Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode

E. Goovaerts; G. Borghs; J. Das; J. De Boeck; M. Nijboer; P. Van Dorpe; V.F. Motsnyi; V.I. Safarov; W. Van Roy

arxiv: cond-mat/0208325 · v2 · submitted 2002-08-16 · ❄️ cond-mat.mtrl-sci

Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode

P. Van Dorpe , V.F. Motsnyi , M. Nijboer , E. Goovaerts , V.I. Safarov , J. Das , W. Van Roy , G. Borghs

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J. De Boeck

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classification ❄️ cond-mat.mtrl-sci

keywords spinroomtemperaturealoxefficienthighlyinjectiontunnel

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We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations of at least 24% at 80K and 12% at room temperature.

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Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode

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