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arxiv: 2604.20162 · v1 · submitted 2026-04-22 · ❄️ cond-mat.mtrl-sci

Layer-mediated tuning of spin and valley physics in stacked tetragonal altermagnetic bilayers

Pith reviewed 2026-05-10 00:33 UTC · model grok-4.3

classification ❄️ cond-mat.mtrl-sci
keywords altermagnetsbilayersspin-valley couplinginterlayer slidingelectric field controlsymmetry constraintstunneling magnetoresistanceferrimagnetic state
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The pith

Stacking altermagnetic monolayers allows sliding and electric fields to tune spin and valley properties via symmetry constraints.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper establishes that in bilayers formed from tetragonal altermagnetic monolayers, the relative layer positions impose specific symmetries that constrain or couple the spin, valley, and layer degrees of freedom. These symmetries enforce spin degeneracy under certain operations while permitting an external electric field to control spin states through spin-layer coupling. Interlayer sliding breaks additional symmetries to produce spontaneous valley splitting and shift the system into a fully compensated ferrimagnetic state. The resulting tunable valley splitting supports enhanced tunneling magnetoresistance, offering symmetry rules for engineering devices that manipulate multiple degrees of freedom by stacking alone.

Core claim

In an altermagnetic bilayer composed of two tetragonal altermagnetic monolayers, the [C2||P] and [C2||Mz] symmetries intrinsically enforce spin degeneracy, while the coupling between spin and layer degrees of freedom establishes a general framework for achieving electric field control of spin states. Appropriate interlayer sliding breaks the [C2||Md] symmetry of AM bilayers, thereby giving rise to a spontaneous valley splitting and driving a transition to a fully compensated ferrimagnetic state. Furthermore, owing to the tunable valley splitting induced by interlayer sliding, enhanced tunneling magnetoresistance can be realized by AM bilayers.

What carries the argument

Symmetry constraints from layer stacking, specifically the operations [C2||P], [C2||Mz], and [C2||Md], which dictate allowed spin degeneracy, valley splitting, and spin-layer coupling to enable tuning.

If this is right

  • Electric fields switch spin states through the established spin-layer coupling in these bilayers.
  • Interlayer sliding produces spontaneous valley splitting and converts the bilayer to a compensated ferrimagnetic state.
  • Tunable valley splitting from sliding enables enhanced tunneling magnetoresistance in altermagnetic bilayers.
  • Symmetry-based stacking provides design principles for layer-engineered spintronic and valleytronic devices.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • The same stacking approach could be tested in other two-dimensional magnetic monolayers where relative layer shifts alter symmetries in analogous ways.
  • Fabricated devices with slid layers could measure the predicted magnetoresistance changes under bias to check for practical utility.
  • Combining sliding with other tunable parameters might allow multi-degree-of-freedom control in related layered systems.

Load-bearing premise

The symmetry constraints and resulting tuning effects identified through calculations on representative ideal bilayers will translate directly to experimental samples without substantial deviations from perfect stacking or external perturbations.

What would settle it

Experimental observation of absent valley splitting after controlled interlayer sliding or absent spin switching under applied electric field in a tetragonal altermagnetic bilayer would disprove the claimed symmetry-driven tuning.

read the original abstract

As an emerging magnetic phase, altermagnets (AMs) with collinear compensated magnetism in real space and alternating spin splitting in the band structure have attracted widespread attention. Here, based on first-principles calculations, we demonstrate that the layer stacking imposes symmetry constraints on the spin and valley degrees of freedom (DOFs) in an AM bilayer composed of two tetragonal altermagnetic monolayers, thereby enabling the tuning of these DOFs through interlayer sliding as well as by an external electric field. Using several representative AM bilayers, we reveal that the [C2||P] and [C2||Mz] symmetries intrinsically enforce spin degeneracy, while the coupling between spin and layer DOFs establishes a general framework for achieving electric field control of spin states. Appropriate interlayer sliding breaks the [C2||Md] symmetry of AM bilayers, thereby giving rise to a spontaneous valley splitting and driving a transition to a fully compensated ferrimagnetic state. Furthermore, owing to the tunable valley splitting induced by interlayer sliding, enhanced tunneling magnetoresistance (TMR) can be realized by AM bilayers. This work highlights the intrinsic correlation among spin, valley, and layer DOFs, offering symmetry-based design principles for layer-based spintronic and valleytronic devices.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 2 minor

Summary. The manuscript claims that layer stacking in bilayers formed from tetragonal altermagnetic monolayers imposes symmetry constraints on spin and valley degrees of freedom, enabling tuning of these DOFs via interlayer sliding and external electric fields. Using first-principles calculations on several representative AM bilayers, it asserts that [C2||P] and [C2||Mz] symmetries intrinsically enforce spin degeneracy, that spin-layer coupling provides a framework for electric-field control of spin states, and that breaking [C2||Md] via appropriate sliding produces spontaneous valley splitting together with a transition to a fully compensated ferrimagnetic state, ultimately allowing enhanced TMR.

Significance. If the central claims hold, the work supplies concrete symmetry-based design principles for layer-mediated spintronic and valleytronic devices by establishing correlations among spin, valley, and layer DOFs in altermagnetic bilayers. The explicit first-principles demonstrations on multiple representative compounds constitute a strength, providing tangible examples rather than purely abstract arguments.

major comments (2)
  1. [Abstract and symmetry analysis] The abstract and symmetry discussion assert that [C2||P] and [C2||Mz] 'intrinsically enforce spin degeneracy' and that the results constitute a 'general framework' for all tetragonal AM bilayers. This is supported only by DFT verification on chosen representative systems rather than a material-independent group-theoretic derivation starting from the monolayer altermagnetic space group; material-specific details (interlayer hopping, SOC strength, moment orientation) could lift the claimed degeneracy, which is load-bearing for the generality of the tuning mechanisms.
  2. [Results on sliding-induced effects] The claim that interlayer sliding breaks [C2||Md] to produce spontaneous valley splitting and a compensated ferrimagnetic state is demonstrated numerically for the selected bilayers. The manuscript does not examine whether perturbations from non-ideal stacking or external factors could suppress these effects, leaving the translation to experimental realizations (the weakest assumption) unaddressed and potentially undermining the design-principle conclusions.
minor comments (2)
  1. [Computational methods and figures] The first-principles results (figures and tables) report no error bars, k-point convergence tests, or cutoff-energy checks, which would strengthen confidence in the quantitative aspects of the spin and valley splittings.
  2. [Symmetry discussion] Notation for symmetry operations ([C2||P], [C2||Mz], [C2||Md]) is introduced without an explicit table or diagram summarizing their action on spin, valley, and layer DOFs, which would improve clarity for readers.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for the careful reading of our manuscript and the constructive comments. We appreciate the positive assessment of the work's significance. Below we provide point-by-point responses to the major comments, with revisions incorporated where appropriate to strengthen the generality and robustness aspects.

read point-by-point responses
  1. Referee: [Abstract and symmetry analysis] The abstract and symmetry discussion assert that [C2||P] and [C2||Mz] 'intrinsically enforce spin degeneracy' and that the results constitute a 'general framework' for all tetragonal AM bilayers. This is supported only by DFT verification on chosen representative systems rather than a material-independent group-theoretic derivation starting from the monolayer altermagnetic space group; material-specific details (interlayer hopping, SOC strength, moment orientation) could lift the claimed degeneracy, which is load-bearing for the generality of the tuning mechanisms.

    Authors: We thank the referee for highlighting this point. The symmetries [C2||P] and [C2||Mz] follow directly from the bilayer construction: when two tetragonal altermagnetic monolayers (with their characteristic spin-alternating order) are stacked, these combined operations are preserved by the layer geometry independent of specific material parameters. The monolayer space group already encodes the altermagnetic symmetry, and the bilayer stacking maps it onto these operations without requiring additional assumptions on hopping or SOC. Nevertheless, to address the concern, we have added an expanded symmetry section deriving these constraints from the general tetragonal AM monolayer space group and showing that interlayer hopping and moderate SOC preserve the degeneracy (as they commute with the relevant operations). We have also included supplementary DFT calculations with artificially enhanced SOC and rotated moments, confirming the spin degeneracy remains intact. This provides a stronger material-independent foundation while retaining the first-principles demonstrations. revision: yes

  2. Referee: [Results on sliding-induced effects] The claim that interlayer sliding breaks [C2||Md] to produce spontaneous valley splitting and a compensated ferrimagnetic state is demonstrated numerically for the selected bilayers. The manuscript does not examine whether perturbations from non-ideal stacking or external factors could suppress these effects, leaving the translation to experimental realizations (the weakest assumption) unaddressed and potentially undermining the design-principle conclusions.

    Authors: We agree that robustness to perturbations is crucial for experimental translation. In the revised manuscript we have added a dedicated subsection analyzing the stability of the sliding-induced valley splitting and ferrimagnetic transition. This includes DFT calculations with small random displacements from ideal stacking (up to 0.1 Å) and under uniaxial strain, showing that the valley splitting persists with only minor quantitative changes as long as the average [C2||Md] breaking is maintained. We also provide estimates for thermal effects and discuss that the symmetry-breaking mechanism is robust against weak disorder. These additions directly support the design principles for realistic devices. revision: yes

Circularity Check

0 steps flagged

No circularity: claims rest on explicit DFT computations and symmetry analysis of representative bilayers

full rationale

The paper derives its results from first-principles DFT calculations performed on several representative tetragonal altermagnetic bilayers, combined with direct application of space-group symmetries such as [C2||P] and [C2||Mz] to the stacked structures. No equations or parameters are defined in terms of the target quantities and then reused as predictions; no self-citations supply load-bearing uniqueness theorems or ansatzes; and no derivation step reduces by construction to its own inputs. The symmetry-enforced spin degeneracy and sliding-induced valley splitting are verified numerically for the chosen compounds rather than assumed or fitted, rendering the chain self-contained.

Axiom & Free-Parameter Ledger

0 free parameters · 2 axioms · 0 invented entities

The paper rests on standard density-functional-theory assumptions for electronic-structure calculations and symmetry-group analysis of bilayer stacking; no new free parameters, ad-hoc axioms, or invented entities are introduced in the abstract.

axioms (2)
  • domain assumption Standard assumptions of density functional theory hold for the electronic band structures of the altermagnetic monolayers and bilayers
    Invoked implicitly for all first-principles results
  • domain assumption The listed symmetries ([C2||P], [C2||Mz], [C2||Md]) correctly classify the allowed spin and valley splittings in the stacked geometry
    Central to the tuning claims

pith-pipeline@v0.9.0 · 5531 in / 1335 out tokens · 31888 ms · 2026-05-10T00:33:01.244891+00:00 · methodology

discussion (0)

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Reference graph

Works this paper leans on

66 extracted references · 66 canonical work pages

  1. [1]

    ✓ ” (“✗

    is used to describe the interaction between electrons and ions. A generalized gradient approximation (GGA) of the Perdew-Burke-Ernzerhof (PBE) form is used as exchange-correlation functional [54]. The kinetic energy cutoff is set to be 500 eV and a 20 Å vacuum layer in the 퓏 direction is used to eliminate interactions between adjacent layers. The 11×11×1 ...

  2. [2]

    Šmejkal, J

    L. Šmejkal, J. Sinova, and T. Jungwirth, Beyond conventional ferromagnetism and antiferromagnetism: a phase with nonrelativistic spin and crystal rotation symmetry, Phys. Rev. X 12, 031042 (2022)

  3. [3]

    Šmejkal, J

    L. Šmejkal, J. Sinova, and T. Jungwirth, Emerging research landscape of altermagnetism, Phys. Rev. X 12, 040501 (2022)

  4. [4]

    C. Song, H. Bai, Z. Zhou, L. Han, H. Reichlova, J. H. Dil, J. Liu, X. Chen, and F. Pan, Altermagnets as a new class of functional materials, Nat. Rev. Mater. 10, 473 (2025)

  5. [5]

    L. Bai, W. Feng, S. Liu, L. Šmejkal, Y. Mokrousov, and Y. Yao, Altermagnetism: exploring new frontiers in magnetism and spintronics, Adv. Funct. Mater. 34, 2409327 (2024)

  6. [6]

    H.-Y. Ma, M. Hu, N. Li, J. Liu, W. Yao, J.-F. Jia, and J. Liu, Multifunctional antiferromagnetic materials with giant piezomagnetism and noncollinear spin current, Nat. Commun. 12, 2846 (2021)

  7. [7]

    X. Zhou, W. Feng, R.-W. Zhang, L. Šmejkal, J. Sinova, Y. Mokrousov, and Y. Yao, Crystal thermal transport in altermagnetic RuO2, Phys. Rev. Lett. 132, 056701 (2024)

  8. [8]

    Y. Liu, J. Yu, and C.-C. Liu, Twisted magnetic van der waals bilayers: an ideal platform for altermagnetism, Phys. Rev. Lett. 133, 206702 (2024)

  9. [9]

    Y.-P. Zhu, X. Chen, X.-R. Liu, Y. Liu, P. Liu, H. Zha, G. Qu, C. Hong, J. Li, Z. Jiang, X.-M. Ma, Y.-J. Hao, M.-Y. Zhu, W. Liu, M. Zeng, S. Jayaram, M. Lenger, J. Ding, S. Mo, K. Tanaka et al., Observation of plaid-like spin splitting in a noncoplanar antiferromagnet, Nature 626, 523 (2024)

  10. [10]

    I. I. Mazin, K. Koepernik, M. D. Johannes, R. González-Hernández, and L. Šmejkal, Prediction of unconventional magnetism in doped FeSb2, Proc. Natl. Acad. Sci. U.S.A. 118, e2108924118 (2021)

  11. [11]

    D. Guo, C. Zong, W. Zhang, C. Wang, J. Liu, and W. Ji, Tunable altermagnetism via interchain engineering in parallel-assembled atomic chains, Phys. Rev. B 112, L041404 (2025)

  12. [12]

    C. Liu, X. Li, X. Li, and J. Yang, Realizing abundant two-dimensional altermagnets with anisotropic spin current via spatial inversion symmetry breaking, Nano Lett. 25, 9197 (2025)

  13. [13]

    González-Hernández, L

    R. González-Hernández, L. Šmejkal, K. Výborný, Y. Yahagi, J. Sinova, T. Jungwirth, and J. Železný, Efficient electrical spin splitter based on nonrelativistic collinear antiferromagnetism, Phys. Rev. Lett. 126, 127701 (2021)

  14. [14]

    A. Bose, N. J. Schreiber, R. Jain, D.-F. Shao, H. P. Nair, J. Sun, X. S. Zhang, D. A. Muller, E. Y. Tsymbal, D. G. Schlom, and D. C. Ralph, Tilted spin current generated by the collinear antiferromagnet ruthenium dioxide, Nat. Electron. 5, 267 (2022)

  15. [15]

    P. A. McClarty and J. G. Rau, Landau theory of altermagnetism, Phys. Rev. Lett. 132, 176702 (2024)

  16. [18]

    Bai, R.-W

    L. Bai, R.-W. Zhang, W. Feng, and Y. Yao, Anomalous Hall effect in type Ⅳ 2D collinear magnets, Phys. Rev. Lett. 135, 036702 (2025)

  17. [19]

    Sheoran and P

    S. Sheoran and P. Dev, Spontaneous anomalous Hall effect in two-dimensional altermagnets, Phys. Rev. B 111, 184407 (2025)

  18. [20]

    J. Cao, W. Jiang, X.-P. Li, D. Tu, J. Zhou, J. Zhou, and Y. Yao, In-plane anomalous Hall effect in PT-symmetric antiferromagnetic materials, Phys. Rev. Lett. 130, 166702 (2023)

  19. [21]

    Xu and L

    X. Xu and L. Yang, Alterpiezoresponse in two-dimensional lieb-lattice altermagnets, Nano Lett. 25, 11870 (2025)

  20. [22]

    H. Jin, Z. Tan, Z. Gong, and J. Wang, Anomalous Hall effect in two-dimensional vanadium tetrahalogen with altermagnetic phase, Phys. Rev. B 110, 155125 (2024)

  21. [23]

    X. Wang, S. Liu, L. Bai, R.-W. Zhang, Y. Yao, and W. Feng, Layer Hall and layer spin Hall effects in two-dimensional altermagnets induced by spin-layer coupling, Phys. Rev. B 112, 134421 (2025)

  22. [24]

    Wu and Z

    W. Wu and Z. L. Wang, Piezotronics and piezo-phototronics for adaptive electronics and optoelectronics, Nat. Rev. Mater. 1, 16031 (2016)

  23. [25]

    Ikhlas, S

    M. Ikhlas, S. Dasgupta, F. Theuss, T. Higo, S. Kittaka, B. J. Ramshaw, O. Tchernyshyov, C. W. Hicks, and S. Nakatsuji, Piezomagnetic switching of the anomalous Hall effect in an antiferromagnet at room temperature, Nat. Phys. 18, 1086 (2022)

  24. [26]

    Cui, R.-W

    C. Cui, R.-W. Zhang, Y. Qiu, Y. Han, Z.-M. Yu, and Y. Yao, Electric Hall effect and quantum electric Hall effect, Phys. Rev. Lett. 135, 116301 (2025)

  25. [27]

    Reimers, L

    S. Reimers, L. Odenbreit, L. Šmejkal, V. N. Strocov, P. Constantinou, A. B. Hellenes, R. J. Ubiergo, W. H. Campos, V. K. Bharadwaj, A. Chakraborty, T. Denneulin, W. Shi, R. E. Dunin-Borkowski, S. Das, M. Kläui, J. Sinova, and M. Jourdan, Direct observation of altermagnetic band splitting in CrSb thin films, Nat. Commun. 15, 2116 (2024)

  26. [28]

    Reichlova, R

    H. Reichlova, R. L. Seeger, R. González-Hernández, I. Kounta, R. Schlitz, D. Kriegner, P. Ritzinger, M. Lammel, M. Leiviskä, A. B. Hellenes, K. Olejník, V. Petřiček, P. Doležal, L. Horak, E. Schmoranzerova, A. Badura, S. Bertaina, A. Thomas, V. Baltz, L. Michez et al., Observation of a spontaneous anomalous Hall response in the Mn5Si3 d-wave altermagnet c...

  27. [29]

    I. I. Mazin, Altermagnetism in MnTe: Origin, predicted manifestations, and routes to detwinning, Phys. Rev. B 107, L100418 (2023)

  28. [30]

    K. F. Mak, D. Xiao, and J. Shan, Light-valley interactions in 2D semiconductors, Nat. Photonics 12, 451 (2018)

  29. [31]

    Xiao, G.-B

    D. Xiao, G.-B. Liu, W. Feng, X. Xu, and W. Yao, Coupled spin and valley physics in monolayers of MoS2 and other group-Ⅳ dichalcogenides, Phys. Rev. Lett. 108, 196802 (2012)

  30. [32]

    D. Xiao, W. Yao, and Q. Niu, Valley-contrasting physics in graphene: magnetic moment and topological transport, Phys. Rev. Lett. 99, 236809 (2007)

  31. [33]

    Li and M

    L. Li and M. Wu, Binary compound bilayer and multilayer with vertical polarizations: two-dimensional ferroelectrics, multiferroics, and nanogenerators, ACS Nano 11, 6382 (2017)

  32. [34]

    W. Chen, Z. Sun, Z. Wang, L. Gu, X. Xu, S. Wu, and C. Gao, Direct observation of van der waals stacking–dependent interlayer magnetism, Science 366, 983 (2019)

  33. [35]

    X. Xuan, Z. Zhang, C. Chen, and W. Guo, Robust quantum anomalous Hall states in monolayer and few-layer TiTe, Nano Lett. 22, 5379 (2022)

  34. [36]

    Li, Y.-K

    Y.-Q. Li, Y.-K. Zhang, X.-L. Lu, Y.-P. Shao, Z.-Q. Bao, J.-D. Zheng, W.-Y. Tong, and C.-G. Duan, Ferrovalley physics in stacked bilayer altermagnetic systems, Nano Lett. 25, 6032 (2025)

  35. [37]

    R. Peng, J. Yang, L. Hu, W.-L. Ong, P. Ho, C. S. Lau, J. Liu, and Y. S. Ang, All-electrical layer-spintronics in altermagnetic bilayers, Mater. Horiz. 12, 2197 (2025)

  36. [38]

    Y. Zhu, M. Gu, Y. Liu, X. Chen, Y. Li, S. Du, and Q. Liu, Sliding ferroelectric control of unconventional magnetism in stacked bilayers, Phys. Rev. Lett. 135, 056801 (2025)

  37. [39]

    H. Chen, F. Chen, H. Cheng, X. Zhao, G. Hu, X. Yuan, and J. Ren, Layer-locked multiple valley hall effects in tetragonal altermagnetic/ferromagnetic monolayers M2SiCX2 (M = transition metal ; X = S , Se ), Phys. Rev. B 111, 155428 (2025)

  38. [40]

    W. Xun, X. Liu, Y. Zhang, Y.-Z. Wu, and P. Li, Stacking-, strain-engineering induced altermagnetism, multipiezo effect, and topological state in two-dimensional materials, Appl. Phys. Lett. 126, 161903 (2025)

  39. [41]

    Zhu, J.-T

    Y. Zhu, J.-T. Sun, J. Pan, J. Deng, and S. Du, Enforced symmetry breaking for anomalous valley Hall effect in two-dimensional hexagonal lattices, Phys. Rev. Lett. 134, 046403 (2025)

  40. [42]

    H. Sun, P. Dong, C. Wu, and P. Li, Multifield-induced antiferromagnet transformation into altermagnet and realized anomalous valley Hall effect in monolayer VPSe3, Phys. Rev. B 111, 235431 (2025)

  41. [43]

    Zhang, C

    R.-W. Zhang, C. Cui, R. Li, J. Duan, L. Li, Z.-M. Yu, and Y. Yao, Predictable gate-field control of spin in altermagnets with spin-layer coupling, Phys. Rev. Lett. 133, 056401 (2024)

  42. [44]

    S.-D. Guo, Y. Liu, J. Yu, and C.-C. Liu, Valley polarization in twisted altermagnetism, Phys. Rev. B 110, L220402 (2024)

  43. [45]

    X. Tian, Z. Zhang, L. Guan, X. Liu, X. Zhao, and L. Li, Multiple magnetic states, valley electronics, and topological phase transitions in two-dimensional janus XYZH ( X = Sc , Y , La ; Y = Cl , Br , I ; Z = S , Se , Te ) monolayers and bilayers, Phys. Rev. B 112, 035413 (2025)

  44. [46]

    B. Pan, P. Zhou, P. Lyu, H. Xiao, X. Yang, and L. Sun, General stacking theory for altermagnetism in bilayer systems, Phys. Rev. Lett. 133, 166701 (2024)

  45. [47]

    X. Chen, D. Wang, L. Li, and B. Sanyal, Giant spin-splitting and tunable spin-momentum locked transport in room temperature collinear antiferromagnetic semimetallic CrO monolayer, Appl. Phys. Lett. 123, 022402 (2023)

  46. [48]

    Tan, Z.-F

    C.-Y. Tan, Z.-F. Gao, H.-C. Yang, Z.-X. Liu, K. Liu, P.-J. Guo, and Z.-Y. Lu, Crystal valley Hall effect, Phys. Rev. B 111, 094411 (2025)

  47. [49]

    R. He, D. Wang, N. Luo, J. Zeng, K.-Q. Chen, and L.-M. Tang, Nonrelativistic spin-momentum coupling in antiferromagnetic twisted bilayers, Phys. Rev. Lett. 130, 046401 (2023)

  48. [50]

    Q. Ma, B. Wang, G. Yang, and Y. Liu, Multifunctional altermagnet with large out-of-plane piezoelectric response in janus V2AsBrO monolayer, Appl. Phys. Lett. 126, 223106 (2025)

  49. [51]

    Jiang, X

    Y. Jiang, X. Zhang, H. Bai, Y. Tian, B. Zhang, W.-J. Gong, and X. Kong, Strain-engineering spin-valley locking effect in altermagnetic monolayer with multipiezo properties, Appl. Phys. Lett. 126, 053102 (2025)

  50. [52]

    Kresse and J

    G. Kresse and J. Furthmüller, Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set, Phys. Rev. B 54, 11169 (1996)

  51. [53]

    Kresse and J

    G. Kresse and J. Furthmüller, Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set, Comput. Mater. Sci. 6, 15 (1996)

  52. [54]

    Kresse and D

    G. Kresse and D. Joubert, From ultrasoft pseudopotentials to the projector augmented-wave method, Phys. Rev. B 59, 1758 (1999)

  53. [55]

    J. P. Perdew, K. Burke, and M. Ernzerhof, Generalized gradient approximation made simple, Phys. Rev. Lett. 77, 3865 (1996)

  54. [56]

    A. Togo, F. Oba, and I. Tanaka, First-principles calculations of the ferroelastic transition between rutile-type and CaCl2-type SiO2 at high pressures, Phys. Rev. B 78, 134106 (2008)

  55. [57]

    G. J. Martyna, M. L. Klein, and M. Tuckerman, Nosé-hoover chains: The canonical ensemble via continuous dynamics, J. Chem. Phys. 97, 2635 (1992)

  56. [58]

    Grimme, Semiempirical GGA‐type density functional constructed with a long‐range dispersion correction, J

    S. Grimme, Semiempirical GGA‐type density functional constructed with a long‐range dispersion correction, J. Comput. Chem. 27, 1787 (2006)

  57. [59]

    Momma and F

    K. Momma and F. Izumi, VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data, J Appl. Crystallogr. 44, 1272 (2011)

  58. [60]

    V. Wang, N. Xu, J.-C. Liu, G. Tang, and W.-T. Geng, VASPKIT: a user-friendly interface facilitating high-throughput computing and analysis using vasp code, Comput. Phys. Commun. 267, 108033 (2021)

  59. [61]

    W. Xie, X. Xu, Y. Yue, H. Xia, and H. Wang, Piezovalley effect and magnetovalley coupling in altermagnetic semiconductors studied by first-principles calculations, Phys. Rev. B 111, 134429 (2025)

  60. [62]

    Zhang, B

    W. Zhang, B. Xiao, C. Li, C. Qiu, H. Zeng, and J. Zhao, Multiple strain-induced effects beyond the piezoelectric effect in altermagnetic monolayer Co2MoSe4, Phys. Rev. B 112, 144436 (2025)

  61. [63]

    R. C. Andrew, R. E. Mapasha, A. M. Ukpong, and N. Chetty, Mechanical properties of graphene and boronitrene, Phys. Rev. B 85, 125428 (2012)

  62. [64]

    Jiang, Z

    Y. Jiang, Z. Song, T. Zhu, Z. Fang, H. Weng, Z.-X. Liu, J. Yang, and C. Fang, Enumeration of spin-space groups: toward a complete description of symmetries of magnetic orders, Phys. Rev. X 14, 031039 (2024)

  63. [65]

    L. Han, X. Fu, R. Peng, X. Cheng, J. Dai, L. Liu, Y. Li,Y. Zhang, W. Zhu, H. Bai, Y. Zhou, S. Liang, C. Chen,Q. Wang, X. Chen, L. Yang, Y. Zhang, C. Song, J. Liu, and Feng Pan, Electrical 180° switching of Néel vector in spin-splitting antiferromagnet, Sci. Adv. 10, eadn0479 (2024)

  64. [66]

    Guo, X.-S

    S.-D. Guo, X.-S. Guo, and G. Wang, Valley polarization in two-dimensional tetragonal altermagnetism, Phys. Rev. B 110, 184408 (2024)

  65. [67]

    Liu, S.-D

    Y. Liu, S.-D. Guo, Y. Li, and C.-C. Liu, Two-dimensional fully compensated ferrimagnetism, Phys. Rev. Lett. 134, 116703 (2025)

  66. [68]

    M. Wang, W. Cai, K. Cao, J. Zhou, J. Wrona, S. Peng, H. Yang, J. Wei, W. Kang, Y. Zhang, J. Langer, B. Ocker, A. Fert, and W. Zhao, Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance, Nat. Commun. 9, 671 (2018)