Electrical properties of ferroelectric YMnO3 films deposited on n-type Si (111) substrates

YMnO3 thin films were grown on n - type Si substrate by nebulized spray pyrolysis in Metal - Ferroelectric - Semiconductor (MFS) configuration. The C-V characteristics of the film in MFS structure exhibit hysteretic behavior consistent with the polarization charge switching direction, with the memory window decreasing with increase in temperature. The density of interface states decreases with the increase in the annealing temperature. Mapping of the silicon energy band gap with the interface states has been carried out. The leakage current measured in the accumulation region, is lower in well-crystallized thin films and obeys a space- charge limited conduction mechanism. The calculated activation energy from the dc leakage current characteristics of Arhennius plot reveals that the activation energy correspond to the oxygen vacancy motion