Binding energies of hydrogen-like impurities in a semiconductor in intense terahertz laser fields
classification
❄️ cond-mat.mtrl-sci
keywords
bindingenergyhydrogen-likeimpuritiesintenselaserradiationstates
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A detailed theoretical study is presented for the influence of linearly polarised intense terahertz (THz) laser radiation on energy states of hydrogen-like impurities in semiconductors. The dependence of the binding energy for 1s and 2p states on intensity and frequency of the THz radiation has been examined.
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