Tuning a Resonance in the Fock Space: Optimization of Phonon Emission in a Resonant Tunneling Device

Phonon-assisted tunneling in a double barrier resonant tunneling device can be seen as a resonance in the electron-phonon Fock space which is tuned by the applied voltage. We show that the geometrical parameters can induce a symmetry condition in this space that can strongly enhance the emission of longitudinal optical phonons. For devices with thin emitter barriers this is achieved by a wider collector's barrier.