On the Origin of Schottky Barriers in GaAs(110):Au contacts

L. Winking; M. Wenderoth; N. Quaas; R. G. Ulbrich; T. C. G. Reusch

arxiv: cond-mat/0302551 · v2 · submitted 2003-02-26 · ❄️ cond-mat.mtrl-sci

On the Origin of Schottky Barriers in GaAs(110):Au contacts

T. C. G. Reusch , M. Wenderoth , L. Winking , N. Quaas , R. G. Ulbrich This is my paper

classification ❄️ cond-mat.mtrl-sci

keywords contactsgaasschottkybarriersbeenchargeconfigurationcross-sectional

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Scanning Tunnelling Spectroscopy of GaAs(110):Au Schottky contacts in cross-sectional configuration has been used to investigate the in-depth properties of the space charge layer as well as the interface region with nanometer resolution.

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On the Origin of Schottky Barriers in GaAs(110):Au contacts

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