Energy-resolved electron-spin dynamics at surfaces of p-doped GaAs

(2)II. Physikalisches Institut; B. Beschoten (2); Germany; Germany); H. C. Schneider (1); J. Lange (1); J.-P. Wuestenberg (1); Kaiserslautern University; K. Hiebbner (1); L. Guo (1)

arxiv: cond-mat/0508601 · v1 · pith:EJEBOPUNnew · submitted 2005-08-25 · ❄️ cond-mat.mtrl-sci

Energy-resolved electron-spin dynamics at surfaces of p-doped GaAs

H. C. Schneider (1) , J.-P. Wuestenberg (1) , O. Andreyev (1) , K. Hiebbner (1) , L. Guo (1) , J. Lange (1) , L. Schreiber (2) , B. Beschoten (2)

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M. Bauer (1) M. Aeschlimann (1) ((1) Physics Department Kaiserslautern University Germany (2)II. Physikalisches Institut RWTH Aachen Germany)

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classification ❄️ cond-mat.mtrl-sci

keywords gaastimebulkcalculationselectron-spinmeasurementsobtainedp-doped

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Electron-spin relaxation at different surfaces of p-doped GaAs is investigated by means of spin, time and energy resolved 2-photon photoemission. These results are contrasted with bulk results obtained by time-resolved Faraday rotation measurements as well as calculations of the Bir-Aronov-Pikus spin-flip mechanism. Due to the reduced hole density in the band bending region at the (100) surface the spin-relaxation time increases over two orders of magnitude towards lower energies. At the flat-band (011) surface a constant spin relaxation time in agreement with our measurements and calculations for bulk GaAs is obtained.

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Energy-resolved electron-spin dynamics at surfaces of p-doped GaAs

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