this leaves open whether the model is predictive or post-hoc.

    Authors: The interlayer exchange constants are taken from published DFT results and neutron-scattering data on MnBi2Te4 and MnTe. In the revised supplementary information we now list the exact numerical values employed, together with a sensitivity analysis showing that only an interfacial ordering temperature above ~200 K reproduces the measured AHE temperature dependence. While the model is not claimed to be uniquely predictive, the added parameter table and robustness checks demonstrate that the enhancement is required by the data rather than chosen arbitrarily. revision: yes

  3. Referee: SOT switching results: The field-free deterministic switching at 300 kA cm^{-2} is attributed to the enhanced interfacial magnetism, but without control samples (e.g., MnTe/(Bi,Sb)2Te3 without the self-organized lamellae) or direct confirmation that the switching polarity reverses with the MnTe magnetization, alternative interface mechanisms cannot be excluded.

    Authors: We acknowledge that ideal control samples without the self-organized septuple layers are not available, because Mn interdiffusion occurs spontaneously during growth and defines the interface. The polarity of the observed switching is nevertheless consistent with the MnTe magnetization direction as read out from the sign of the anomalous Hall effect. We have expanded the discussion section to address possible alternative mechanisms and to note the limitation regarding control samples. revision: partial

standing simulated objections not resolved
  • Fabrication of MnTe/(Bi,Sb)2Te3 control samples that lack the self-organized Mn(Bi,Sb)2Te4 lamellae, since Mn interdiffusion is an intrinsic consequence of the growth process used to form the heterostructure.

Circularity Check

0 steps flagged

No circularity: experimental claims rest on direct measurements

full rationale

The paper's central results are experimental: STEM and PNR confirm the self-organized Mn(Bi,Sb)2Te4 lamellae; magnetotransport measures the AHE persisting above bulk TN=20 K; SOT switching is observed at 300 kA cm-2 without external field. Quantum magnetism simulations are invoked only for interpretation of the interfacial exchange, not as a derivation that predicts the measured quantities from parameters fitted to the same data. No equation, ansatz, or self-citation chain reduces the reported TN enhancement or switching current to an input by construction. The derivation chain is therefore self-contained against external benchmarks.

Axiom & Free-Parameter Ledger

0 free parameters · 1 axioms · 0 invented entities

The central claim rests on standard condensed-matter assumptions about magnetic exchange and topological band structure plus experimental characterization; no free parameters, ad-hoc axioms, or invented entities are introduced in the abstract.

axioms (1)
  • standard math Standard assumptions of condensed matter physics regarding band topology, magnetic ordering, and exchange coupling at interfaces.
    Invoked to interpret the anomalous Hall effect and proximity magnetism above the bulk TN.

pith-pipeline@v0.9.0 · 5671 in / 1506 out tokens · 55607 ms · 2026-05-10T03:04:32.950568+00:00 · methodology

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.

Reference graph

Works this paper leans on

46 extracted references · 46 canonical work pages

  1. [1]

    J.S.M., S.- W.W

    The work at MIT was supported by the ARO (W911NF-20-2-0061 and DURIP W911NF-20-1-0074), National Science Foundation (NSF-DMR 1700137) and Office of Naval Research (N00014-20-1-2306). J.S.M., S.- W.W. and Y.H. thank the Center for Integrated Quan- tum Materials (NSF-DMR 1231319) for financial sup- port. S.-W.W. acknowledges the support from the Na- tional ...

    work page

  2. [2]

    was partially supported by NSF under Grant No

    T.B.E. was partially supported by NSF under Grant No. DGE 1633587. The electron microscopy was performed at the Analytical Instrumentation Fa- cility (AIF) at North Carolina State University, which is supported by the State of North Carolina and NSF (Award No. ECCS-2025064). The AIF is a member of the North Carolina Research Triangle Nanotechnol- ogy Netw...

    work page

  3. [3]

    A.; Felser, C.; Beidenkopf, H

    Bernevig, B. A.; Felser, C.; Beidenkopf, H. Progress and prospects in magnetic topological materials.Nature 2022,603, 41–51

    work page 2022

  4. [4]

    Chang, C.-Z.; Liu, C.-X.; MacDonald, A. H. Collo- quium: Quantum anomalous Hall effect.Reviews of Mod- ern Physics2023,95, 011002

    work page

  5. [5]

    P.; Cava, R

    Heremans, J. P.; Cava, R. J.; Samarth, N. Tetradymites as thermoelectrics and topological insulators.Nature Re- views Materials2017,2, 17049

    work page

  6. [6]

    Control of mag- netism by electric fields.Nature Nanotechnology2015, 10, 209–220

    Matsukura, F.; Tokura, Y.; Ohno, H. Control of mag- netism by electric fields.Nature Nanotechnology2015, 10, 209–220

    work page

  7. [7]

    M.; Jungwirth, T.; Sinova, J.; Thiaville, A.; Garello, K.; Gambardella, P

    Manchon, A.; ˇZelezn´ y, J.; Miron, I. M.; Jungwirth, T.; Sinova, J.; Thiaville, A.; Garello, K.; Gambardella, P. Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems.Reviews of Modern Physics 2019,91, 035004

    work page 2019

  8. [8]

    L.; Hughes, T

    He, Q. L.; Hughes, T. L.; Armitage, N. P.; Tokura, Y.; Wang, K. L. Topological spintronics and magnetoelec- tronics.Nature Materials2022,21, 15–23

    work page

  9. [9]

    Chi, H.; Moodera, J. S. Progress and prospects in the quantum anomalous Hall effect.APL Materials2022, 10, 090903

    work page

  10. [10]

    Chang, C.-Z. et al. Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topo- logical Insulator.Science2013,340, 167–170

    work page

  11. [11]

    Otrokov, M. M. et al. Prediction and observation of an antiferromagnetic topological insulator.Nature2019, 576, 416–422

    work page

  12. [12]

    Rienks, E. D. L. et al. Large magnetic gap at the Dirac point in Bi 2Te3/MnBi2Te4 heterostructures.Na- ture2019,576, 423–428

    work page

  13. [13]

    Z.; Guo, Z.; Xu, Z.; Wang, J.; Chen, X

    Deng, Y.; Yu, Y.; Shi, M. Z.; Guo, Z.; Xu, Z.; Wang, J.; Chen, X. H.; Zhang, Y. Quantum anomalous Hall ef- fect in intrinsic magnetic topological insulator MnBi2Te4. Science2020,367, 895–900

    work page

  14. [14]

    V.; Bo- rysiuk, J.; Heider, T.; Pluciski, .; Park, K.; Georgescu, A

    Deng, H.; Chen, Z.; Woo, A.; Konczykowski, M.; Sobczak, K.; Sitnicka, J.; Fedorchenko, I. V.; Bo- rysiuk, J.; Heider, T.; Pluciski, .; Park, K.; Georgescu, A. B.; Cano, J.; Krusin-Elbaum, L. High- temperature quantum anomalous Hall regime in a MnBi2Te4/Bi2Te3 superlattice.Nature Physics2021, 17, 36–42

    work page

  15. [15]

    V.; Springholz, G.; Hol´ y, V.; Jungwirth, T

    Kriegner, D.; V´ yborn´ y, K.; Olejn´ ık, K.; Reichlov´ a, H.; Nov´ ak, V.; Marti, X.; Gazquez, J.; Saidl, V.; Nˇ emec, P.; Volobuev, V. V.; Springholz, G.; Hol´ y, V.; Jungwirth, T. 8 Multiple-Stable Anisotropic Magnetoresistance Memory in Antiferromagnetic MnTe.Nature Communications 2016,7, 11623

    work page 2016

  16. [16]

    K.; Zang, J.; Wang, K

    Yin, G.; Yu, J.-X.; Liu, Y.; Lake, R. K.; Zang, J.; Wang, K. L. Planar Hall Effect in Antiferromagnetic MnTe Thin Films.Physical Review Letters2019,122, 106602

    work page

  17. [17]

    Krempask´ y, J. et al. Altermagnetic lifting of Kramers spin degeneracy.Nature2024,626, 517–522

    work page

  18. [18]

    S.; Assaf, B

    Katmis, F.; Lauter, V.; Nogueira, F. S.; Assaf, B. A.; Jamer, M. E.; Wei, P.; Satpati, B.; Freeland, J. W.; Eremin, I.; Heiman, D.; Jarillo-Herrero, P.; Mood- era, J. S. A high-temperature ferromagnetic topological insulating phase by proximity coupling.Nature2016, 533, 513–516

    work page

  19. [19]

    Awana, G. et al. Critical analysis of proximity-induced magnetism in MnTe/Bi 2Te3 heterostructures.Physical Review Materials2022,6, 053402

    work page

  20. [20]

    Bhattacharjee, N.; Mahalingam, K.; Fedorko, A.; Lauter, V.; Matzelle, M.; Singh, B.; Grutter, A.; Will- Cole, A.; Page, M.; McConney, M.; Markiewicz, R.; Bansil, A.; Heiman, D.; Sun, N. X. Topological Anti- ferromagnetic Van Der Waals Phase in Topological In- sulator/Ferromagnet Heterostructures Synthesized by a CMOS-Compatible Sputtering Technique.Advanc...

    work page

  21. [21]

    Antiferromagneticα-MnTe: Molten- Salt-Assisted Chemical Vapor Deposition Growth and Magneto-Transport Properties.Chemistry of Materials 2022,34, 873–880

    Li, S.; Wu, J.; Liang, B.; Liu, L.; Zhang, W.; Wazir, N.; Zhou, J.; Liu, Y.; Nie, Y.; Hao, Y.; Wang, P.; Wang, L.; Shi, Y.; Li, S. Antiferromagneticα-MnTe: Molten- Salt-Assisted Chemical Vapor Deposition Growth and Magneto-Transport Properties.Chemistry of Materials 2022,34, 873–880

    work page 2022

  22. [22]

    He, Q. L. et al. Exchange-biasing topological charges by antiferromagnetism.Nature Communications2018,9, 2767

    work page

  23. [23]

    Z.; Zhan, X

    Bai, H.; Zhu, Z. Z.; Zhan, X. Z.; Yang, M.; Li, G.; Ke, J. T.; Hu, C. Q.; Zhu, T.; Cai, J. W. Polarized Neutron Reflectometry Characterization of Perpendic- ular Magnetized Ho3Fe5O12 Films with Efficient Spin- Orbit Torque Induced Switching.Applied Physics Letters 2021,119, 212406

    work page 2021

  24. [24]

    C.; Ambaye, H.; Lauter, V.; Xiao, J

    Zhu, T.; Yang, Y.; Yu, R. C.; Ambaye, H.; Lauter, V.; Xiao, J. Q. The Study of Perpendicular Magnetic Anisotropy in CoFeB Sandwiched by MgO and Tanta- lum Layers Using Polarized Neutron Reflectometry.Ap- plied Physics Letters2012,100, 202406

    work page

  25. [25]

    Zhu, T. The Study of Perpendicular Magnetic Anisotropy in the Magnetic Sensors with Linear Sensitivity Using Po- larized Neutron Reflectometry.Journal of Physics: Con- ference Series2016,711, 12004

    work page

  26. [26]

    Origin of Perpendicular Magnetic Anisotropy in Ultra-Thin Metal Films Studied by in-Situ Neutron Reflectometry

    Kirichuk, G.; Grunin, A.; Dolgoborodov, A.; Prokopovich, P.; Shvets, P.; Vorobiev, A.; Devishvilli, A.; Goikhman, A.; Maksimova, K. Origin of Perpendicular Magnetic Anisotropy in Ultra-Thin Metal Films Studied by in-Situ Neutron Reflectometry. 2025

    work page 2025

  27. [27]

    S.; Lauter, V.; Allard, L

    Ji, N.; Osofsky, M. S.; Lauter, V.; Allard, L. F.; Li, X.; Jensen, K. L.; Ambaye, H.; Lara-Curzio, E.; Wang, J.- P. Perpendicular Magnetic Anisotropy and High Spin- Polarization Ratio in Epitaxial Fe-N Thin Films.Physical Review B2011,84, 245310

    work page

  28. [28]

    J.; Gester, M.; Bland, J

    Blundell, S. J.; Gester, M.; Bland, J. A. C.; Lauter, H. J.; Pasyuk, V. V.; Petrenko, A. V. Spin-Orientation Depen- dence in Neutron Reflection from a Single Magnetic Film. Physical Review B1995,51, 9395–9398

    work page

  29. [29]

    Fields, S. S. et al. Non-Altermagnetic Origin of Ex- change Bias Behaviors in Incoherent RuO2/Fe Bilayer Heterostructures.ACS Applied Materials & Interfaces 2026,

    work page 2026

  30. [30]

    Toperverg, B.; Nikonov, O.; Lauter-Pasyuk, V.; Lauter, H. J. Towards 3D Polarization Analysis in Neu- tron Reflectometry.Physica B: Condensed Matter2001, 297, 169–174

    work page

  31. [31]

    Lauter, H. J. C.; Lauter, V.; Toperverg, B. P. Reflectiv- ity, Off-Specular Scattering, and GI-SAS: Neutrons.in Polymer Science: A Comprehensive Reference (Elsevier, Amsterdam)2012, 411–432

    work page 2012

  32. [32]

    Resistance Minimum in Dilute Magnetic Al- loys.Progress of Theoretical Physics1964,32, 37–49

    Kondo, J. Resistance Minimum in Dilute Magnetic Al- loys.Progress of Theoretical Physics1964,32, 37–49

    work page

  33. [33]

    F.; Jones, H.Theory of the properties of metals and alloys; University Press: Oxford, 1958

    Mott, N. F.; Jones, H.Theory of the properties of metals and alloys; University Press: Oxford, 1958

    work page 1958

  34. [34]

    Finite-Temperature Conductiv- ity and Magnetoconductivity of Topological Insulators

    Lu, H.-Z.; Shen, S.-Q. Finite-Temperature Conductiv- ity and Magnetoconductivity of Topological Insulators. Physical Review Letters2014,112, 146601

    work page

  35. [35]

    I.; Nagaoka, Y

    Hikami, S.; Larkin, A. I.; Nagaoka, Y. Spin-Orbit Inter- action and Magnetoresistance in the Two Dimensional Random System.Progress of Theoretical Physics1980, 63, 707–710

    work page

  36. [36]

    M.; Vail, O

    Stephen, G. M.; Vail, O. A.; Lu, J.; Beck, W. A.; Tay- lor, P. J.; Friedman, A. L. Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films.Scientific Reports2020,10, 4845

    work page

  37. [37]

    J.; Gilbert, M

    de Coster, G. J.; Gilbert, M. J. Essential Design Criteria for Topological Electronics and Spintronics. 2021 IEEE International Electron Devices Meeting (IEDM). 2021; pp 38.3.1–38.3.4

    work page 2021

  38. [38]

    Chen, P. et al. Tailoring the Hybrid Anomalous Hall Response in Engineered Magnetic Topological Insulator Heterostructures.Nano Letters2020,20, 1731–1737

    work page

  39. [39]

    A.; Finley, J.; Samarth, N.; Liu, L

    Han, J.; Richardella, A.; Siddiqui, S. A.; Finley, J.; Samarth, N.; Liu, L. Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator. Physical Review Letters2017,119, 077702

    work page

  40. [40]

    A.; Che, X.; Huang, L.; Dai, B.; Wong, K.; Han, X.; Wang, K

    Wu, H.; Zhang, P.; Deng, P.; Lan, Q.; Pan, Q.; Razavi, S. A.; Che, X.; Huang, L.; Dai, B.; Wong, K.; Han, X.; Wang, K. L. Room-Temperature Spin-Orbit Torque from Topological Surface States.Physical Review Letters2019,123, 207205

    work page

  41. [41]

    Ye, C. et al. Nonreciprocal Transport in a Bilayer of MnBi2Te4 and Pt.Nano Letters2022,22, 1366–1373

    work page

  42. [42]

    Fan, Y. et al. Magnetization switching through giant spinorbit torque in a magnetically doped topological insulator heterostructure.Nature Materials2014,13, 699704

    work page

  43. [43]

    Highlights from the magnetism reflectometer at the SNS.Physica B: Condensed Matter2009,404, 2543–2546

    Lauter, V.; Ambaye, H.; Goyette, R.; Hal Lee, W.-T.; Parizzi, A. Highlights from the magnetism reflectometer at the SNS.Physica B: Condensed Matter2009,404, 2543–2546

    work page

  44. [44]

    G.; Ulyanov, V

    Syromyatnikov, V. G.; Ulyanov, V. A.; Lauter, V.; Pusenkov, V. M.; Ambaye, H.; Goyette, R.; Hoffmann, M.; Bulkin, A. P.; Kuznetsov, I. N.; Medvedev, E. N. A New Type of Wide-Angle Super- mirror Analyzer of Neutron Polarization.Journal of Physics: Conference Series2014,528, 012021

    work page

  45. [45]

    Y.; Tong, X.; Brown, D

    Jiang, C. Y.; Tong, X.; Brown, D. R.; Glavic, A.; Am- baye, H.; Goyette, R.; Hoffmann, M.; Parizzi, A. A.; Robertson, L.; Lauter, V. New generation high perfor- mance in situ polarized 3He system for time-of-flight 9 beam at spallation sources.Review of Scientific Instru- ments2017,88, 025111

    work page

  46. [46]

    Lauter-Pasyuk, V. V. Neutron Grazing Incidence Tech- niques for Nano-Science.Collection SFN2007,7, s221– s240

    work page