Maximum Metallic Conductivity in Si-MOS Structures
classification
❄️ cond-mat.str-el
cond-mat.mes-hall
keywords
conductivitymaximumsi-mosstructuresvaluedecreasesdensitydependent
read the original abstract
We found that the conductivity of the two-dimensional electron system in Si-MOS structures is limited to a maximum value, G_{max}, as either density increases or temperature decreases. This value G_{max} is weakly disorder dependent and ranging from 100 to 140 e^2/h for samples whose mobilities differ by a factor of 4.
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