Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies

B.A. Orlowski; B.J. Kowalski; E. Lusakowska; F. Mirabella; I.A. Kowalik; I. Grzegory; J. Ghijsen; J. Kanski; J. Sadowski; M. Leszczynski

arxiv: cond-mat/0408090 · v1 · submitted 2004-08-04 · ❄️ cond-mat.mtrl-sci

Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies

B.J. Kowalski , I.A. Kowalik , R.J. Iwanowski , J. Sadowski , J. Kanski , B.A. Orlowski , J. Ghijsen , F. Mirabella

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E. Lusakowska P. Perlin S. Porowski I. Grzegory M. Leszczynski

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classification ❄️ cond-mat.mtrl-sci

keywords surfaceinvestigatedbeenelectronicmeansmocvd-grownphotoemissionstructure

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The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, which can be ascribed to the presence of In in the layer, has been revealed. A clean (0001)-(1x1) surface was prepared by argon ion sputtering and annealing. Stability of chemical composition of the investigated surface subjected to similar ion etching was proven by means of X-ray photoemission spectroscopy.

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Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies

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