Universal Behaviour of Metal-Insulator Transitions in the p-SiGe System
classification
❄️ cond-mat.mes-hall
cond-mat.str-el
keywords
transitionmetal-insulatorp-sigebehaviourclosedemonstrateddensityfactor
read the original abstract
Magnetoresistance measurements are presented for a strained p-SiGe quantum well sample where the density is varied through the B=0 metal-insulator transition. The close relationship between this transition, the high field Hall insulator transition and the filling factor $\nu$=3/2 insulating state is demonstrated.
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