Memory Effect in the Photoinduced Femtosecond Rotation of Magnetization in the Ferromagnetic Semiconductor GaMnAs

(1) I. Cotoros; (1) X. Liu; (2) I. E. Perakis; (2) J. Chovan; (3); (3) J. K. Furdyna; Department of Physics; D. S. Chemla (1) ((1) Materials Sciences Division; E.O. Lawrence Berkeley National Laboratory; Foundation for Research

arxiv: 0804.3456 · v1 · submitted 2008-04-22 · ❄️ cond-mat.mtrl-sci · cond-mat.str-el

Memory Effect in the Photoinduced Femtosecond Rotation of Magnetization in the Ferromagnetic Semiconductor GaMnAs

J. Wang , (1) I. Cotoros , (1) X. Liu , (2) J. Chovan , (3) J. K. Furdyna , (2) I. E. Perakis , (3) , D. S. Chemla (1) ((1) Materials Sciences Division

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E.O. Lawrence Berkeley National Laboratory Department of Physics University of California at Berkeley (2) Department of Physics University of Notre Dame (3)Institute of Electronic Structure Laser Foundation for Research Technology-Hellas University of Crete Heraklion Greece.)

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classification ❄️ cond-mat.mtrl-sci cond-mat.str-el

keywords femtosecondmagnetizationrotationferromagneticgamnasmemoryphotoinducedregime

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We report a femtosecond response in photoinduced magnetization rotation in the ferromagnetic semiconductor GaMnAs, which allows for detection of a four-state magnetic memory at the femtosecond time scale. The temporal profile of this cooperative magnetization rotation exhibits a discontinuity that reveals two distinct temporal regimes, marked by the transition from a highly non-equilibrium, carrier-mediated regime within the first 200 fs, to a thermal, lattice-heating picosecond regime.

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Memory Effect in the Photoinduced Femtosecond Rotation of Magnetization in the Ferromagnetic Semiconductor GaMnAs

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