Temperature dependence of the ohmic conductivity and activation energy of Pb1+y(Zr0.3Ti0.7)O3 thin films

B. M. McGregor; Department of Engineering; D. P. Chu; Japan); M. E. Welland (Department of Engineering; P. Migliorato (Epson Cambridge Laboratory; T. Shimoda (Seiko Epson Corporation; UK) C. Durkan; UK) K. Hasegawa; University of Cambridge

arxiv: cond-mat/0106067 · v1 · submitted 2001-06-05 · ❄️ cond-mat.mtrl-sci

Temperature dependence of the ohmic conductivity and activation energy of Pb1+y(Zr0.3Ti0.7)O3 thin films

D. P. Chu , B. M. McGregor , P. Migliorato (Epson Cambridge Laboratory , Department of Engineering , University of Cambridge , UK) C. Durkan , M. E. Welland (Department of Engineering , UK) K. Hasegawa

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T. Shimoda (Seiko Epson Corporation Japan)

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classification ❄️ cond-mat.mtrl-sci

keywords temperatureactivationconductivitycurrentdependenceexcessfilmsohmic

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The ohmic conductivity of the sol-gel derived Pb1+y(Zr0.3Ti0.7)O3 thin films (with the excess lead y=0.0 to 0.4) are investigated using low frequency small signal alternate current (AC) and direct current (DC) methods. Its temperature dependence shows two activation energies of 0.26 and 0.12 eV depending on temperature range and excess Pb levels. The former is associated with Pb3+ acceptor centers, while the latter could be due to a different defect level yet to be identified.

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Temperature dependence of the ohmic conductivity and activation energy of Pb1+y(Zr0.3Ti0.7)O3 thin films

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