In(1-x)Mn(x)Sb - a new narrow gap ferromagnetic semiconductor

T. Wojtowicz , G. Cywinski , W.L. Lim , X. Liu , M. Dobrowolska , J. K. Furdyna , K. M. Yu , W. Walukiewicz

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G.B. Kim M. Cheon X. Chen S.M. Wang H. Luo

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classification ❄️ cond-mat.mtrl-sci

keywords ferromagneticsemiconductoragreealloyanomalousbeamcarrier-inducedcdte

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A narrow-gap ferromagnetic In(1-x)Mn(x)Sb semiconductor alloy was successfully grown by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In(1-x)Mn(x)Sb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures T_C ranging up to 8.5 K. The observed values of T_C agree well with the existing models of carrier-induced ferromagnetism.

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In(1-x)Mn(x)Sb - a new narrow gap ferromagnetic semiconductor

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