MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure

B.J. Kowalski; E. Lusakowska; I.A. Kowalik; I. Grzegory; J. Sadowski; M. Sawicki; R.J. Iwanowski; S. Porowski

arxiv: cond-mat/0408111 · v2 · submitted 2004-08-05 · ❄️ cond-mat.mtrl-sci

MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure

B.J. Kowalski , I.A. Kowalik , R.J. Iwanowski , E. Lusakowska , M. Sawicki , J. Sadowski , I. Grzegory , S. Porowski This is my paper

classification ❄️ cond-mat.mtrl-sci

keywords mnaselectroniclayerstructurebandbeenchangesdensity

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Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy. Density of the valence band states of MnAs and its changes due to increase of the layer thickness were revealed.

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MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure

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