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Processing Issues in Top-Down Approaches to Quantum Computer Development in Silicon

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arxiv cond-mat/0310195 v1 pith:5DKF3B77 submitted 2003-10-09 cond-mat

S.-J. Park , A. Persaud , J. A. Liddle , J. Nilsson , J. Bokor , D. H. Schneider , I. Rangelow , T. Schenkel This is my paper
classification cond-mat
keywords issuesprocessingsiliconsingleactivationcontroldevelopmentdiscuss
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We describe critical processing issues in our development of single atom devices for solid-state quantum information processing. Integration of single 31P atoms with control gates and single electron transistor (SET) readout structures is addressed in a silicon-based approach. Results on electrical activation of low energy (15 keV) P implants in silicon show a strong dose effect on the electrical activation fractions. We identify dopant segregation to the SiO2/Si interface during rapid thermal annealing as a dopant loss channel and discuss measures of minimizing it. Silicon nanowire SET pairs with nanowire width of 10 to 20 nm are formed by electron beam lithography in SOI. We present first results from Coulomb blockade experiments and discuss issues of control gate integration for sub-40nm gate pitch levels.

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