Charge transfer between epitaxial graphene and silicon carbide

Alexander Tzalenchuk; Sergey Kopylov; Sergey Kubatkin; Vladimir I. Fal'ko

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Charge transfer between epitaxial graphene and silicon carbide

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arxiv 1007.4340 v1 pith:5LXYJWMQ submitted 2010-07-25 cond-mat.mtrl-sci

Sergey Kopylov , Alexander Tzalenchuk , Sergey Kubatkin , Vladimir I. Fal'ko This is my paper

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We analyse doping of graphene grown on SiC in two models which differ by the source of charge transfered to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyse the responsivity of graphene to the density variation by means of electrostatic gates.

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