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Optically induced transport properties of freely suspended semiconductor submicron channels

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arxiv 0805.2230 v1 pith:LQ7HNHH2 submitted 2008-05-15 cond-mat.mes-hall cond-mat.other

C. Rossler , K.-D. Hof , S. Manus , S. Ludwig , J. P. Kotthaus , J. Simon , A. W. Holleitner , D. Schuh
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W. Wegscheider
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classification cond-mat.mes-hallcond-mat.other
keywords channelsdevicesfreelyinducedopticallysubmicronsuspendedtransport
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We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds.

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