Role of doped layers in dephasing of 2D electrons in quantum well structures

A. A. Birukov; A. A. Sherstobitov; A. V. Germanenko; B. N. Zvonkov; E. A. Uskova; G. M. Minkov; O. E. Rut

arxiv: cond-mat/0106045 · v1 · submitted 2001-06-04 · ❄️ cond-mat.soft

Role of doped layers in dephasing of 2D electrons in quantum well structures

G. M. Minkov , A. V. Germanenko , O. E. Rut , A. A. Sherstobitov , B. N. Zvonkov , E. A. Uskova , A. A. Birukov This is my paper

classification ❄️ cond-mat.soft

keywords breakingphasequantumtimewelldopedlayerstemperature

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The temperature and gate voltage dependences of the phase breaking time are studied experimentally in GaAs/InGaAs heterostructures with single quantum well. It is shown that appearance of states at the Fermi energy in the doped layers leads to a significant decrease of the phase breaking time of the carriers in quantum well and to saturation of the phase breaking time at low temperature.

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Role of doped layers in dephasing of 2D electrons in quantum well structures

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