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arxiv: 2605.22180 · v1 · pith:HNKV3EZMnew · submitted 2026-05-21 · ❄️ cond-mat.mes-hall

Topologically Driven Giant Effective Spin Mixing Conductance in Antiferromagnetic FeSn/Py Heterostructures

Kacho Imtiyaz Ali Khan , Nidhi Kandwal , Pankhuri Gupta , Deeksha Khandelwal , Akash Kumar , Johan {\AA}kerman , Pranaba Kishor Muduli This is my paper

Pith reviewed 2026-05-22 04:26 UTC · model grok-4.3

classification ❄️ cond-mat.mes-hall
keywords spin pumpingFeSnkagome latticeantiferromagnetic heterostructuresspin mixing conductanceinverse spin Hall effecttopological semimetalspintronics
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0 comments X

The pith

The topologically active [001]-kagome surface of epitaxial FeSn produces a giant effective spin mixing conductance of 116 nm^{-2} when interfaced with Py, nearly ten times larger than in Pt/Py stacks.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

This paper investigates spin pumping across the interface between the antiferromagnetic topological semimetal FeSn and permalloy films. It measures an effective spin mixing conductance nearly an order of magnitude higher than the value obtained with platinum, the conventional benchmark. The authors tie the enhancement to direct contact with the topological surface states of the kagome lattice in oriented FeSn. They support the interfacial mechanism by showing that a thin aluminum spacer cuts the damping change in half and that the inverse spin Hall voltage rises by roughly ten times. A sympathetic reader would see this as evidence that topological surfaces can greatly improve spin current transfer at material boundaries.

Core claim

In epitaxial FeSn/Py heterostructures the direct interfacing of the Py layer with the topologically active [001]-kagome surface of FeSn yields an effective spin mixing conductance of (116 ± 7) nm^{-2}. This value exceeds that of standard Pt/Py heterostructures by nearly one order of magnitude. The same stacks exhibit an order-of-magnitude larger inverse spin Hall effect voltage, while insertion of a 3 nm Al spacer layer produces a twofold reduction in effective damping, confirming the interfacial origin of the large conductance.

What carries the argument

The topologically active [001]-kagome surface of epitaxial FeSn, which enables strong interfacial spin pumping when placed in direct contact with Py.

If this is right

  • The effective spin mixing conductance reaches (116 ± 7) nm^{-2} at the FeSn/Py interface.
  • A 3 nm Al spacer layer halves the damping enhancement, verifying its interfacial character.
  • Inverse spin Hall effect voltage increases by an order of magnitude relative to Pt/Py references.
  • Topologically active antiferromagnetic interfaces can serve as efficient spin-current injectors in quantum-material spintronic devices.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Comparable conductance enhancements may appear in other kagome-lattice antiferromagnets provided their surfaces retain topological character.
  • Device fabrication could benefit from prioritizing epitaxial growth conditions that preserve clean topological interfaces.
  • Thickness-dependent measurements on FeSn could further isolate surface contributions from any residual bulk effects.

Load-bearing premise

The damping increase and ISHE voltage arise solely from interfacial spin pumping enabled by the topologically active [001]-kagome surface of epitaxial FeSn, rather than from bulk spin-orbit effects, defects, or measurement artifacts.

What would settle it

The giant conductance value would be falsified if it vanished in FeSn/Py stacks grown without [001] epitaxial orientation or with the kagome surface disrupted while defects and bulk effects remained unchanged.

Figures

Figures reproduced from arXiv: 2605.22180 by Akash Kumar, Deeksha Khandelwal, Johan {\AA}kerman, Kacho Imtiyaz Ali Khan, Nidhi Kandwal, Pankhuri Gupta, Pranaba Kishor Muduli.

Figure 1
Figure 1. Figure 1: (a) Schematic illustration of kagome side-view and top-view of the FeSn crystal struc [PITH_FULL_IMAGE:figures/full_fig_p004_1.png] view at source ↗
Figure 2
Figure 2. Figure 2: Thickness-dependent ferromagnetic resonance (FMR) spectra measured at [PITH_FULL_IMAGE:figures/full_fig_p005_2.png] view at source ↗
Figure 3
Figure 3. Figure 3: (a) shows the extracted values of Meff plotted as a function of t −1 for FeSn/Py(t nm) films. The plot was fitted using the expression; Meff = MS + 2KS µ0MS × t −1 , (3) Here, µ0 is the permeability constant of free space. MS, and KS are the saturation magnetization and surface anisotropy constant, respectively. For the FeSn/Py film, we found the value of MS = (869 ± 26) emu/cc and KS = (1.03 ± 0.01) erg/c… view at source ↗
Figure 4
Figure 4. Figure 4: (a) FMR linewidth ∆H versus f for increasing Al spacer for FeSn/Al(t nm)/Py(10 nm) trilayer heterostructures; solid lines are fit to the curve using Eqn. (2). (b) Extracted αeff as a function of Al spacer thickness. 7 [PITH_FULL_IMAGE:figures/full_fig_p007_4.png] view at source ↗
Figure 5
Figure 5. Figure 5: Inverse spin Hall effect (ISHE) spectra measured at [PITH_FULL_IMAGE:figures/full_fig_p008_5.png] view at source ↗
read the original abstract

The topological semimetal FeSn antiferromagnet, characterized by its kagome lattice, two-dimensional flat bands, and Dirac-like surface states, holds immense promise for spintronic applications. In this work, for the first time, we investigate the spin pumping behavior in epitaxial-FeSn/Py (Ni$_{80}$Fe$_{20}$) heterostructures. We report a giant effective spin mixing conductance (g$^{\uparrow \downarrow}_{\mathrm{eff}}$) of $(116\pm 7)$~nm$^{-2}$, which is nearly one order of magnitude higher than that of standard Pt/Py heterostructures. The insertion of a 3 nm Al spacer layer results in a two-fold reduction in the effective damping, confirming the interfacial origin of the large g$^{\uparrow\downarrow}_{\mathrm{eff}}$. Consistently, we observe an order-of-magnitude higher inverse spin Hall effect voltage in the FeSn/Py system compared to a reference Pt/Py film stack. We attribute the giant g$^{\uparrow\downarrow}_{\mathrm{eff}}$ to the direct interfacing of the Py layer with the topologically active [001]-kagome surface of epitaxial-FeSn. These findings establish the critical role of topologically active interfaces for advanced quantum-material-based spintronic devices.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 2 minor

Summary. The manuscript reports experimental measurements of spin pumping in epitaxial antiferromagnetic FeSn/Py heterostructures, claiming a giant effective spin mixing conductance g↑↓_eff = (116 ± 7) nm^{-2} extracted from enhanced Gilbert damping and inverse spin Hall effect (ISHE) voltage. This value is stated to be nearly an order of magnitude larger than in standard Pt/Py stacks. An Al spacer layer is used to demonstrate the interfacial nature of the effect, and the enhancement is attributed to direct contact with the topologically active [001]-kagome surface of FeSn.

Significance. If the central attribution holds after additional controls, the result would establish a clear experimental link between kagome-lattice topology and enhanced interfacial spin mixing conductance, providing a concrete platform for topology-enhanced spin current generation in antiferromagnetic heterostructures. The consistent observation of both damping increase and order-of-magnitude larger ISHE voltage, together with the Al-spacer control, supplies falsifiable, quantitative data that could guide further device-oriented work in quantum-material spintronics.

major comments (2)
  1. [Results / Al spacer control] The Al-spacer experiment shows only a two-fold reduction in effective damping rather than restoration to the bare-Py value. This leaves open the possibility that residual intermixing, strain, or defect scattering contributes to both the observed Δα and the ISHE voltage, weakening the exclusive attribution to the topologically protected [001] surface. (See the paragraph describing the 3 nm Al spacer results and the associated damping comparison.)
  2. [Methods / Sample characterization] No FeSn thickness series, no comparison to polycrystalline FeSn, and no data for differently oriented epitaxial films are presented. Without these controls it remains unclear whether the factor-of-~10 enhancement in g↑↓_eff is specifically tied to the [001]-kagome surface states or arises from generic interface quality. This is load-bearing for the topological claim. (See the discussion of sample preparation and the attribution paragraph.)
minor comments (2)
  1. [Figure 2 / damping analysis] The FMR linewidth analysis should explicitly state whether the increase is purely Gilbert or contains two-magnon or inhomogeneous broadening contributions; a simple Δα extraction assumes the former.
  2. [Introduction] A reference to prior spin-pumping studies on other kagome or Dirac semimetal interfaces would help place the magnitude of g↑↓_eff in context.

Simulated Author's Rebuttal

2 responses · 1 unresolved

We thank the referee for the thorough review and valuable suggestions. We have revised the manuscript to provide a more nuanced interpretation of the Al spacer results and to explicitly acknowledge limitations in the control experiments. Our responses to the major comments are detailed below.

read point-by-point responses

  1. Referee: [Results / Al spacer control] The Al-spacer experiment shows only a two-fold reduction in effective damping rather than restoration to the bare-Py value. This leaves open the possibility that residual intermixing, strain, or defect scattering contributes to both the observed Δα and the ISHE voltage, weakening the exclusive attribution to the topologically protected [001] surface. (See the paragraph describing the 3 nm Al spacer results and the associated damping comparison.)

    Authors: We agree that the effective damping with the 3 nm Al spacer is reduced by approximately a factor of two but does not fully recover to the value measured for bare Py. This indicates that while the dominant contribution to the enhanced damping and large g↑↓_eff is interfacial, secondary effects such as minor intermixing or strain cannot be entirely ruled out. The accompanying strong suppression of the ISHE voltage with the spacer layer nevertheless supports that the primary spin-current generation occurs at the FeSn/Py interface. We have revised the relevant paragraph in the results section to clarify this distinction and to avoid an overly exclusive attribution to the topological surface states alone. revision: partial

  2. Referee: [Methods / Sample characterization] No FeSn thickness series, no comparison to polycrystalline FeSn, and no data for differently oriented epitaxial films are presented. Without these controls it remains unclear whether the factor-of-~10 enhancement in g↑↓_eff is specifically tied to the [001]-kagome surface states or arises from generic interface quality. This is load-bearing for the topological claim. (See the discussion of sample preparation and the attribution paragraph.)

    Authors: We concur that a systematic FeSn thickness series, direct comparison with polycrystalline FeSn, and measurements on differently oriented epitaxial films would strengthen the case that the enhancement is uniquely tied to the topologically active [001]-kagome surface. Such additional controls are not available in the present dataset because achieving comparable interface quality in those alternative configurations presents significant growth challenges. We have updated the discussion section to acknowledge this limitation explicitly while retaining the attribution based on the known presence of Dirac-like surface states on the epitaxial [001] surface and the magnitude of the observed effect relative to conventional metallic interfaces. revision: partial

standing simulated objections not resolved
  • Absence of FeSn thickness series, polycrystalline FeSn comparison, and data from differently oriented epitaxial films to isolate the role of the [001]-kagome surface

Circularity Check

0 steps flagged

No circularity: experimental g_eff extracted via standard spin-pumping formulas

full rationale

The paper is an experimental study reporting measured damping enhancement and ISHE voltage in epitaxial FeSn/Py stacks. The central quantity g↑↓eff is obtained from the observed Δα using the established relation g_eff = (4π M_s t_Py / g μ_B) Δα together with direct voltage measurements; these are standard external formulas, not derived or fitted within the paper itself. No self-definitional loops, fitted inputs renamed as predictions, or load-bearing self-citations appear in the reported chain. The topological attribution is an interpretive conclusion drawn after the measurements, not a mathematical reduction that forces the result by construction. The work is therefore self-contained against external benchmarks.

Axiom & Free-Parameter Ledger

0 free parameters · 0 axioms · 0 invented entities

The central claim rests on standard spin-pumping and inverse-spin-Hall models applied to measured damping and voltage; no new free parameters, axioms, or invented entities are introduced beyond the assumption that the interface is topologically active.

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Reference graph

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