arxiv: cond-mat/0512412 · v2 · submitted 2005-12-16 · ❄️ cond-mat.mes-hall

Conductance quantization in etched Si/SiGe quantum point contacts

G. Scappucci (1) , L. Di Gaspare (1) , E. Giovine (2) , A. Notargiacomo (2) , R. Leoni (2) , F. Evangelisti (1 , 2) ((1) Dipartimento di Fisica "E. Amaldi" , Universita' Roma Tre

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Roma Italy (2) Istituto di Fotonica e Nanotecnologie IFN-CNR Italy)

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keywords conductancecontactspointquantumquantizationsigeadiabaticapproximately

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We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately 1e2/h. Non-linear conductance measurements were performed depleting the quantum point contacts at fixed mode-energy separation. We report evidences of the formation of a half 1e2/h plateau, supporting the speculation that adiabatic transmission occurs through 1D modes with complete removal of valley and spin degeneracies.

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Conductance quantization in etched Si/SiGe quantum point contacts

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