Growth and Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As

We have studied growth and properties of quaternary alloy magnetic semiconductor (InGaMn)As grown both on GaAs substrates and on InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). (InGaMn)As thin films were ferromagnetic below ~30 K, exhibiting strong magneto-optical effect. The lattice constant of [(InyGa1-y)1-xMnx]As, whose Mn concentration x is below 4%, is slightly smaller than that of InyGa1-yAs with the same In/Ga content ratio. We have also obtained very smooth surface morphology of nearly lattice matched (InGaMn)As thin films grown on InP substrates, which is important for application to thin-film type magneto-optical devices integrated with III-V opto-electronics.