Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature

Bartholomaeus N. Szafranek; Daniel Neumaier; Daniel Schall; Heinrich Kurz; Martin Otto

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Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature

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arxiv 1001.5213 v1 pith:YK3ELI2J submitted 2010-01-28 cond-mat.mes-hall

Bartholomaeus N. Szafranek , Daniel Schall , Martin Otto , Daniel Neumaier , Heinrich Kurz This is my paper

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We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge neutrality point as a function of the electric field applied perpendicular to the graphene surface, we show that a band gap in the density of states opens, reaching an effective value of ~sim50 meV. This demonstrates the potential of bilayer graphene as FET channel material in a conventional CMOS environment.

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