Pith. sign in

REVIEW

Evidence for a Quantum Hall Insulator in an InGaAs/InP Heterostructure

Not yet reviewed by Pith; the record is open.

Re-run · record.json Download PDF Read on arXiv ↗

This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.

SPECIMEN: schema-true, not a live event

T0 review · schema-true

One-sentence machine reading of the paper's core claim.

pith:XXXXXXXX · record.json · timestamp

arxiv cond-mat/0106375 v1 pith:5J6ME24B submitted 2001-06-19 cond-mat.mes-hall cond-mat.str-el

D.T.N. de Lang , L. A. Ponomarenko , A. de Visser , C. Possanzini , S.M. Olsthoorn , A.M.M. Pruisken This is my paper · ORCID
classification cond-mat.mes-hallcond-mat.str-el
keywords transitioncriticalhallheterostructureingaasquantumvalueaccurate
verification ladder T0 review T1 audit T2 compute T3 formal
0 comments
read the original abstract

We study the quantum critical behavior of the plateau-insulator (PI) transition in a low mobility InGaAs/InP heterostructure. By reversing the direction of the magnetic field (B) we find an averaged Hall resistance \rho_xy which remains quantized at the plateau value h/e^2 throughout the PI transition. We extract a critical exponent \kappa'= 0.57 +/- 0.02 for the PI transition which is slightly different from (and possibly more accurate than) the established value 0.42 +/- 0.04 as previously obtained from the plateau-plateau (PP) transitions.

Discussion (0). Continue with ORCID to comment.

Pith tools